TLP130

TLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and operate directly by AC input current. • • • • • Collector−emitter voltage: 80V(min.) Current transfer ratio: 50%(min.) Rank GB: 100%(min.) Isolation voltage: 3750Vrms(min.) UL recognized: UL1577, file no.E67349 Current transfer ratio Unit in mm TOSHIBA Classi− fication Standard Rank GB Current Transfer Ratio IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. 50 100 600 600 Marking Of Classification Blank, Y, GR, GB GB,GR 1 11−4C2 Weight: 0.09 g (Note) Application type name for certification test, please use standard product type name, i.e. TLP130(GB): TLP130 6 5 3 4 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base 1 2007-10-01 TLP130 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current LED Forward current derating (Ta≥53°C) Peak forward current (100μs pulse,100pps) Junction temperature Collector−emitter voltage Collector−base voltage Emitter−collector voltage Detector Emitter−base voltage Collector current Peak collector current (10ms pulse,100pps) Power dissipation Power dissipation derating (Ta≥25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) Symbol IF(RMS) ΔIF / °C IFP Tj VCEO VCBO VECO VEBO IC ICP PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating 50 −0.7 1 125 80 80 7 7 50 100 150 −1.5 125 −55~125 −55~100 260 200 −2.0 3750 Unit mA mA / °C A °C V V V V mA mA mW mW / °C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF(RMS) IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 48 25 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP130 Individual Electrical Characteristics (Ta = 25°C) Characteristic LED Forward voltage Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage Emitter−base breakdown voltage Detector Collector dark current Collector dark current Collector dark current DC forward current gain Capacitance collector to emitter Symbol VF CT Test Condition IF = ±10mA V = 0, f = 1MHz Min. 1.0 ― 80 7 80 7 ― ― ― ― ― ― Typ. 1.15 60 ― ― ― ― 10 2 0.5 0.1 400 10 Max. 1.3 ― ― ― ― ― 100 50 10 ― ― ― Unit V pF V V V V nA μA μA nA ― pF V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA V(BR)CBO IC = 0.1mA V(BR)EBO IE = 0.1mA ICEO ICER ICBO hFE CCE VCE = 48V VCE = 48V, Ta = 85°C VCE = 48V, Ta = 85°C RBE = 1MΩ VCB = 10V VCE = 5V, IC = 0.5mA V = 0 , f = 1MHz Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = ±5mA, VCE = 5V Rank GB IF = ±1mA, VCE = 0.4V Rank GB IF = ±5mA, VCB = 5V IC = 2.4mA, IF = ±8mA Collector-emitter saturation voltage Off−state collector current CTR symmetry VCE(sat) IC = 0.2mA, IF = ±1mA Rank GB IC(off) IC(ratio) IF = ±0.7mA, VCE = 48V IC(IF = −5mA) / IC(IF = 5mA) (Note 2) Min. 50 100 ― 30 ― ― ― ― ― 0.33 Typ. ― ― 60 ― 10 ― 0.2 ― 1 ― Max. 600 600 ― ― ― 0.4 ― 0.4 10 3 μA ― V Unit % Saturated CTR Base photo−current IC / IF(sat) IPB % μA (Note 2) IC(ratio) = IC2 (IF = IF2, VCE = 5V) IC1(IF = IF1, VCE = 5 V) IF1 IC1 VCE IC2 IF2 3 2007-10-01 TLP130 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS=0, f=1MHz VS=500V AC, 1minute Isolation voltage BVS AC, 1second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 3750 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn-off time Turn−on time Storage time Turn-off time Symbol tr tf ton toff tON tS tOFF tON tS tOFF RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = ±16mA RL = 1.9kΩ (Fig.1) RBE = 220kΩ VCC = 5 V, IF = ±16mA VCC = 10V, IC = 2mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― ― ― ― Typ. 2 3 3 3 2 25 40 2 20 30 Max. ― ― ― ― ― ― ― ― ― ― μs μs μs Unit Fig. 1 Switching time test circuit IF VCC RL RBE VCE IF ts VCE VCC 4.5V 0.5V tOFF tON 4 2007-10-01 TLP130 IF – Ta 100 200 PC – Ta Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 160 60 120 40 80 20 40 0 −20 0 20 40 60 80 100 120 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100μs Ta = 25°C 100 50 Ta = 25°C IF – VF Pulse forward current IFP (mA) 500 300 (mA) IF Forward current 10 −3 1000 30 10 5 3 100 50 30 1 0.5 0.3 10 3 3 10 −2 3 10 −1 3 10 0 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) ΔVF / ΔTa – IF Forward voltage temperature Coefficient ΔVF / ΔTa (mV / °C) −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 1000 IFP – VFP (mA) IFP Pulse forward current 500 300 100 50 30 10 5 3 1 0.6 Pulse width ≤ 10μs Repetitive Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 2.2 2.6 3.0 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP130 IC – VCE 50 50mA 40 30mA 20mA 15mA 10mA PC(MAX) IF = 5mA 10 Ta = 25°C 30 Ta = 25°C IC – VCE (mA) (mA) IF = 50mA 40mA 20 30mA 20mA 10mA IC 30 Collector current 20 Collector current IC 10 5mA 2mA 0 0 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 Collector–emitter voltage VCE (V) Collector–emitter voltage VCE (V) IC – IF 100 50 IC / IF – IF 1000 IC / IF (%) Ta = 25°C VCE = 10V VCE = 5V VCE = 0.4V Ta = 25°C IC (mA) 30 500 10 5 3 Sample A 300 Sample A Sample B 1 0.5 0.3 0.1 0.3 VCE = 10V VCE = 5V VCE = 0.4V Current transfer ratio Collector current 100 Sample B 50 30 0.3 0.5 1 3 5 10 30 50 100 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) IC – IF at RBE 100 Ta = 25°C 50 VCE = 5V 30 10 5 3 IF 1 0.5 0.3 0.1 0.1 RBE = ∞ 500kΩ 50kΩ RBE 100kΩ VCC 300 Ta = 25°C IF VCB IPB – IF (μs) IPB (mA) 100 30 IC VCB = 0V Base photo current Collector current 10 3 1 0.3 0.1 0.1 A VCB = 5V A 0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) 6 2007-10-01 TLP130 ICEO – Ta 101 0.24 VCE(sat) – Ta IF = 5mA Ic = 1mA 100 Collector–emitter saturation Voltage VCE(sat) (V) 0.20 0.16 (μA) VCE = 48V 1 0 −1 24V 10V 5V 0.12 ICEO 0.08 Collector dark current 0.04 0 −40 1 0 −2 −20 0 20 40 60 80 100 Ambient temperature 1 0 −3 Ta (℃) 1 0 −4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IC – Ta 100 VCE = 5V IF = 25mA 300 Switching Time – RL Ta = 25°C IF = 16mA VCC = 5V RBE = 220kΩ 100 50 30 10mA 5mA (mA) IC (μs) 10 50 30 tOFF ts Collector current 3 Switching time 5 1mA 1 10 5 0.5 0.3 0.5mA 3 tON 0.1 -20 0 20 40 60 80 100 1 1 3 5 10 30 50 100 Ambient temperature Ta (℃) Load resistance RL (kΩ) 7 2007-10-01 TLP130 Switching Time – RBE 1000 Ta = 25°C IF = 16mA 500 300 VCC = 5V RL = 1.9kΩ 300 1000 Ta = 25°C IF = 16mA 500 VCC = 5V Switching Time – RL tOFF 100 100 tOFF (μs) (μs) Switching time 30 ts Switching time 50 50 30 ts 10 10 5 3 tON 5 3 tON 1 100k 300k 1M 3M ∞ 1 1 3 5 10 30 50 100 Base-emitter resistance RBE (Ω) Load resistance RL (kΩ) 8 2007-10-01 TLP130 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01