TLP185(GRH-TL,SE

TLP185(SE Photocouplers Infrared LED & Photo Transistor TLP185(SE 1. Applications • Office Equipment • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards 2. General The TLP185(SE consist of a photo transistor optically coupled to an infrared LED. The TLP185(SE photocoupler is housed in the very small and thin SO6 package. Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50% (min) GB Rank: 100% (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 110  (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 2013-01 2019-11-18 Rev.7.0 TLP185(SE 5. Principle of Operation 5.1. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Note Rating Unit 50 mA -1.5 mA/ 1 A IF Input forward current derating (Ta ≥ 90 ) ∆IF/∆Ta Input forward current (pulsed) IFP Input reverse voltage VR 5 V Input power dissipation PD 100 mW ∆PD/∆Ta -2.86 mW/ Tj 125  Detector Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Input power dissipation derating (Ta ≥ 90 ) Junction temperature (Note 1) Collector current IC 50 mA Collector power dissipation PC 150 mW ∆PC/∆Ta -1.5 mW/ Tj 125  Topr -55 to 110  Tstg -55 to 125 Tsol 260 PT 200 mW 3750 Vrms Collector power dissipation derating (Ta ≥ 25 ) Junction temperature Common Operating temperature Storage temperature Lead soldering temperature (10 s) Total power dissipation Isolation voltage AC, 60 s, R.H. ≤ 60% BVS (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 100 µs, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 7. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Note Test Condition Min Typ. Max Unit Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Input reverse current IR VR = 5 V   5 µA Ct V = 0 V, f = 1 MHz  30  pF Detector Collector-emitter breakdown voltage Input capacitance V(BR)CEO IC = 0.5 mA 80   V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7   Dark Current IDARK VCE = 48 V  0.01 0.08 VCE = 48 V, Ta = 85   2 50 Collector-emitter capacitance CCE V = 0 V, f = 1 MHz  10  ©2015-2019 Toshiba Electronic Devices & Storage Corporation 2 µA pF 2019-11-18 Rev.7.0 TLP185(SE 8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Current transfer ratio Saturated current transfer ratio Symbol Note IC/IF (Note 1) IC/IF(sat) Collector-emitter saturation voltage VCE(sat) OFF-state collector current IC(off) Test Condition Min Typ. Max Unit IF = 5 mA, VCE = 5 V 50  600 % IF = 5 mA, VCE = 5 V, GB Rank 100  600 IF = 1 mA, VCE = 0.4 V  60  IF = 1 mA, VCE = 0.4 V, GB Rank 30   IC = 2.4 mA, IF = 8 mA   0.3 IC = 0.2 mA, IF = 1 mA  0.2  IC = 0.2 mA, IF = 1 mA, GB Rank   0.3 VF = 0.7 V, VCE = 48 V  1 10 V µA Note 1: See Table 8.1 for current transfer ratio. Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 ) Current transfer ratio IC/IF Min Current transfer ratio IC/IF Max 50 600 Blank, YE, GR, GB, BL, Y+, G, G+, B Y 50 150 YE, Y+ GR 100 300 GR, G, G+ GB 100 600 GB, GR, BL, G, G+, B BL 200 600 BL, B YH 75 150 Y+ GRL 100 200 G GRH 150 300 G+ BLL 200 400 B Rank Blank Note: Test Condition IF = 5 mA, VCE = 5 V Marking of Classification Unit % Specify both the part number and a rank in this format when ordering. Example: TLP185(GB,SE For safety standard certification, however, specify the part number alone. Example: TLP185(GB,SE: TLP185 9. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Condition Min Typ. Max Unit  0.8  pF Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60% 1012 1014  Ω (Note 1) AC, 60 s 3750   Vrms Isolation voltage BVS Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-18 Rev.7.0 TLP185(SE 10. Switching Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rise time tr Fall time tf Note Test Condition VCC = 10 V, IC = 2 mA, RL = 100 Ω Min Typ. Max Unit  2  µs  3  Turn-on time ton  3  Turn-off time toff  3  Turn-on time ton  0.5  Storage time ts  25  Turn-off time toff  40  See Fig. 10.1 VCC = 5 V, IF = 16 mA, RL = 1.9 kΩ Fig. 10.1 Switching Time Test Circuit and Waveform ©2015-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-18 Rev.7.0 TLP185(SE 11. Characteristics Curves (Note) Fig. 11.1 IF - Ta Fig. 11.2 PC - Ta Fig. 11.3 IFP - DR Fig. 11.4 IF - VF Fig. 11.5 ∆VF/∆Ta - IF Fig. 11.6 IFP - VFP ©2015-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-18 Rev.7.0 TLP185(SE Fig. 11.7 IC - VCE Fig. 11.8 IC - VCE Fig. 11.9 IC - IF Fig. 11.10 IC/IF - IF Fig. 11.11 IDARK - Ta Fig. 11.12 VCE(sat) - Ta ©2015-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-18 Rev.7.0 TLP185(SE Fig. 11.13 IC - Ta Fig. 11.14 Switching Time - RL Fig. 11.15 Switching Time - Ta Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-11-18 Rev.7.0 TLP185(SE 12. Soldering and Storage 12.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 12.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-11-18 Rev.7.0 TLP185(SE Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4M1S ©2015-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-11-18 Rev.7.0 TLP185(SE RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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