TLP174G(TP,F)

TLP174G TOSHIBA Photocoupler Photorelay TLP174G Modem·Fax Cards, Modems in PC Telecommunications PBX Measurement Equipment Unit: mm The Toshiba TLP174G consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. Because of the high-voltage MOS FET used for the output stage, the TLP174G is suitable for replacement of dial pulse relay and hook relay of modem and facsimile, and also suitable for PBX and the line interface section of exchange. In addition, the MOS FET control circuit is provided the current limiting function, and it conforms to the FCC Part 68 new standard. • 4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm • 1-Form-A • Peak Off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) JEDEC ― • Limit current: 150 mA to 300 mA (t = 5 ms) JEITA ― • On-state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) TOSHIBA • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A 11-5H1 Weight: 0.1 g (typ.) File No.E67349 Pin Configuration (top view) 1 4 2 3 1: Anode 2: Cathode 3: Drain 4: Drain Start of commercial production 2002-02 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP174G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ΔIF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 120 mA ΔION/°C −1.2 mA/°C PO 300 mW ΔPO / °C −3.0 mW / °C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1) BVS 1500 Vrms Forward current Forward current derating (Ta≥25°C) LED Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage On-state current Detector On-state current derating (Ta≥25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristics LED Symbol Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA CT VF = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 350 V   1 μA Capacitance between terminals COFF V = 0 V, f = 1 MHz  70  pF Capacitance between terminals Detector Test Condition © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP174G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 120 mA  1 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA Load current limiting ILIM IF = 5 mA, VDD = 5 V, t = 5 ms 150  300 mA On-state resistance RON ION = 120 mA, IF = 5 mA  17 35 Ω Min Typ. Max Unit  0.8  pF 1014  Ω 1500   Vrms Min Typ. Max Unit  0.3 1  0.1 1 Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Test Condition VS = 0 V, f = 1 MHz CS Isolation resistance RS VS = 500 V, R.H.≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 4 RL VDD IF VOUT 2 3 VOUT 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 90% tOFF 2019-06-17 TLP174G IF – Ta ION – Ta 240 (mA) (mA) 100 Allowable On-sate current Allowable forward current IF ION 80 60 40 20 0 −20 0 20 40 60 80 100 200 160 120 80 40 0 −20 120 0 20 Ambient temperature Ta (°C) 40 Ta = 25°C (mA) (mA) 3 1 0 0.8 1 1.2 Forward voltage Ta = 25°C IF = 5 mA 100 1.4 VF 1.6 0 −100 −200 −2 1.8 −1 (V) 0 IFT (mA) ION = 120 mA Trigger LED current (Ω) On-state resistance RON (V) IFT – Ta ION = 120 mA IF = 5 mA t