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TLP127TPRUF

TLP127TPRUF

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    6-SMD(4引线),鸥形翼

  • 描述:

    OPTOISOLTR 2.5KV DARLNG 6-MFSOP

  • 数据手册
  • 价格&库存
TLP127TPRUF 数据手册
TLP127 TOSHIBA Photocoupler IRED & Photo-Transistor TLP127 Programmable Controllers DC-Output Module Telecommunication Unit: mm The TOSHIBA mini-flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of an infrared emitting diode, optically coupled to a Darlington photo transistor with an integral base-emitter resistor. • Collector-emitter voltage : 300 V (min) • Current transfer ratio : 1000 % (min) • Isolation voltage : 2500 Vrms (min) • UL-recognized : UL 1577, File No. E67349 • cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved : EN 60747-5-5 (Note 1) TOSHIBA 11-4C1 Weight: 0.09 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option (V4). Pin Configurations (top view) 1 6 3 4 1: ANODE 3: CATHODE 4: EMITTER 6: COLLECTOR Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 1988-04 2019-05-27 TLP127 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF/°C -0.7 mA/°C Pulse forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 100 mW ΔPD/°C -1.39 mW/°C Forward current Forward current derating LED (Ta ≥ 53°C) Diode power dissipation derating (Ta ≥ 53°C) Detector Junction temperature Tj 125 °C Collector-emitter voltage VCEO 300 V Emitter-collector voltage VECO 0.3 V Collector current IC 150 mA Collector power dissipation PC 150 mW ΔPC/°C -1.5 mW/°C Collector power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1) Tj 125 °C Tstg -55 to 125 °C Topr -55 to 100 °C Tsol 260 °C PT 200 mW ΔPT/°C -2.0 mW/°C BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― ― 200 V Forward current IF ― 16 25 mA Collector current IC ― ― 120 mA Topr -25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-27 TLP127 Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF IC = 0.1 mA 300 ― ― V Collector-emitter breakdown voltage V(BR)CEO Emitter-collector breakdown voltage V(BR)ECO Collector dark current ICEO Capacitance collector to emitter CCE IE = 0.1 mA 0.3 ― ― V VCE = 200 V ― 10 200 nA VCE = 200 V, Ta = 85 °C ― ― 20 μA V = 0 V, f = 1 MHz ― 12 ― pF MIn Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition IC/IF IF = 1 mA, VCE = 1 V 1000 4000 ― % Saturated CTR IC/IF(sat) IF = 10 mA, VCE = 1 V 500 ― ― % VCE(sat) IC = 10 mA, IF = 1 mA ― ― 1.0 Collector-emitter saturation voltage IC = 100 mA, IF = 10 mA 0.3 ― 1.2 VF = 0.7 V, VCE = 200 V ― ― 20 μA Min Typ. Max Unit ― 0.8 ― pF 5×1010 1014 ― Ω 2500 ― ― Vrms Current transfer ratio Off-state collector current IC(off) V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H.≤ 60 % Isolation voltage © 2019 Toshiba Electronic Devices & Storage Corporation BVS AC, 60 s 3 2019-05-27 TLP127 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10 V, IC = 10 mA RL = 100 Ω RL = 180 Ω VCC = 10 V, IF = 16 mA (Fig.1) Min Typ. Max ― 40 ― ― 15 ― ― 50 ― ― 15 ― ― 5 ― ― 40 ― ― 80 ― Unit μs μs Fig.1: Switching time test circuit IF VCC IF ts RL VCE VCE tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 VCC 9V 1V tOFF 2019-05-27 TLP127 IF – Ta PC – Ta 200 Collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 I F – VF Pulse width ≤ 100μs Ta = 25°C 50 Ta = 25°C 1000 300 Forward current Pulse forward current 500 100 50 30 10-3 120 100 IF (mA) IFP (mA) IFP – DR 10 100 80 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3000 60 10-2 10-1 30 10 5 3 1 0.5 0.3 100 0.1 0.6 Duty cycle ratio DR 0.8 1.0 1.2 1.4 1.6 1.8 2.6 3.0 Forward voltage VF (V) IFP – VFP (mA) 1000 IFP -2.8 -2.4 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) ΔVF / ΔTa – IF -3.2 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width ≤ 10μs 5 Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-05-27 TLP127 IC – VCE IC – IF 160 300 Ta = 25°C (mA) IC (mA) 4mA 10mA Collector current Collector current IC 120 2mA 80 1mA 40 Sample A 100 50 30 Sample B 10 5 Ta = 25°C VCE = 1.2V VCE = 1V 3 IF = 0.5mA 0 0.4 1 0.8 1.6 1.2 0.5 2.0 1 3 10 Forward current Collector–emitter voltage VCE (V) Switching Time – RL 10000 Ta = 25°C VCC = 10V 500 50 100 IF (mA) Ta = 25°C VCE = 1.2V VCE = 1V Sample A 5000 300 Current transfer ratio IC / IF (%) tOFF(IF = 16mA) 100 tOFF(IF = 1.6mA) 50 30 IC / IF – IF 1000 Switching time (μs) 5 30 tON(IF = 1.6mA) 10 5 3 3000 Sample B 1000 500 300 tON(IF = 16mA) 1 50 100 300 500 1k Load resistance RL 3k 5k 100 0.3 10k (kΩ) 0.5 1 3 5 Forward current 30 10 50 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-05-27 TLP127 IC – Ta ICEO – Ta 101 120 (mA) 80 IF = 10mA 60 40 1mA 20 0 -40 10-1 -20 0 20 40 60 80 100 80 100 Ambient temperature Ta (°C) VCE = 200V 150V 80V 10-2 VCE(sat) – Ta 1.2 IF = 1mA IC = 10mA Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (μA) 100 100 Collector current IC VCE = 1V 10-3 1.0 0.8 0.6 0.4 0.2 10-4 0 20 40 60 80 0 -40 100 Ambient temperature Ta (°C) -20 0 20 40 60 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-05-27 TLP127 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-05-27
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