TLP109(TPR,E)

TLP109(IGM) Photocouplers Infrared LED & Photo IC TLP109(IGM) 1. Applications • Intelligent Power Module Signal Isolation • High-Speed Digital Interfacing for Instrumentation and Control Devices • Industrial Inverters 2. General The Toshiba TLP109(IGM) mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP109(IGM) consists of an infrared LED optically coupled to a high-speed photodiode-transistor chip. The TLP109(IGM) is housed in the SO6 package and guarantees a creepage distance of ≥5.0 mm, a clearance of ≥5.0 mm and an insulation thickness of ≥0.4mm. Therefore, the TLP109(IGM) meets the reinforced insulation class requirements of international safety standards. The TLP109(IGM) guarantees minimum and maximum of propagation delay time, switching time dispersion, and high common mode transient immunity. Therefore TLP109 (IGM) is suitable for isolation interface between IPM(Intelligent Power Module) and control IC circuits in motor control application. 3. Features (1) Isolation voltage: 3750 Vrms (min) (2) Common-mode transient immunity: 10 kV/µs (min) (3) Propagation delay time tpHL/tpLH = 0.1 µs (min) @VCM = 1500 Vp-p = 0.8 µs (max) @ IF = 10 mA, VCC = 15 V, RL = 20 kΩ, Ta = 25  (4) Pulse width distortion: 0.7 µs (max) (|tpHL-tpLH|) (5) TTL compatible (6) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). Start of commercial production ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 2008-07 2019-09-20 Rev.2.0 TLP109(IGM) 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: VO (Output) 6: VCC 11-4L1S 5. Internal Circuit 6. Principle of Operation 6.1. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 ©2017-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-09-20 Rev.2.0 TLP109(IGM) 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating (Ta ≥ 95 ) Note Rating Unit IF 20 mA ∆IF/∆Ta -0.36 mA/ Input forward current (pulsed) IFP (Note 1) 40 mA Peak transient input forward current IFPT (Note 2) 1 A Input reverse voltage VR 5 V Input power dissipation PD 40 mW ∆PD/∆Ta -0.72 mW/ Tj 125  Input power dissipation derating (Ta ≥ 95 ) Junction temperature Detector Output current Output current derating (Ta ≥ 95 ) IO 8 mA ∆IO/∆Ta -0.3 mA/ Peak output current IOP 16 mA Output voltage VO -0.5 to 20 V Supply voltage VCC -0.5 to 30 V Output power dissipation PO 100 mW ∆PO/∆Ta -1.8 mW/ Tj 125  Topr -55 to 125 Tstg -55 to 125 Output power dissipation derating (Ta ≥ 95 ) Junction temperature Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage (10 s) Tsol (AC, 60 s, R.H. ≤ 60 %) BVS 260 (Note 3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 % Note 2: Pulse width (PW) ≤ 1 µs, 300 pps Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Input forward voltage Input forward voltage temperature coefficient Symbol Note Test Circuit Test Condition Min Typ. Max Unit VF IF = 16 mA 1.5 1.64 1.85 V ∆VF/∆Ta IF = 16 mA  -1.8  mV/ Input reverse current IR VR = 3 V   10 µA Input capacitance Ct V = 0 V, f = 1 MHz  60  pF High-level output current IOH IF = 0 mA, VO = VCC = 5.5 V  3 500 nA IF = 0 mA, VO = 20 V, VCC = 30 V   5 µA IF = 0 mA, VO = 20 V, VCC = 30 V, Ta = 100    50 High-level supply current ICCH IF = 0 mA, VCC = 30 V  0.01 1 µA Supply voltage VCC ICC = 0.01 mA 30   V Output voltage VO IO = 0.5 mA 20   V ©2017-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-09-20 Rev.2.0 TLP109(IGM) 9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Current transfer ratio IO/IF Low-level output voltage VOL Test Condition Min Typ. Max Unit IF = 10 mA, VCC = 4.5 V, VO = 0.4 V 25 35 75 % IF = 10 mA, VCC = 4.5 V, VO = 0.4 V, Ta = -25 to 100  15   IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA   0.4 V Min Typ. Max Unit  0.8  pF 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Total capacitance (input to output) Isolation resistance Isolation voltage Note Test Conditions CS (Note 1) VS = 0 V, f = 1 MHz RS (Note 1) VS = 500 V, R.H. ≤ 60 % 1012 1014  Ω (Note 1) AC, 60 s 3750   Vrms BVS Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 11. Switching Characteristics (Unless otherwise specified, Ta = 25 , VCC = 15 V) Characteristics Symbol Propagation delay time (H/L) tpHL Propagation delay time (L/H) Pulse width distortion Note tpLH |tpHL-tpLH| Test Circuit Test Condition Min Typ. Max Unit Fig.12.1.1 IF = 10 mA, RL = 20 kΩ 0.1 0.45 0.8 µs IF = 10 mA, RL = 20 kΩ, Ta = 0 to 85  0.1 0.45 0.9 IF = 10 mA, RL = 20 kΩ, Ta = -25 to 100  0.1 0.45 1.0 Fig.12.1.1 IF = 10 mA, RL = 20 kΩ 0.1 0.45 0.8 IF = 10 mA, RL = 20 kΩ, Ta = 0 to 85  0.1 0.45 0.9 IF = 10 mA, RL = 20 kΩ, Ta = -25 to 100  0.1 0.45 1.0 Fig.12.1.1 IF = 10 mA, RL = 20 kΩ  0.15 0.7 IF = 10 mA, RL = 20 kΩ, Ta = 0 to 85   0.25 0.8 IF = 10 mA, RL = 20 kΩ, Ta = -25 to 100   0.25 0.9 µs µs High-level common-mode transient immunity CMH (Note 1) Fig.12.1.2 VCM = 1500 Vp-p, IF = 0 mA, RL = 20 kΩ 10 15  kV/µs Low-level common-mode transient immunity CML (Note 2) -10 -15  kV/µs VCM = 1500 Vp-p, IF = 10 mA, RL = 20 kΩ Note 1: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 4 V). Note 2: CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 1 V). ©2017-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-09-20 Rev.2.0 TLP109(IGM) 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 Switching Time Test Circuit and Waveform Fig. 12.1.2 Common-Mode Transient Immunity Test Circuit and Waveform ©2017-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-09-20 Rev.2.0 TLP109(IGM) 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2017-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-09-20 Rev.2.0 TLP109(IGM) 14. Land Pattern Dimensions (for reference only) Unit: mm 15. Marking ©2017-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-09-20 Rev.2.0 TLP109(IGM) 16. EN 60747-5-5 Option (V4) Specification • Part number: TLP109 (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (V4) of EN 60747. Example: TLP109(V4IGMTL,E V4: EN 60747 option IGM: IGM spec TL: Tape type E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP109(V4IGMTL,E → TLP109 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 16.1 EN 60747 Isolation Characteristics ©2017-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-09-20 Rev.2.0 TLP109(IGM) Fig. 16.2 Insulation Related Specifications (Note) Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 16.3 Marking on Packing Fig. 16.4 Marking Example (Note) Note: The above marking is applied to the photocouplers that have been qualified according to option (V4) of EN 60747. ©2017-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-09-20 Rev.2.0 TLP109(IGM) Fig. 16.5 Measurement Procedure ©2017-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-09-20 Rev.2.0 TLP109(IGM) 17. Ordering Information When placing an order, please specify the part number, tape type and quantity as shown in the following example. Example) TLP109(IGM-TPL,E 3000 pcs Part number: TLP109 IGM spec: IGM Tape type: TPL [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 3000): 3000 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2017-2019 Toshiba Electronic Devices & Storage Corporation 11 2019-09-20 Rev.2.0 TLP109(IGM) Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4L1S ©2017-2019 Toshiba Electronic Devices & Storage Corporation 12 2019-09-20 Rev.2.0 TLP109(IGM) RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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