TLP180

TLP180

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP180 - Photocoupler GaAs Ired & Photo−Transistor - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP180 数据手册
TLP180 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP180 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable for surface mount assembly. TLP180 consist of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly by AC input current. • • • • • Collector−emitter voltage: 80 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065:2002, certificate no.8285 BS EN60950-1:2002, certificate no.8286 TOSHIBA Weight: 0.09 g 11−4C1 Unit in mm Pin Configuration (top view) 1 3 1: Anode, Cathode 3: Cathode, Anode 4: Emitter 6: Collector 6 4 1 2007-10-01 TLP180 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current LED Forward current detating (Ta≥53°C) Pulse forward current Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature(10s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC,1min.,R.H. ≤ 60%) (Note 2) (Note1) Symbol IF(RMS) ΔIF / °C IFP Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating ±50 −0.7 ±1 125 80 7 50 150 −1.5 125 −55~125 −55~100 260 200 −2.0 3750 Unit mA mA / °C A °C V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 100μs,f=100Hz Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF(RMS) IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 48 20 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP180 Electrical Characteristics (Ta = 25°C) Characteristic LED Forward voltage Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Detector Symbol VF CT V(BR) CEO V(BR) ECO Test Condition IF = ±10 mA V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 48 V (ambient light below 1000Lx) (Note3) VCE = 48 V (ambient light Ta = 85°C below 1000Lx) (Note3) V = 0, f = 1 MHz Min. 1.0 ― 80 7 ― ― ― Typ. 1.15 60 ― ― 0.01 (2) 2 (4) 10 Max. 1.3 ― ― ― 0.1 (10) 50 (50) ― Unit V pF V V μA μA pF Collector dark current ICEO Capacitance (collector to emitter) CCE Note 3: Please use standard electric lamp to light up the device's marking surface. Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = ±5 mA, VCE = 5 V Rank GB IF = ±1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = ±8 mA VCE (sat) IC = 0.2 mA, IF = ±1 mA Rank GB VF = ± 0.7V, VCE = 48 V IC (IF = −5mA) / IC (IF = 5mA) (Note4) MIn. 50 100 — 30 — — — — 0.33 Typ. — — 60 — — 0.2 — 1 1 Max. 600 600 — — 0.4 — 0.4 10 3 μA — V Unit % Saturated CTR IC / IF (sat) % Collector−emitter saturation voltage Off−state collector current CTR symmetry IC(off) IC (ratio) I (I = I , V = 5V) Note 4 : IC(ratio)= C2 F F2 CE IC1(IF = IF1, VCE = 5V) IC1 IF1 IC2 IF2 VCE 3 2007-10-01 TLP180 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0V, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 3750 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 kΩ VCC = 5 V, IF = ±16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 2 3 3 3 2 25 40 Max. ― ― ― ― ― ― ― μs μs Unit Fig. 1: Switching time test circuit IF RL IF tS VCE tON VCC 4.5V 0.5V tOFF VCC VCE 4 2007-10-01 TLP180 IF – Ta 100 200 PC – Ta Allowable forward current IF (mA) 80 60 40 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 160 120 80 20 40 0 −20 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100μs 100 IF – VF Pulse forward current IFP (mA) IF (mA) Forward current −3 −2 −1 0 1000 500 300 Ta = 25°C 10 1 100 50 30 0.1 10 3 0.01 85°C 0.001 0 25 °C 0.8 −25°C 10 3 10 3 10 3 10 Duty cycle ratio DR 0.4 1.2 1.6 2 Forward 25 °C voltage VF (V) ΔVF / ΔTa – IF −3.2 1000 IFP – VFP Pulse forward current IFP (mA) 500 300 Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 100 50 30 10 5 3 1 0.6 Pulse width ≤ 10μs Repetitive frequency = 100Hz Ta = 25°C 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP180 IC – VCE 50 Ta = 25°C 50mA 30 Ta = 25°C IC – VCE 50mA 40mA 30mA 20 20mA Collector current IC (mA) 30mA 20mA 15mA 10mA 30 Collector current IC (mA) 40 20 PC(MAX.) IF = 5mA 10mA 10 5mA 10 2mA 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – IF 100 Ta = 25°C 10 1 ICEO – Ta Collector current IC (mA) 30 10 5 3 Sample B 1 0.5 0.3 0.1 0.1 VCE = 10V VCE = 5V VCE = 0.4V 0.3 0.5 1 3 5 10 30 50 Collector dark current ID(ICEO) (μA) 50 10 0 Sample A 10 −1 VCE = 48V 24V 10 −2 10V 5V Forward current IF (mA) 10 −3 10 −4 0 20 40 60 80 100 IC / IF – IF 1000 Ta = 25°C Ambient temperature Ta (°C) 500 Current transfer ratio 300 Sample A (%) IC / IF 100 Sample B 50 30 VCE = 10V VCE = 5V VCE = 0.4V 10 0.1 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) 6 2007-10-01 TLP180 VCE(sat) – Ta 0.24 IF = 1mA IC = 0.2mA 100 IC – Ta VCE = 5V IF = 25mA 10mA 5mA 10 5 3 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.20 50 30 0.16 IF = 5mA, IC = 1mA 0.12 IF = 1mA, IC = 0.2mA 0.08 0.04 1mA 0 −40 1 −20 0 20 40 60 80 100 0.5 0.3 0.5mA Ambient temperature Ta (°C) 0.1 Switching 1000 Ta = 25°C IF = 16mA 500 VCC = 5V 300 Time – RL −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching tOFF 160 50 Time – Ta 100 tOFF ts 30 (μs) 50 30 ts (μs) Switching time Switching time 10 5 3 tON 1 10 5 0.5 3 0.3 tON 1 1 0.1 3 5 10 30 50 100 IF = 16mA VCC = 5V RL = 1.9kΩ −20 0 20 40 60 80 100 Load resistance RL (kΩ) Ambient temperature Ta (°C) 7 2007-10-01 TLP180 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01
TLP180
1. 物料型号: - 型号:TLP180 - 制造商:东芝(TOSHIBA)

2. 器件简介: - TLP180是一款小型化的光电耦合器,适合于表面贴装组装。它由一个与砷化镓红外发光二极管反向并行连接的光电晶体管组成,可以直接通过交流输入电流工作。

3. 引脚分配: - 引脚1:阳极(Anode) - 引脚3:阴极(Cathode) - 引脚4:发射极(Emitter) - 引脚6:集电极(Collector)

4. 参数特性: - 集电极-发射极电压:最小80V - 电流传输比:最小50% - 隔离电压:最小3750Vrms - 认证:UL1577文件编号E67349,BS EN60065:2002证书编号8285,BS EN60950-1:2002证书编号8286

5. 功能详解: - TLP180可以直接通过交流输入电流工作,适用于可编程控制器、单元在毫米单位的电信领域。

6. 应用信息: - 适用于电信、单元在毫米单位的可编程控制器等应用。

7. 封装信息: - 封装为小外形,适合表面贴装。
TLP180 价格&库存

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