TLP176D

TLP176D TOSHIBA Photocoupler GaAs IRED & Photo-MOSFET TLP176D Modem in PC Modem ⋅ Fax Card Telecommunication The TOSHIBA TLP176D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP176D is suitable for modem and PBX applications which require space savings. • • • • • • • SOP 4 pin (2.54SOP4): 1-form-A Peak off-state voltage: 200 V (min) Trigger LED current: 3 mA (max) On-state current: 200 mA (max) On-state resistance: 8 Ω (max) Isolation voltage: 1500 Vrms (min) UL recognized: UL1577, file No. E67349 JEDEC JEITA 1-form A 1 4 Unit: mm Pin Configuration (top view) ⎯ ⎯ TOSHIBA 4 3 Weight: 0.1 g (typ.) 2 1: Anode 2: Cathode 3: Drain 4: Drain 3 1 2 Internal Circuit 1 4 2 3 1 2007-10-01 TLP176D Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 25°C) LED Pulse forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state current Detector On-state RMS current derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note) Symbol IF ΔIF/°C IFP VR Tj VOFF ION ΔION/°C Tj Tstg Topr Tsol BVS Rating 50 −0.5 1 5 125 200 200 −2.0 125 −55 to 125 −40 to 85 260 1500 Unit mA mA/°C A V °C V mA mA/°C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min ⎯ 5 ⎯ −20 Typ. 150 7.5 ⎯ ⎯ Max 200 25 130 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP176D Individual Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 200 V V = 0, f = 1 MHz Test Condition Min 1.0 ⎯ ⎯ ⎯ ⎯ Typ. 1.15 ⎯ 30 ⎯ 100 Max 1.3 10 ⎯ 1 ⎯ Unit V μA pF μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current On-state resistance Symbol IFT RON Test Condition ION = 200 mA ION = 200 mA, IF = 5 mA Min ⎯ ⎯ Typ. 1 5 Max 3 8 Unit mA Ω Isolation Characteristics (Ta = 25°C) Characteristics Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min ⎯ 5× 10 10 1500 ⎯ ⎯ Typ. 0.8 10 14 Max ⎯ ⎯ ⎯ ⎯ ⎯ Unit pF Ω Vrms Vdc ⎯ 3000 3000 Switching Characteristics (Ta = 25°C) Characteristics Turn-on time Turn-off time Symbol tON tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA RL = 200 Ω VDD = 20 V, IF = 5 mA (Note) (Note) Min ⎯ ⎯ Typ. 0.6 0.1 Max 1.5 1.0 Unit ms ms Note: Switching time test circuit IF 1 4 RL VDD VOUT IF 2 3 VOUT tON 10% tOFF 90% 3 2007-10-01 TLP176D IF – Ta 100 350 ION – Ta MOSFET ON-state current ION (mA) 300 250 200 150 100 50 0 −20 Allowable forward current IF (mA) 80 60 40 20 0 −20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – V F 100 300 ION – VON Ta = 25°C IF = 5 m A MOSFET ON-state current ION (mA) 1.6 1.8 Ta = 25°C 30 200 Allowable forward current IF (mA) 10 100 3 0 1 −100 0.3 0.1 0.6 −200 0.8 1.0 1.2 1.4 −300 −1 −0.5 0 0.5 1 Forward voltage VF (V) MOSFET ON-state voltage VON (V) RON – Ta 10 IFT – Ta 5 ION = 200 mA t