TLP160G

TLP160G

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP160G - PHOTOCOUPLER GAAS IRED & PHOTO TRIAC - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP160G 数据手册
TLP160G TOSHIBA Photocoupler GaAs Ired & Photo-Triac TLP160G Triac Drive Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA mini flat coupler TLP160G is a small outline coupler, suitable for surface mount assembly. The TLP160G consists of a photo triac, optically coupled to a gallium arsenide infrared emitting diode. • • • • • Peak off-state voltage: 400 V (min.) Trigger LED current: 10 mA (max.) On−state current: 70 mA (max.) Isolation voltage: 2500 Vrms (min.) UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.09 g 11−4C3 Trigger LED Current Classi− fication* (IFT5) (IFT7) Standard Trigger LED Current (mA) VT=3V, Ta=25°C Min. Max. ― ― ― 5 7 10 Marking of Classification T5 T5, T7 T5, T7, blank Pin Configurations 1 6 *Ex. (IFT5); TLP160G (IFT5) (Note) Application type name for certification test, please use standard product type name, i.e. TLP160G(IFT5): TLP160G 3 1. Anode 3. Cathode 4. Terminal 1 6. Terminal 2 4 1 2007-10-01 TLP160G Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100μs pulse, 100 pps) Reverse voltage Junction temperature Off− state output terminal voltage On−state RMS current Detector Ta=25°C Ta=70°C Symbol IF ΔIF / °C IFP VR Tj VDRM IT(RMS) ΔIT / °C ITP ITSM Tj Tstg Topr Tsol (Note) BVS Rating 50 −0.7 1 5 125 400 70 40 −0.67 2 1.2 115 −55~125 −40~100 260 2500 Unit mA mA / °C A V °C V mA mA / °C A A °C °C °C °C Vrms On−state current derating (Ta ≥ 25°C) Peak on−state current (100μs pulse, 120 pps) Peak nonrepetitive surge current (PW=10ms, DC=10%) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Isolation voltage (AC, 1 min., R.H. ≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current Peak on−state current Operating temperature Symbol VAC IF ITP Topr Min. ― 15 ― −25 Typ. ― 20 ― ― Max. 120 25 1 85 Unit Vac mA A °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP160G Individual Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage LED Reverse current Capacitance Peak off−state current Peak on−state voltage Detector Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt(c) IF=10mA VR=5V V=0, f=1MHz VDRM=400V ITM=70mA ― Vin=120Vrms, Ta=85°C IT=15mA, Vin=30Vrms (Fig.1) (Fig.1) Test Condition Min. 1.0 ― ― ― ― ― 200 ― Typ. 1.15 ― 30 10 1.7 0.6 500 0.2 Max. 1.3 10 ― 1000 2.8 ― ― ― Unit V μA pF nA V mA V / μs V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Capacitance input to output Isolation resistance Symbol IFT Cs RS VT=3V VS=0, f=1MHz VS=500V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Turn−on time tON VD=6→4V, RL = 100Ω IF=rated IFT×1.5 Test Condition Min. ― ― 1×10 12 Typ. 5 0.8 10 14 Max. 10 ― ― ― ― ― 100 Unit mA pF Ω Vrms Vdc μs 2500 ― ― ― ― 5000 5000 30 Fig.1 dv / dt Test Circuit Rin VCC + - 120Ω 1 3 6 4 Vin RL 2kΩ ~ 5V,VCC 0V dv / dt (c) dv / dt 3 2007-10-01 TLP160G IF – Ta 60 120 IT(RMS) – Ta 50 100 Allowable forward current IF (mA) R.m.s. on-state current IT(RMS) (mA) 0 20 40 60 80 100 120 40 80 30 60 20 40 10 20 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100μs Ta = 25°C 50 1000 500 100 Ta = 25°C IF – V F Allowable pulse forward current IFP (mA) (mA) IF Forward current 10-3 3 10-2 3 1 0 -1 3 100 30 10 5 3 100 50 1 0.5 0.3 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ΔVF / ΔTa -3.2 - IF 1000 500 300 IFP – VFP Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -2.8 -2.4 -2.0 -1.6 -1.2 Pulse forward current IFP (mA) 100 50 30 10 5 3 1 0.6 Pulse width ≦ 10 μs Repetitive frequency = 100 Hz Ta = 25°C -0.8 -0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP160G Normalized IFT – Ta 3 VT=3V 2 2 3 Normalized IH – Ta Trigger LED current IFT (arbitrary unit) 0.5 Holding current IH (arbitray unit) 20 60 80 100 1.2 1 1.2 1 0.5 0.3 0.3 0.1 -40 -20 0 40 0.1 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Normalized IDRM – Ta 103 VDRM=Rated 1.4 Normalized VDRM – Ta 102 Off-state output terminal voltage VDRM(arbitrary unit) 1.2 Peak off-state current IDRM (Arbitrary unit) 1.0 0.8 101 0.6 0.4 100 0.2 -40 -20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Normalized LED Current -LED Current Pulse Width 10 Normalized LED current IF / IFT 5 3 2 1.8 1.6 1.4 1.2 1 10 30 50 100 300 500 1000 LED current pulse width Pw (μs) 5 2007-10-01 TLP160G RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01
TLP160G
1. 物料型号: - 型号为TLP160G,是东芝公司生产的光耦。

2. 器件简介: - TLP160G是一个小型化的光耦器件,适合于表面贴装组装。它由一个光三极管和与砷化镓红外发光二极管光耦合组成。

3. 引脚分配: - 引脚配置如下: - 1. 阳极 - 3. 阴极 - 4. 终端1 - 6. 终端2

4. 参数特性: - 峰值关断电压:400V(最小值) - 触发LED电流:10mA(最大值) - 导通状态下的电流:70mA(最大值) - 隔离电压:2500Vrms(最小值)

5. 功能详解: - TLP160G光耦主要用于隔离控制,可以用于程序控制器、交流输出模块、固态继电器等场合。它通过光电效应实现信号的隔离传输。

6. 应用信息: - 该光耦适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备。

7. 封装信息: - 封装为小外形封装,适合表面贴装。
TLP160G 价格&库存

很抱歉,暂时无法提供与“TLP160G”相匹配的价格&库存,您可以联系我们找货

免费人工找货