TLP197G
TOSHIBA Photocoupler IRED & Photo-MOS FET
TLP197G
Modem
Fax
PBX
Measurement Instrumentation
Unit: mm
The TOSHIBA mini flat photo relay TLP197G is a small outline photo
relay, suitable for surface mount assembly.
The TLP197G consists of an infrared emitting diode optically coupled to a
photo―MOS FET in a six lead 2.1mm height package, which enable
TLP197G to be applied in card modems.
The TLP197G is a bi―directional switch which can replace mechanical
relays in fax machines and modems etc.
SOP 6pin(2.54SOP6):
1−form−A
Peak off−state voltage:
350 V (min)
Trigger LED current:
3 mA (max)
On−state current:
120 mA (max) (A connection)
On−state resistance:
35 Ω (max)
Isolation voltage:
1500 Vrms (min)
UL-recognized:
UL 1577, File No.E67349
cUL-recognized:
CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11-7C1
Weight: 0.13g (typ.)
Pin Configuration (top view)
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Drain D1
5 : Source
6 : Drain D2
Schematic
1
6
2
5
4
Start of commercial production
1996-03
© 2022
Toshiba Electronic Devices & Storage Corporation
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2022-04-12
TLP197G
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Forward current
Rating
Unit
IF
50
mA
IF/°C
−0.5
mA/°C
Pulse forward current (100μs pulse,100pps)
IFP
1
A
Reverse voltage
VR
5
V
Diode power dissipation
PD
50
mW
△PD /°C
-0.5
mW/°C
Tj
125
°C
VOFF
350
V
ION
120
mA
ION/°C
−1.2
mA/°C
PO
300
mW
ΔPO /°C
-3.0
mW /°C
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Led
Forward current derating (Ta ≥ 25°C)
Diode power dissipation derating (Ta >25°C)
Junction temperature
Off−state output terminal voltage
A connection
On−state current
B connection
C connection
A connection
Detector
On−state current derating (Ta ≥ 25°C) B connection
C connection
A connection
Output power dissipation
B connection
C connection
A connection
Output power dissipation derating
(Ta ≥ 25°C)
B connection
C connection
Junction temperature
Lead soldering temperature(10 s)
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 1)
Tsol
260
°C
BVS
1500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two−terminal device: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
―
―
280
V
Forward current
IF
5
7.5
25
mA
On−state current(A connection)
ION
―
―
100
mA
Operating temperature
Topr
−20
―
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2022
Toshiba Electronic Devices & Storage Corporation
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TLP197G
Circuit Connections
1
6
2
5
3
4
LOAD
1
6
LOAD
1
6
LOAD
AC
DC
2
5
DC
2
5
DC
3
4
3
4
or
A Connection
© 2022
Toshiba Electronic Devices & Storage Corporation
B Connection
3
C Connection
2022-04-12
TLP197G
Individual Electrical Characteristics (Ta = 25°C)
Detector
Led
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF =1 0 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
VF = 0 V, f = 1 MHz
30
pF
Off−state current
IOFF
VOFF = 350 V
1
μA
Capacitance
COFF
V = 0 V, f = 1 MHz
40
pF
Min
Typ.
Max
Unit
ION = 120 mA
1
3
mA
ION = 120 mA, IF = 5 mA
22
35
ION = 20 to 120 mA, IF = 5 mA
26
40
Min
Typ.
Max
Unit
0.8
pF
51010
1014
Ω
1500
Vrms
Min
Typ.
Max
Unit
0.3
1
0.1
1
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Trigger LED current
On−state resistance
IFT
A connection
RON
Test Condition
Ω
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Test Condition
VS = 0 V, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60 %
Isolation voltage
BVS
AC, 60 s
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn−n time
tON
Turn−ff time
tOFF
Test Condition
RL = 200 Ω
VCC = 20 V, IF = 5 mA
(Note 2)
ms
Note2: Switching time test circuit
IF
1
6
RL
2
VCC
IF
VOUT
4
VOUT
tON
© 2022
Toshiba Electronic Devices & Storage Corporation
4
10%
90%
tOFF
2022-04-12
TLP197G
IF – Ta
ION – Ta
100
140
120
(mA)
ION
60
On-state current
Allowable forward current
IF (mA)
80
40
20
100
80
60
40
20
0
-20
0
20
60
40
80
100
0
-20
120
20
0
Ambient temperature Ta (°C)
IFP – DR
80
100
IF –VF
100
Pulse width ≤ 100μs
3000
50
Ta = 25°C
Ta = 25°C
(mA)
30
1000
10
500
Forward current IF
Allowable pulse forward current
IFP (mA)
60
Ambient temperature Ta (°C)
5000
300
100
50
30
10
3
40
5
3
1
0.5
0.3
10-3
10-2
3
10-1
3
0.1
0.6
100
3
0.8
Duty cycle ratio DR
1.0
1.2
Forward voltage
ΔVF/ΔTa – IF
1.4
VF
1.6
1.8
2.6
3.0
(V)
IFP – VFP
1000
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
(mA)
-2.4
300
IFP
500
100
Pulse forward current
Forward voltage temperature
coefficient ΔVF/ΔTa (mV/°C)
-2.8
0.3 0.5
1
3
Forward current
5
IF
10
(mA)
30
50
50
30
10
Pulse width ≤ 10μs
5
Repetitive
3
1
0.6
frequency = 100Hz
Ta = 25°C
1.0
1.4
1.8
2.2
Pulse forward voltage V FP
(V)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
TLP197G
IFT – Ta
ION – VON
5
150
A Connection
(mA)
2
1
ION
3
100
50
On-state current
(mA)
IFT
Trigger led current
Ta = 25°C
IF = 5mA
ION = 120mA
4
0
-50
-100
0
-40
-20
0
20
40
60
80
-150
100
-2
300
IOFF (mA)
IF = 5mA
Off-state current
(Ω)
On-state resistance RON
500
20
10
0
20
40
60
80
VOFF = 350V
100
50
30
10
5
3
1
-20
100
0
Ambient temperature Ta (°C)
tON – Ta
100
VDD = 20V
350 RL = 200Ω
IF = 5mA
300
250
turn-off time
600
(μs)
IF = 5mA
tOFF
RL = 200Ω
(μs)
80
60
tOFF – Ta
400
VDD = 20V
Turn-on time tON
40
20
Ambient temperature Ta (°C)
1000
800
(V)
IOFF – Ta
ION = 120mA
-20
2
1000
A Connection
0
-40
1
On-state voltage V ON
RON – Ta
30
0
-1
Ambient temperature Ta (°C)
40
(A connection)
400
200
200
150
100
50
0
-40
-20
0
20
40
60
Ambient temperature Ta (°C)
80
100
0
-40
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2022
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2022-04-12
Toshiba Electronic Devices & Storage Corporation
TLP197G
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
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diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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Toshiba Electronic Devices & Storage Corporation
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