TLP197D
TOSHIBA Photocoupler Photorelay
TLP197D
PC Card Modems
PBX
Measurement Equipment
Unit: mm
The Toshiba TLP197D consists of an infrared emitting diode optically
coupled to a photo-MOSFET in a SOP package.
TLP197D is housed in a compact and thin SOP package and has
characteristics of high-withstanding voltage and low ON-state resistance,
which enable TLP197D to be applied in hook switches, dial-pulse
switches for modems and facsimiles, and switches for test circuit
switching in PBXs.
•
6-pin SOP (2.54SOP6): Height = 2.1 mm, pitch = 2.54 mm
•
Normally open (1-form-A) device
•
Peak OFF-state voltage: 200 V (min)
•
Trigger LED current: 3 mA (max)
•
ON-state current: 200 mA (max)
•
ON-state resistance: 8 Ω (max)
•
Isolation voltage: 1500 Vrms (min)
•
UL-recognized: UL 1577, File No.E67349
JEDEC
―
•
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
JEITA
―
TOSHIBA
11-7C1
Weight: 0.13 g (typ.)
Pin Configuration (top view)
1
6
1: Anode
2: Cathode
2
5
3
4
4: Drain D1
5: Source
6: Drain D2
Schematic
1
6
2
5
4
Start of commercial production
2002-02
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-06-17
TLP197D
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Forward current
IF
50
mA
−0.5
mA/°C
Peak forward current
(100 μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Diode power dissipation
PD
50
mW
△PD /°C
-0.5
mW/°C
Tj
125
°C
VOFF
200
V
Diode power dissipation derating (Ta≥25°C)
Junction temperature
Off-state output terminal voltage
A connection
200
On-state current B connection
200
ION
C connection
Detector
Unit
∆IF/°C
Forward current derating (Ta≥25°C)
LED
Rating
mA
400
−2.0
A connection
On-state current
B connection
derating
(Ta ≥25°C)
C connection
−2.0
∆ION/°C
mA/°C
−4.0
A connection
Output power
dissipation
PO
300
mW
ΔPO /°C
-3.0
mW /°C
B connection
C connection
Output power
dissipation
derating
(Ta ≥ 25°C)
A connection
B connection
C connection
Tj
125
°C
Operating temperature range
Junction temperature
Topr
−40 to 85
°C
Storage temperature range
Tstg
−55 to 125
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage
(AC, 60 s, R.H. ≤ 60 %)
BVS
1500
Vrms
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Supply voltage
VDD
Forward current
IF
On-state current
Operating temperature
Unit
―
―
160
V
5
7.5
25
mA
ION
―
―
130
mA
Topr
−20
―
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
© 2019
Toshiba Electronic Devices & Storage Corporation
2
2019-06-17
TLP197D
Circuit Connections
1
6
2
5
3
4
LOAD
AC
or
DC
A Connection
© 2019
Toshiba Electronic Devices & Storage Corporation
1
6
2
5
3
4
B Connection
3
LOAD
DC
1
6
2
5
3
4
LOAD
DC
C Connection
2019-06-17
TLP197D
Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
VF = 0 V, f = 1 MHz
30
pF
Off-state current
IOFF
VOFF = 200 V
1
μA
Capacitance
COFF
V = 0 V, f = 1 MHz
100
pF
Min
Typ.
Max
Unit
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Trigger LED current
IFT
ION = 200 mA
1
3
mA
Return LED current
IFC
IOFF = 100 μA
0.1
mA
ION = 200 mA, IF = 5 mA
5
8
ION = 200 mA, IF = 5 mA
3
5
ION = 400 mA, IF = 5 mA
1.4
Test Condition
Min
Typ.
Max
Unit
0.8
pF
5 × 1010
1014
Ω
1500
Vrms
Min
Typ.
Max
Unit
0.6
1.5
ms
0.1
1.0
ms
A connection
On-state resistance
B connection
RON
C connection
Ω
Isolation Characteristics (Ta = 25°C)
Characteristics
Symbol
Capacitance input to output
CS
VS = 0 V, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60 %
Isolation voltage
BVS
AC, 60 s
Switching Characteristics (Ta = 25°C)
Characteristics
Symbol
Turn-on time
tON
Turn-off time
tOFF
Test Condition
RL = 200 Ω
VDD = 20 V, IF = 5 mA
(Note 2)
Note 2: Switching time test circuit
IF
1
6
RL
VDD
IF
2
VOUT
4
VOUT
90%
10%
tON
© 2019
Toshiba Electronic Devices & Storage Corporation
4
tOFF
2019-06-17
TLP197D
IF – Ta
ION – Ta
Allowable forward current
60
40
20
0
−20
500
C connection
ION
80
400
On-state current
(mA)
600
IF
(mA)
100
300
A connection,
B connection
200
100
0
20
40
60
80
100
0
−20
120
0
Ambient temperature Ta (°C)
20
40
80
100
120
Ambient temperature Ta (°C)
I F – VF
ION – VON
100
200
Ta = 25°C, A connection
IF = 5 mA
Ta = 25°C
(mA)
(mA)
30
100
On-state current
ION
10
Forward current IF
60
3
1
0
−100
0.3
0.1
0.6
0.8
1
1.2
Forward voltage
1.4
VF
1.6
−200
−3
1.8
−2
(V)
−1
2
3
(V)
IFT – Ta
5
ION = 200 mA
IF = 5 mA
t
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