TLP124
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP124
Office Machine Programmable Controllers AC / DC−Input Module Telecommunication
The TOSHIBA mini flat coupler TLP124 is a small outline coupler, suitable for surface mount assembly. TLP124 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. • • • • Collector−emitter voltage: 80 V min. Current transfer ratio: 100% min. Rank BV: 200% min. Isolation voltage: 3750Vrms min. UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.09g 11−4C1 Unit in mm
Pin Configurations (top view)
1 3 1 : Anode 3 : Cathode 4 : Emitter 6 : Collector 6 4
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TLP124
Current Transfer Ratio
Classification Rank BV Standard Current Transfer Ratio (min.) Ta = 25°C Ta = −25~75°C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V 200% 100% 100% 50% 100% 50% Marking Of Classification BV BV, Blank
(Note) Application type name for certification test, please use standard product type name, i. e. TLP124 (BV): TLP124
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Forward current Forward current derating Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Detector Peak collector current (10ms pulse, 100pps) Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 1) LED Symbol IF ΔIF / °C IFP VR Tj VCEO VECO IC ICP PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating 50 −0.7 (Ta ≥ 53°C) 1 5 125 80 7 50 100 150 −1.5 125 −55~125 −55~100 260 200 −2.0 3750 Unit mA mA / °C A V °C V V mA mA mW mA / °C °C °C °C °C mW mW / °C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
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Recommended Operating Conditions
Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 1.6 1 ― Max. 48 20 10 75 Unit V mA mA °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage LED Reverse Current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance collector to emitter Symbol VF IR CT V(BR) CEO V(BR) ECO ID CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 48 V VCE = 48 V, Ta = 85°C V = 0, f = 1 MHz Min. 1.0 ― ― 80 7 ― ― ― Typ. 1.15 ― 30 ― ― 10 2 12 Max. 1.3 10 ― ― ― 100 50 ― Unit V μA pF V V nA μA pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV IC = 0.5 mA, IF = 1 mA VCE (sat) IC = 1 mA, IF = 1 mA Rank BV VF = 0.7V, VCE = 48 V MIn. 100 200 50 100 ― ― ― ― Typ. ― ― ― ― ― 0.2 ― ― Max. 1200 1200 ― ― 0.4 ― 0.4 10 μA V Unit %
Low input CTR
IC / IF (low)
%
Collector−emitter saturation voltage Off−state collector current
IC(off)
Coupled Electrical Characteristics (Ta = −25~75°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV Min. 50 100 ― ― Typ. ― ― 50 100 Max. ― ― ― ― Unit % % % %
Low input CTR
IC / IF (low)
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Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 s, in oil DC, 1 minute, in oil Min. ― 5×10
10
Typ. 0.8 10
14
Max. ― ― ― ― ―
Unit pF Ω Vrms Vdc
3750 ― ―
— 10000 10000
Switching Characteristics (Ta = 25°C)
Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf tON tOFF tON ts tOFF RL = 4.7 kΩ VCC = 5 V, IF = 1.6 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 8 8 10 8 10 50 300 Max. ― ― ― ― ― ― ― μs μs Unit
Fig. 1 Switching time test circuit
IF VCC RL VCE VCE IF ts VCC 4.5V 0.5V tON tOFF
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TLP124
IF – Ta
100 200
PC – Ta
Allowable forward current IF (mA)
Allowable collector power dissipation PC (mW)
80
160
60
120
40
80
20
40
0 −20
0
20
40
60
80
100
120
0 −20
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
IFP – DR IFP (mA)
3000 Pulse width ≦ 100μs Ta = 25°C 100 50 Ta = 25°C
IF – V F
500
(mA) IF Forward current
10−3 3 10−2 3 10−1 3 100
1000
30
Pulse forward current
300
10 5 3
100 50 30
1 0.5 0.3
10 3
Duty cycle ratio
DR
0.1 0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage
VF
(V)
ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C)
−3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 1000
IFP – VFP (mA) IFP Pulse forward current
500 300
100 50 30
10 5 3 1 0.6 Pulse width ≦ 10μs Repetitive Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 2.2 2.6 3.0
0.3 0.5
1
3
5
10
30
50
Forward current
IF (mA)
Pulse forward voltage
VFP
(V)
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TLP124
IC – VCE
4 Ta = 25°C 4 Ta = 25°C IF = 1.0mA
IC – VCE
(mA)
(mA)
IF = 1.0mA 3
3 0.8mA 2 0.6mA 0.5mA 1 0.4mA 0.2mA 0 0 2 4 6 8 10
IC
IC
Collector current
Collector current
0.8mA 2 0.6mA 1 0.5mA 0.4mA 0.2mA 0 0 0.2 0.4 0.6 0.8 1.0
Collector–emitter voltage
VCE (V)
Collector–emitter voltage
VCE (V)
I C – IF
50 30 101
ICEO – Ta
IC (mA)
10 5 Sample A 1 0.5 0.3 0.1 0.05 0.03 0.1 Ta = 25°C Sample B VCE = 5V VCE = 1.5V VCE = 0.5V 0.3 0.5 1 3 5 10 10
0
Collector current
(μA)
3
VCE = 48V 10−1
24V 10V 5V
Collector dark current
ICEO (mA)
10−2
Forward current
IF
10−3
IC / IF – IF
1000 Ta = 25°C
10−4 0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
500
Current transfer ratio IC / IF (%)
SamplE A 300
Sample B 100 VCE = 5V VCE = 1.5V 50 30 0.1 VCE = 0.5V
0.3
0.5
1
3
5
10
Forward current
IF (mA)
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VCE(sat) – Ta
0.14 0.12 30
IC – Ta
VCE = 1.5V VCE = 0.5V 10 IF = 2mA
Collector–emitter saturation voltage VCE(sat) (mV)
(mA)
0.10
5 3
0.06
Collector current
IC
0.08
1mA
1 0.5 0.3
0.5mA
0.04
IF = 1mA Ic = 0.5mA
0.02
0.2mA
0 −40
−20
0
20
40
60
80
100
0.1 0.05 -20
Ambient temperature
Ta
(℃ )
0
20
40
60
80
100
Ambient temperature Switching Time – RL
5000 3000 Ta = 25°C IF = 1.6mA VCC = 5V
Ta
(℃)
1000
tOFF
(μs) Switching time
500 300 ts 100
50 30
10
tON
5 1
3
5
10
30
50
100
Load resistance
RL
(kΩ)
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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