TLP176G(F)

TLP176G TOSHIBA Photocoupler IRED & Photo-MOS FET TLP176G Modem-Fax Cards PBX STB Measurement Equipment Unit mm The TOSHIBA TLP176G consists of an infrared emitting diode optically coupled to a photo-MOS FET in a SOP, which is suitable for surface mount assembly. Because of the high-voltage MOSFET used to output terminals, TLP176G is suitable for a hook relay of a modem, a facsimile, and dial pulls relay. • 4-pin SOP(2.54SOP4) • Peak off-state voltage: 350 V (min) On-state current:120 mA (max) • Trigger LED current: 3 mA (max) • On-state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 ― JEITA ― TOSHIBA VDE-approved: EN 60747-5-5 (Note 1) • JEDEC 11-5H1 Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 4 1 Schematic 1-Form-A 4 3 1 2 1 4 2 3 3 2 1. 2. 3. 4. : Anode : Cathode : Drain : Drain Start of commercial production 1997-10 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP176G Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C -0.5 mA / °C Pulse forward current (100μs pulse,100pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 120 mA ΔlON / °C -1.2 mA / °C PO 300 mW ΔPO / °C -3.0 mW / °C Tj 125 °C PT 350 mW ΔPT / °C -3.5 mW / °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature(10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1) BVS 1500 Vrms Forward current LED Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage Detector On-state current On-state current derating (Ta ≥ 25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Total power dissipation Total power dissipation derating(Ta ≥ 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr -20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP176G Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF Off-state current IOFF VOFF = 350 V ― ― 1 μA Capacitance between terminals COFF V = 0 V, f = 1 MHz ― 40 ― pF Min Typ. Max Unit ION = 120 mA ― 1 3 mA Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT On-state resistance RON ION = 120 mA, IF = 5 mA ― 22 35 Ω Return LED current IFC IOFF = 100 μA 0.1   mA Min Typ. Max Unit Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H ≤ 60 % Isolation voltage BVS AC, 60 s ― 0.8 ― pF 5×1010 1014 ― Ω 1500 ― ― Vrms Min Typ. Max Unit ― 0.3 1 ― 0.1 1 Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF TLP176G 1 4 2 3 RL VDD IF VOUT VOUT tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 90% 10% tOFF 2019-06-17 TLP176G IF – Ta ION – Ta 100 140 ION (mA) 60 On-state current Allowable forward current IF (mA) 120 80 40 20 100 80 60 40 20 0 -20 0 20 40 60 80 100 0 -20 120 Ambient temperature Ta (°C) 0 20 50 Ta = 25 °C 100 Ta = 25 °C (mA) 30 1000 500 Forward current IF Allowable pulse forward current IFP (mA) 80 I F – VF 100 Pulse width ≤ 100 μs 3000 60 Ambient temperature Ta (°C) IFP – DR 5000 40 300 100 50 30 10 10 5 3 1 0.5 0.3 10-3 10-2 10-1 0.1 0.6 100 0.8 Duty cycle ratio DR 1.0 1.2 Forward voltage ΔVF /ΔTa – IF 1.4 1.6 1.8 2.6 3.0 VF (V) IFP – VFP 1000 -2.0 -1.6 -1.2 -0.8 (mA) -2.4 300 IFP 500 100 Pulse forward current Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) -2.8 50 30 10 Pulse width ≤ 10 μs 5 Repetitive 3 Frequency = 100 Hz Ta = 25 °C -0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 (mA) 30 50 1 0.6 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 4 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP176G IFT – Ta ION – VON 150 ION = 120 mA ION (mA) 4 3 On-sate current Trigger LED current IFT (mA) 5 2 1 0 -40 -20 0 20 40 60 80 Ta = 25 °C IF = 5 mA 100 50 0 -50 -100 -150 -2.5 100 -1.5 -0.5 RON – Ta IF = 5 mA IOFF (nA) (Ω) Off-state current On-state resistance RON 20 10 VOFF = 350 V -20 0 20 40 60 80 300 100 50 30 10 5 3 1 -20 100 0 Ambient temperature Ta (°C) 20 40 60 VDD = 20 V RL = 200 Ω (μs) I = 5 mA 800 F Turn - off time tOFF (μs) RL = 200 Ω Turn - on time tON 100 tOFF – Ta 400 VDD = 20 V 600 400 200 -20 80 Ambient temperature Ta (°C) tON – Ta 0 -40 (V) 500 30 1000 2.5 IOFF – Ta 1000 ION = 120 mA 0 -40 1.5 On-state voltage VON Ambient temperature Ta (°C) 40 0.5 0 20 40 60 Ambient temperature Ta (°C) 80 100 IF = 5 mA 300 200 100 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 5 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP176G RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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