TLP190B
TOSHIBA Photocoupler IRED & Photo−Diode Arry
TLP190B
Telecommunications
Programmable Controllers
MOS Gate Drivers
MOSFET Gate Drivers
Unit: mm
The TOSHIBA TLP190B mini-flat photocoupler is suitable for surfacemount assembly.
The TLP190B consists of an infrared emitting diode optically coupled to a
series connected photodiode array which is suitable for MOSFET gate
drivers.
TLP190 : Mini Flat Package, 4Pin, one circuit.
•
Open voltage: 7.0V (min)
•
Short current: 12.0 μA (min)
•
Isolation voltage: 2500 Vrms (min)
•
UL-recognized: UL 1577, File No.E67349
•
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11−4C1
Weight: 0.09 g (typ.)
Short Current
Type
Name
TLP190B
Short Current
Classification
(min)
C20
20 μA
Standard
12 μA
IF
10 mA
Marking of
Classification
Pin Configuration (top view)
20
20, blank
1
6
3
4
Note: Application type name for certification test, please
use standard product type name, i.e.
TLP190B(C20) : TLP190B
1. Anode
3. Cathode
4. Cathode
6. Anode
Start of commercial production
1990-11
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-06-17
TLP190B
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
IF
50
mA
Forward current
derating (Ta ≥ 25°C)
ΔIF /°C
−0.5
mA / °C
Pulse forward current
(100μs pulse 100pps)
IFP
1
A
Reverse voltage
VR
3
V
Diode power dissipation
PD
100
mW
△PD /°C
-1.0
mW/°C
Tj
125
°C
Forward current
IFD
50
μA
Reverse voltage
VRD
10
V
Output power dissipation
PO
0.5
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
Forward current
LED
Diode power dissipation derating
(Ta >25°C)
Junction temperature
Detector
Isolation voltage
(AC, 60 s, R.H. ≤ 60 %)
Note 1
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristics
Forward current
Operating temperature
Symbol
Min
Typ.
Max
Unit
IF
―
20
25
mA
Topr
−25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-06-17
TLP190B
Individual Electrical Characteristics (Ta = 25°C)
LED
Detector
Characteristic
Symbol
Forward voltage
VF
Reverse current
Test Condition
Min
Typ.
Max
Unit
IF = 10 mA
1.2
1.4
1.7
V
IR
VR = 3 V
—
—
10
μA
Capacitance between
terminals
CT
VF = 0 V, f = 1 MHz
—
30
60
pF
Forward voltage
VFD
IFD = 10 μA
―
7
—
V
Reverse current
IRD
VRD = 10 V
―
1
—
nA
Capacitance
(anode to cathode)
CTD
V = 0 V, f = 1 MHz
—
―
—
pF
Min
Typ.
Max
Unit
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Open voltage
VOC
IF = 10 mA
7
8
—
V
Short current
ISC
IF = 10 mA
12
20
—
μA
Min
Typ.
Max
Unit
—
0.8
—
pF
5×1010
1014
—
Ω
2500
—
—
Vrms
Isolation Characteristics (Ta = 25°C)
Characteristics
Symbol
Capacitance input to output
CS
Isolation resistance
RS
Isolation voltage
BVS
Test Condition
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. ≤ 60 %
AC, 60 s
Switching Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Turn−on time
tON
—
0.2
—
ms
Turn−off time
tOFF
IF = 20 mA, RSH = 510 kΩ
(Note 1)
CL = 1000 pF
—
1
—
ms
Note 1: Switching time test circuit
IF
VOUT
RSH
IF
CL
VOUT
0V
RSH: External shunt resistance
© 2019
Toshiba Electronic Devices & Storage Corporation
3
5V
1V
tON
tOFF
2019-06-17
TLP190B
IF – Ta
100
ΔVF /ΔTa – IF
−4.0
Forward voltage temperature
Coefficient ΔVF /ΔTa (mV / °C)
Allowable forward current
IF (mA)
−3.6
80
60
40
20
0
−20
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
20
0
60
40
80
0.1
100
0.3
I F – VF
Ta = 25 °C
(mA)
IFP
Pulse forward current
(mA)
Forward current IF
10
5
3
1.4
1.6
Forward voltage
1.8
VF
2.0
(mA)
Ta = 25 °C
500
300
100
50
30
0.0003
(V)
30
1000
10
2.2
IF
10
Pulse width ≤ 100μs
3000
30
1.2
3
IFP – DR
5000
50
1
1.0
1
Forward current
Ambient temperature Ta (°C)
100
0.5
10−3
0.003
10−2
0.03
10−1
0.3
1
Duty cycle ratio DR
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-06-17
TLP190B
I O – VO
Ta = 25 °C
(ms)
tON, tOFF
20
IF=0mA
5mA
Switching time
Output current IO (μA)
40
0
10mA
−20
15mA
20mA
−40
0
2
6
4
Output voltage
VO
tON
510kΩ
Ta = 25 °C
300kΩ
IF = 20 mA
IF=20mA
RSH
0.3
VOUT
103
300
3000
tON
tOFF
104
CL
(PF)
50
30
(μA)
1MΩ
10
ISC
510kΩ
6
300kΩ
4
2
Ta = 25 °C
3
5
30
10
Forward current
3
1
0.5
0.3
Ta = 25 °C
IF
50
0.1
1
100
3
5
10
Forward current
(mA)
VOC – Ta
30
IF
50
100
(mA)
ISC – Ta
24
10
20
(μA)
12
16
ISC
8
6
Short current
(V)
1V
ISC – IF
100
8
0
1
VOC
5V
0V
2.4MΩ
102
CL
IF
300kΩ
510kΩ
1MΩ
0.1
RSH=2.4MΩ
Open voltage
VOUT
1
Load capacitance
Short current
(V)
VOC
Open voltage
3
(V)
RSH OPEN
tOFF
1MΩ
10
0.01
10
8
VOC – IF
10
RSH=2.4MΩ
30
0.03
25mA
−60
tON, tOFF – CL
100
4
2
0
0
20
40
60
80
Ambient temperature Ta (°C)
100
8
4
IF = 10mA
−20
12
120
0
IF = 10mA
−20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
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2019-06-17
Toshiba Electronic Devices & Storage Corporation
TLP190B
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
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LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
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except in compliance with all applicable export laws and regulations.
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2019-06-17