TLP124(BV-TPR,F

TLP124 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP124 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication Unit: mm The TOSHIBA mini flat coupler TLP124 is a small outline coupler, suitable for surface mount assembly. TLP124 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. • Collector−emitter voltage: 80 V (min) • Current transfer ratio: 100% (min) Rank BV: 200% (min) • Isolation voltage: 3750Vrms (min) • UL recognized: UL1577, file No. E67349 TOSHIBA 11−4C1 Weight: 0.09g (typ.) Pin Configurations (top view) 1 6 3 4 1 : Anode 3 : Cathode 4 : Emitter 6 : Collector Start of commercial production 1988/04 1 2014-09-08 TLP124 Current Transfer Ratio Current Transfer Ratio (min.) Classification Ta = −25~75°C Ta = 25°C Marking of Classification IF = 1mA VCE = 0.5V IF = 0.5mA VCE = 1.5V IF = 1mA VCE = 0.5V Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, Blank (Note) Application type name for certification test, please use standard product type name, i. e. TLP124 (BV): TLP124 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF / °C −0.7 (Ta ≥ 53°C) mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW ∆PC / °C −1.5 mA / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C −2.0 mW / °C BVS 3750 Vrms Forward current Detector LED Forward current derating Power dissipation derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together. 2 2014-09-08 TLP124 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 48 V Forward current IF ― 1.6 20 mA Collector current IC ― 1 10 mA Topr −25 ― 75 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance Detector Symbol V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 48 V ― 10 100 nA VCE = 48 V, Ta = 85°C ― 2 50 μA V = 0, f = 1 MHz ― 12 ― pF MIn Typ. Max Unit 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― ― ― 0.4 ― 0.2 ― ― ― 0.4 ― ― 10 μA Min Typ. Max Unit 50 ― ― % 100 ― ― % ― 50 ― % ― 100 ― % Collector dark current Capacitance collector to emitter CT ID CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low input CTR Symbol IC / IF IC / IF (low) Test Condition IF = 1mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV IC = 0.5 mA, IF = 1 mA Collector−emitter saturation voltage VCE (sat) IC = 1 mA, IF = 1 mA Rank BV Off−state collector current IC(off) VF = 0.7V, VCE = 48 V % % V Coupled Electrical Characteristics (Ta = −25~75°C) Characteristic Current transfer ratio Low input CTR Symbol IC / IF IC / IF (low) Test Condition IF = 1mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV 3 2014-09-08 TLP124 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% BVS Typ. Max Unit ― 0.8 ― pF ― Ω 5×10 AC, 1 minute Isolation voltage Min 10 10 14 3750 — ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min Typ. Max Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time tON Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 4.7 kΩ VCC = 5 V, IF = 1.6 mA (Fig.1) μs μs Fig. 1 Switching time test circuit IF IF VCC ts RL VCE VCE VCC 4.5V 0.5V tON 4 tOFF 2014-09-08 TLP124 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 60 100 80 Ambient temperature Ta 160 120 80 40 0 −20 120 0 40 20 Ambient temperature (°C) Pulse width ≦ 100μs (mA) 500 IF 300 100 50 30 10 3 10−3 10−2 3 10−1 3 Duty cycle ratio 100 3 DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 ΔVF / ΔTa – IF 1.2 1.6 1.4 VF 1.8 (V) IFP – VFP −3.2 −2.8 (mA) −2.4 IFP 1000 −2.0 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) (°C) Ta = 25°C Forward voltage −1.6 −1.2 −0.8 −0.4 0.1 Ta 120 50 Ta = 25°C 1000 100 80 IF – V F 100 Forward current Pulse forward current IFP (mA) IFP – DR 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width ≦ 10μs 5 Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 Pulse forward voltage 5 2.2 VFP 2.6 3.0 (V) 2014-09-08 TLP124 IC – VCE 4 IC – VCE 4 Ta = 25°C (mA) Collector current Collector current 0.8mA 2 0.6mA 0.5mA 1 Ta = 25°C IF = 1.0mA 3 IC 3 IC (mA) IF = 1.0mA 0.4mA 0.8mA 2 0.6mA 0.5mA 1 0.4mA 0.2mA 0 0 2 6 4 0.2mA 8 Collector–emitter voltage VCE 0 0 10 0.2 0.6 0.4 Collector–emitter voltage (V) IC – IF 0.8 1.0 (V) VCE ICEO – Ta 101 50 10 100 5 (μA) 3 Sample A VCE = 48V ICEO 1 0.5 Ta = 25°C 0.3 Sample B VCE = 5V Collector dark current Collector current IC (mA) 30 VCE = 1.5V 0.1 VCE = 0.5V 0.05 0.03 0.1 0.3 0.5 1 Forward current 3 IF 5 10 (mA) 1000 10V 10−1 5V 10−2 10−3 10−4 0 IC / IF – IF 24V 20 40 60 Ambient temperature Ta = 25°C 80 Ta 100 120 (°C) Current transfer ratio IC / IF (%) 500 SamplE A 300 Sample B 100 VCE = 5V VCE = 1.5V VCE = 0.5V 50 30 0.1 0.3 0.5 1 Forward current 3 5 10 IF (mA) 6 2014-09-08 TLP124 IC – Ta VCE(sat) – Ta 30 0.14 VCE = 1.5V VCE = 0.5V IF = 2mA 10 (mA) 0.10 IC 0.08 Collector current Collector–emitter saturation voltage VCE(sat) (mV) 0.12 0.06 0.04 IF = 1mA Ic = 0.5mA 0.02 0 −40 −20 20 0 40 80 60 Ambient temperature Ta 100 5 1mA 3 0.5mA 1 0.5 0.3 0.2mA 0.1 (℃) 0.05 -20 0 20 40 Ambient temperature 60 Ta 80 100 (℃) Switching Time – RL 5000 3000 Ta = 25°C IF = 1.6mA VCC = 5V tOFF Switching time (μs) 1000 500 300 ts 100 50 30 tON 10 5 1 3 5 10 Load resistance 30 RL 50 100 (kΩ) 7 2014-09-08 TLP124 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 8 2014-09-08