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TLP141G

TLP141G

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP141G - Photo−Transistor Programmable Controllers - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP141G 数据手册
TLP141G TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP141G Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA mini flat coupler TLP141G is a small outline coupler, suitable for surface mount assembly. The TLP141G consists of a photo thyristor, optically coupled to a gallium arsenide infrared emitting diode. • • • • • Peak off−state voltage: 400 V (min.) Trigger LED current: 10 mA (max.) On-state current: 150 mA (max.) Isolation voltage: 2500 Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.09 g 11−4C2 Pin Connections 1 6 5 3 4 1 : Anode 3 : Cathode 4 : Cathode 5 : Anode. 6 : Gate 1 2007-10-01 TLP141G Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Peak forward voltage(RGK = 27kΩ) Peak reverse voltage(RGK = 27kΩ) Detector On−state current On−state current derating (Ta ≥ 25°C) Peak one cycle surge current Peak reverse gate voltage Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., RH ≤ 60%) (Note 1) Symbol IF ΔIF/°C IFP VR Tj VDRM VDRM IT(RMS) ΔIT / °C ITSM VGM Tj Tstg Topr Tsol BVS Rating 50 −0.7 1 5 125 400 400 150 −2.0 2 5 100 −55~125 −55~100 260 2500 Unit mA mA / °C A V °C V V mA mA / °C A V °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Operating temperature Gate to cathode resistance Gate to cathode capacitance Symbol VAC IF Topr RGK CGK Min. ― 15 −25 ― ― Typ. ― 20 ― 27 0.01 Max. 120 25 85 33 0.1 Unit Vac mA °C kΩ μF Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP141G Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Off−state current Symbol VF IR CT IDRM Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VAK = 400 V RGK = 27 kΩ VKA = 70 mA RGK = 27 kΩ ITM = 100 mA RGK = 27 kΩ VAK = 280 V, RGK = 27 kΩ V = 0, f = 1 MHz Anode to gate Gate to cathode Ta = 25°C Ta = 100°C Ta = 25°C Ta = 100°C Min. 1.0 ― ― ― ― ― ― ― ― 5 ― ― Typ. 1.15 ― 30 10 1 10 1 0.9 0.2 10 20 350 Max. 1.3 10 ― 5000 100 5000 100 1.3 1 ― ― ― Unit V μA pF nA μA nA μA V mA V / μs pF Reverse current Detector On−state voltage Holding current Off−state dv / dt Capacitance IRRM VTM IH dv/dt Cj Coupled Characteristics (Ta = 25°C) Characteristic Trigger LED current Turn−on time Coupled dv / dt Capacitance (input to output) Isolation resistance Symbol IFT ton dv/dt CS RS Test Condition VAK = 6 V, RGK = 27kΩ IF = 50mA, RGK = 27kΩ VS = 500 V, RGK = 27kΩ VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― ― 500 ― 5×10 10 Typ. 4 10 ― 0.8 10 14 Max. 10 ― ― ― ― ― ― ― Unit mA μs V / μs pF Ω Vrms Vdc 2500 ― ― ― 5000 5000 3 2007-10-01 TLP141G IF – Ta 100 250 IT(RMS) – Ta 80 Allowable forward current IF (mA) 200 60 R.m.s. on-state current IT(RMS) (mA) 0 20 40 60 80 100 120 150 40 100 20 50 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100 μs Ta = 25°C 100 Ta = 25°C IF – V F Allowable pulsed forward current IFP (mA) 1000 (mA) Forward current 10-3 3 10-2 3 1 0 -1 3 100 30 IF 100 30 10 10 3 1 0.3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ΔVF/ΔTa Forward voltage temperature coefficient ΔVF/ rΔTa (mV/°C)C (mA) -3.2 - IF 1000 IFP – VFP -2.8 -2.4 -2.0 -1.6 -1.2 Pulse forward current IFP (mA) 300 100 30 10 Pulse width ≤ 10 μs Pepetitive frequency 3 1 0.6 = 100 Hz Ta = 25°C -0.8 -0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP141G ton – IF 30 Ta = 25°C RL=100Ω 200 dv / dt – RGK Ta = 25°C Critical rate of rise of Off-state voltage dv / dt (V / μs) Turn-on time ton (μs) VAA=50V 20 100 VAK=200V 50 30 400V RGK=10kΩ 10 27kΩ 1 0 10 20 30 40 10 Forward current IF(mA) 1 VAK=6V RL=100Ω 3 5 10 30 50 100 IFT – Ta 20 Gate-cathode resistance RGK (kΩ) Trigger LED current IFT (mA) 10 RGK=10kΩ 100 IFT – RGK Ta = 25°C VAK=6V 50 30 RL=100Ω 5 27kΩ 3 0 20 40 60 80 100 Ambient temperature Ta (°C) IH – Ta 0.7 0.5 RGK=10kΩ Trigger LED current IFT (mA) 10 5 Holding current IH (mA) 0.3 27kΩ 2 1 3 5 10 30 50 100 200 Gate-cathode resistance RGK (kΩ) 0.1 0 20 40 60 80 100 Ambient temperature Ta (°C) IH – RGK 5 3 Ta = 25°C dv / dt – CGK Ta = 85°C VAK = 400V 300 R GK= 27kΩ 500 IH (mA) Critical rate of rise of off-state voltage dv / dt (V/μs) 1 100 50 30 Holding current 0.5 0.3 10 5 0.001 0.1 1 0.003 0.005 0.01 3 5 10 30 50 100 200 Gate-cathode capacitance CGK(μF) Gate-cathode resistance RGK (kΩ) 5 2007-10-01 TLP141G RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01
TLP141G
### 物料型号 - 型号:TLP141G - 制造商:TOSHIBA

### 器件简介 TLP141G是东芝公司生产的一款小型化、适用于表面贴装组装的光耦合器。它由一个光可控硅管和与之光电隔离的砷化镓红外发光二极管组成。

### 引脚分配 - 引脚1:阳极(Anode) - 引脚3:阴极(Cathode) - 引脚4:阴极(Cathode) - 引脚5:阳极(Anode) - 引脚6:门极(Gate)

### 参数特性 - 断态峰值电压:400V(最小值) - 触发LED电流:10mA(最大值) - 导通状态电流:150mA(最大值) - 隔离电压:2500Vrms(最小值) - UL认证:UL1577,文件编号E67349

### 功能详解 TLP141G光耦由红外发光二极管和光敏晶体管构成,可以实现电气隔离。它适用于可编程控制器AC输出模块和固态继电器等应用。

### 应用信息 TLP141G光耦适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性或其故障可能导致人员伤亡的设备(如原子能控制仪器、飞机或航天器仪器、交通仪器、交通信号仪器、燃烧控制仪器、医疗仪器、各种安全设备等)。

### 封装信息 TLP141G为小外形封装,适合表面贴装。
TLP141G 价格&库存

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