TLP181_02

TLP181 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP181 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. · · · · · Collector−emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file no. E67349 Option (V4) type VDE approved: VDE0884 satisfied Maximum operating insulation voltage: 565VPK Highest permissible over voltage: 6000VPK TOSHIBA Weight: 0.09 g 11−4C1 Unit in mm Pin Configuration (top view) 1 3 1: Anode 3: Cathode 4: Emitter 6: Collector 6 4 1 2002-09-25 TLP181 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) Type Classification *1 IF = 5mA, VCE = 5V, Ta = 25°C Min. (None) Rank Y TLP181 Rank GR Rank BL Rank GB 50 50 100 200 100 Max. 600 150 300 600 600 BLANK, Y, Y■, G, G■, B, B■, GB Y, Y■ G, G■ B, B■ G, G■, B, B■, GB Marking Of Classification *1: EX, Rank GB: TLP181 (GB) (Note) Application, type name for certification test, please use standard product type name, i, e. TLP181 (GB): TLP181 2 2002-09-25 TLP181 Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current detating Pulse forward current (100µs pulse, 100pps) Reverse voltage Junction temperature Collector-emitter voltage Emitter-collector valtage Detector Collector current Collector power dissipation (1 Circuit) Collector power dissipation derating (1 Circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 1) LED Symbol IF ∆ I F / °C IFP VR Tj VCEO VECO IC PC ∆PC / °C Tj Tstg Topr Tsol PT ∆ P T / °C BVS Rating 50 -0.7 (Ta ≥ 53°C) 1 5 125 80 7 50 150 -1.5 125 -55~125 -55~100 260 (10s) 200 -2.0 3750 Unit mA mA / °C A V °C V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms (Note 1) Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― -25 Typ. 5 16 1 ― Max. 48 20 10 85 Unit V mA mA °C 3 2002-09-25 TLP181 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Symbol VF IR CT V(BR) CEO V(BR) ECO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 48 V, ( Ambient light below 1000 lx) VCE = 48 V, Ta = 85°C, ( Ambient light below 1000 lx) V = 0, f = 1 MHz Min. 1.0 — — 80 7 — — — Typ. 1.15 — 30 — — 0.01 (2) 2 (4) 10 Max. 1.3 10 — — — 0.1 (10) 50 (50) — Unit V µA pF V V µA µA pF Detector Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V MIn. 50 Rank GB 100 — 30 — — — — Typ. — — 60 — — 0.2 — 1 Max. 600 600 — — 0.4 — 0.4 10 µA V Unit % Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA % Collector-emitter saturation voltage Off-state collector current VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB VF = 0.7V, VCE = 48 V IC (off) Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0V, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. — 1×1012 3750 — — Typ. 0.8 1014 — 10000 10000 Max. — — — — — Unit pF Ω Vrms Vdc 4 2002-09-25 TLP181 Swiching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. — — — — — — — Typ. 2 3 3 3 2 25 40 Max. — — — — — — — µs µs Unit Fig. 1 IF Switching time test circuit VCC VCE IF tS VCE tON 4.5V 0.5V tOFF RL 5 2002-09-25 TLP181 IF – Ta 100 200 PC – Ta Allowable forward current IF (mA) 60 40 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 80 160 120 80 20 40 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100µs Ta = 25°C 100 IF – VF IFP (mA) IF (mA) Forward current -3 -2 -1 0 1000 500 300 10 Pulse forward current 1 100 50 30 0.1 10 3 0.01 85°C 0.001 0 25 °C 0.8 -25°C 10 3 10 3 10 3 10 Duty cycle ratio DR 0.4 1.2 1.6 2 Forward voltage VF (V) ∆VF / ∆Ta – IF -3.2 1000 IFP – VFP IFP (mA) Pulse forward current 500 300 Forward voltage etemperature coefficient ∆VF / ∆Ta (mV / °C) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 100 50 30 10 5 3 1 0.6 Pulse width ≤ 10µs Repetitive frequency = 100Hz Ta = 25°C 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 6 2002-09-25 TLP181 IC – VCE 50 Ta = 25°C 50mA 30 Ta = 25°C IC – VCE 50mA 40mA 30mA 20 20mA (mA) 40 Collector current IC 30 10mA 20 PC (MAX.) IF = 5mA 10 Collector current IC 30mA 20mA 15mA (mA) 10mA 10 5mA 2mA 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – IF Ta = 25°C 100 50 30 10 5 3 Sample B 1 0.5 0.3 0.1 0.1 VCE = 10V VCE = 5V VCE = 0.4V 0.3 0.5 1 3 5 10 30 50 10 1 ICEO – Ta (mA) Collector dark current ID(ICEO) (µA) 10 0 Collector current IC Sample A 10 -1 VCE = 48V 24V 10 -2 10V 5V Forward current IF (mA) 10 -3 10 -4 0 20 40 60 80 100 IC / IF – IF 1000 Ta = 25°C Ambient temperature Ta (°C) 500 Current transfer ratio IC / IF (%) 300 Sample A 100 Sample B 50 30 VCE = 10V VCE = 5V VCE = 0.4V 10 0.1 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) 7 2002-09-25 TLP181 VCE(sat) – Ta 0.24 IF = 1mA IC = 0.2mA 100 IC – Ta VCE = 5V IF = 25mA 10mA 5mA 10 5 3 Collector-emitter saturation voltage VCE(sat) (V) (mA) Collector current IC 0.20 50 30 0.16 0.12 0.08 0.04 1mA 0 -40 1 -20 0 20 40 60 80 100 0.5 0.3 0.5mA Ambient temperature Ta (°C) 0.1 Switching Time – RL 1000 Ta = 25°C IF = 16mA 500 VCC = 5V 300 tOFF 160 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching Time – Ta 50 100 30 tOFF ts Switching time (µs) 50 30 Switching time (µs) ts 10 5 3 tON 1 10 5 0.5 3 0.3 tON 1 1 0.1 3 5 10 30 50 100 IF = 16mA VCC = 5V RL = 1.9kΩ -20 0 20 40 60 80 100 Load resistance RL (kΩ) Ambient temperature Ta (°C) 8 2002-09-25 TLP181 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25