TLP172G(TP,F)

TLP172G TOSHIBA Photocoupler Photorelay TLP172G Modem·Fax Cards, Modems in PC Telecommunications PBX Measurement Equipment Unit: mm The Toshiba TLP172G consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP172G is suitable for the modem applications which require space savings. • 4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm • 1-Form-A • Peak Off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 110 mA (max) • On-state resistance: 35 Ω (max t < 1 s) • On-state resistance: 50 Ω (max continuous) • Isolation voltage: 1500 Vrms (min) JEDEC • UL-recognized: UL 1577, File No.E67349 ― • cUL-recognized: CSA Component Acceptance Service No.5A JEITA ― File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) TOSHIBA 11-5H1 Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 4 1: Anode 2: Cathode 3: Drain 4: Drain 2 3 Start of commercial production 2001/12 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP172G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ∆IF/°C −0.5 mA/°C Forward current Forward current derating (Ta ≥ 25°C) Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 110 mA ∆ION/°C −1.1 mA/°C PC 300 mW ΔPC / °C −3.0 mW / °C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms LED Diode power dissipation derating (Ta >25°C) Junction temperature Off-state output terminal voltage On-state current Detector On-state current derating (Ta ≥ 25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics LED Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT V = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 350 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  30  pF Detector © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP172G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 110 mA  1 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA 25 35 RON ION = 110 mA, IF= 5 mA, t < 1 s  On-state resistance ION = 110 mA, IF= 5 mA, continuous  35 50 Min Typ. Max Unit  0.8  pF 1014  Ω 1500   Vrms Min Typ. Max Unit  0.3 1  0.1 1 Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Test Condition CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 4 RL VDD IF VOUT 2 3 VOUT 90% 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP172G IF – Ta ION – Ta (mA) 240 160 Allowable On-sate current Allowable forward current 200 ION 80 IF (mA) 100 60 40 20 0 −20 0 20 40 60 80 100 120 80 40 0 −20 120 0 20 Ambient temperature Ta (°C) 40 80 100 120 Ambient temperature Ta (°C) I F – VF ION – VON 100 200 Ta = 25°C 10 ION 3 On-state current (mA) (mA) 30 Forward current IF 60 1 Ta = 25°C IF = 5 mA 100 0 −100 0.3 0.1 0.6 0.8 1 1.2 Forward voltage −200 −4 1.8 −3 −2 (V) −1 0 1 2 On-state voltage VON RON – Ta 4 (V) IFT – Ta 5 ION = 110 mA IF = 5 mA t