TLP130GBF

TLP130 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP130 Programmable Controllers AC / DC−Input Module Telecommunication Unit: mm The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two gallium arsenide infrared emitting diodes connected inverse parallel, and operate directly by AC input current. • Collector−emitter voltage: 80 V (min) • Current transfer ratio: 50 % (min) Rank GB: 100 % (min) • Isolation voltage: 3750 Vrms (min) • UL recognized: UL1577, file no. E67349 • Current transfer ratio Current Transfer Ratio (%) (IC/IF) Classification IF = 5mA, VCE = 5V, Ta = 25°C TOSHIBA Weight: 0.09 g (typ.) Marking of Classification Min Max Standard 50 600 Blank, GB Rank GB 100 600 GB 11−4C2 Pin Configurations (top view) (Note) Application type name for certification test, please use standard product type name, i.e. TLP130(GB): TLP130 1 6 5 3 4 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base Start of commercial production 1 1988/04 2014-09-08 TLP130 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Forward current IF(RMS) 50 mA Forward current derating (Ta≥53°C) ∆IF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100 pps) ICP 100 mA Power dissipation PC 150 mW ∆PC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ∆PT / °C −2.0 mW / °C BVS 3750 Vrms Detector LED Characteristic Power dissipation derating (Ta≥25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1minute, R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 48 V Forward current IF(RMS) ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2014-09-08 TLP130 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min Typ. Max Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Capacitance CT V = 0, f = 1MHz ― 60 ― pF V(BR)CEO IC = 0.5mA 80 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA VCE = 48V, Ta = 85°C ― 2 50 μA Collector−emitter breakdown voltage Emitter−collector breakdown voltage Detector Symbol Collector dark current ICEO Collector dark current ICER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 400 ― ― Capacitance collector to emitter CCE V = 0 , f = 1MHz ― 10 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― IF = ±5mA, VCB = 5V ― 10 ― IC = 2.4mA, IF = ±8mA ― ― 0.4 IC = 0.2mA, IF = ±1mA ― 0.2 ― ― ― 0.4 ― 1 10 μA 0.33 ― 3 ― Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio IC / IF Saturated CTR IC / IF(sat) Base photo−current IPB Collector-emitter VCE(sat) saturation voltage (Note 2) IC(ratio) = Test Condition IF = ±5mA, VCE = 5V Rank GB IF = ±1mA, VCE = 0.4V Rank GB Rank GB Off−state collector current CTR symmetry Symbol IC(off) IC(ratio) IF = ±0.7mA, VCE = 48V IC(IF = −5mA) / IC(IF = 5mA) (Note 2) IC2 (IF = IF2, VCE = 5V) IC1(IF = IF1, VCE = 5 V) IF1 % % μA V IC1 VCE IC2 IF2 3 2014-09-08 TLP130 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition VS = 0, f = 1MHz BVS Typ. Max Unit ― 0.8 ― pF ― Ω 10 VS = 500V 5×10 AC, 1minute Isolation voltage Min 14 10 3750 ― ― AC, 1second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min Typ. Max Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 25 ― ― 40 ― ― 2 ― ― 20 ― ― 30 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10V, IC = 2mA RL = 100Ω (Fig.1) RL = 1.9 kΩ RBE = OPEN VCC = 5 V, IF = ±16mA RL = 1.9kΩ (Fig.1) RBE = 220kΩ VCC = 5 V, IF = ±16mA μs μs μs Fig. 1 Switching time test circuit IF VCC IF ts RL RBE VCE VCE tON 4 VCC 4.5V 0.5V tOFF 2014-09-08 TLP130 IF – Ta PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 −20 0 40 20 60 100 80 Ambient temperature Ta 160 120 80 40 0 −20 120 0 40 20 Ambient temperature (°C) IFP – DR Pulse width ≤ 100μs (mA) 500 IF 300 Forward current Pulse forward current IFP (mA) 1000 100 50 30 10 −3 3 10 −2 3 10 Duty cycle ratio −1 3 10 0 DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 ΔVF / ΔTa – IF 1.2 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP −3.2 −2.8 (mA) −2.4 IFP 1000 Pulse forward current Forward voltage temperature Coefficient ΔVF / ΔTa (mV / °C) (°C) Ta = 25°C Forward voltage −2.0 −1.6 −1.2 −0.8 −0.4 0.1 Ta 120 50 Ta = 25°C 10 3 100 80 IF – VF 100 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width ≤ 10μs 5 Frequency = 100Hz Ta = 25°C 1.0 1.4 1.8 Pulse forward voltage 5 2.2 VFP (V) 2014-09-08 TLP130 IC – VCE IC – VCE 30 Ta = 25°C Ta = 25°C IF = 50mA (mA) 50mA 40 IC 30mA 20mA 15mA 40mA 30mA 20 30 Collector current Collector current IC (mA) 50 10mA PC(MAX) 20 IF = 5mA 10 0 0 2 6 4 8 Collector–emitter voltage 20mA 10mA 5mA 10 2mA 0 0 10 0.2 IC / IF (%) Ta = 25°C Sample A Current transfer ratio IC (mA) Collector current 5 10 3 Sample B 1 VCE = 10V 0.5 VCE = 5V 0.3 VCE = 0.4V 0.1 0.3 0.5 1 3 5 10 Forward current 30 IF 50 VCE = 10V Ta = 25°C VCE = 0.4V 500 300 Sample A 100 Sample B 50 0.5 1 3 30 (μs) 10 IPB 30 Base photo current 100 5 3 VCC IF A 1 50kΩ 0.3 0.5 100kΩ 1 RBE (mA) IC Collector current Ta = 25°C 50 VCE = 5V 0.1 0.1 3 5 Forward current 10 30 50 100 IF (mA) IPB – IF 300 RBE = ∞ 500kΩ 5 Forward current (mA) IC – IF at RBE 0.3 VCE (V) VCE = 5V 30 0.3 100 100 0.5 1.0 IC / IF – IF 1000 50 30 0.8 Collector–emitter voltage VCE (V) IC – IF 100 0.6 0.4 10 30 50 10 IF (mA) VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 100 Ta = 25°C 0.3 0.5 1 3 Forward current 6 5 10 30 50 100 IF (mA) 2014-09-08 TLP130 ICEO – Ta VCE(sat) – Ta 101 ICEO Collector dark current Collector–emitter saturation Voltage VCE(sat) (V) 0 (μA) 10 0.24 VCE = 48V 24V 10V 10−1 5V 10−2 IF = 5mA Ic = 1mA 0.20 0.16 0.12 0.08 0.04 0 −40 −20 20 0 40 80 60 Ambient temperature Ta 100 (℃) 10−3 10−4 0 20 60 40 Ambient temperature 100 80 Ta 120 (°C) IC – Ta Switching Time – RL 100 VCE = 5V Ta = 25°C 300 IF = 16mA IF = 25mA 50 30 VCC = 5V RBE = 220kΩ 10mA 5mA (μs) 10 5 Switching time Collector current IC (mA) 100 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 tON 0.1 -20 0 20 40 Ambient temperature 60 Ta 80 1 1 100 3 5 10 Load resistance (℃) 7 30 RL 50 100 (kΩ) 2014-09-08 TLP130 Switching Time – RBE 1000 Switching Time – RL 1000 Ta = 25°C IF = 16mA IF = 16mA 500 VCC = 5V VCC = 5V 500 Ta = 25°C RL = 1.9kΩ 100 100 Switching time Switching time tOFF 50 ts 30 tOFF (μs) 300 (μs) 300 30 10 10 5 5 3 ts 50 3 tON 1 100k 300k 1M Base-emitter resistance tON 3M 1 1 ∞ RBE (Ω) 3 5 10 Load resistance 8 30 RL 50 100 (kΩ) 2014-09-08 TLP130 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 9 2014-09-08