TLP197GA(TP,F)

TLP197GA TOSHIBA Photocoupler Photorelay TLP197GA PBX Telecommunication Modem･FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP197GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP197GA is suitable for replacement of mechanical relays in many applications which require space savings. • 6 pin SOP (2.54SOP6): 2.1 mm high, 2.54 mm pitch • 1-form-A • Peak off-state voltage: 400 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA 1 6 11-7C1 Weight: 0.13 g (typ.) 1: ANODE 2: CATHODE 2 5 3: N.C. 4: DRAIN D1 3 4 5: SOURCE 6: DRAIN D2 Schematic 1 6 2 5 4 Start of commercial production 2001-06 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP197GA Absolute Maximum Ratings (Ta = 25°C) Characteristics LED Forward current Symbol Rating Unit IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 400 V Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage A connection Detector On-state current On-state current derating (Ta ≥ 25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) B connection 120 120 ION C connection 240 A connection −1.2 B connection ∆ION/°C −1.2 432 A connection PO 690 A connection −4.32 ΔPO / °C C connection Junction temperature mW 345 C connection B connection mA/°C −2.4 C connection B connection mA mW /°C -3.45 -6.9 Tj 125 °C Operating temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS 1500 Vrms (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Supply voltage VDD Forward current IF Unit ― ― 320 V 5 7.5 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP197GA Circuit Connections 1 6 2 5 3 4 LOAD AC or DC A Connection © 2019 Toshiba Electronic Devices & Storage Corporation 1 6 2 5 3 4 B Connection 3 LOAD DC 1 6 2 5 3 4 LOAD DC C Connection 2019-06-17 TLP197GA Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT VF = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 400 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  70  pF Min Typ. Max Unit ION = 120 mA  1 3 mA mA Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Trigger LED current IFT Return LED current IFC A connection On-state resistance B connection RON C connection Test Condition IOFF = 100 µA 0.1   ION = 120 mA, IF = 5 mA  17 35 ION = 120 mA, IF = 5 mA  11 20 ION = 240 mA, IF = 5 mA  6  Test Condition Min Typ. Max Unit  0.8  pF 5 × 1010 1014  Ω 1500   Vrms Min Typ. Max Unit  0.3 1 ms  0.1 1 ms Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) Note 2: Switching time test circuit IF 1 6 RL VDD IF 2 VOUT 4 VOUT 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 90% tOFF 2019-06-17 TLP197GA IF – Ta ION – Ta 280 (mA) 80 ION 60 On-state current Allowable forward current C connection 240 IF (mA) 100 40 20 200 160 A connection, B connection 120 80 40 0 −20 0 20 40 60 80 100 0 −20 120 0 Ambient temperature Ta (°C) 20 40 50 Ta = 25°C Ta = 25°C, A connection (mA) IF = 5 mA 100 ION On-state current (mA) Forward current IF 5 3 1 0.5 0.3 0.8 1 1.2 Forward voltage 1.4 VF 1.6 0 −100 −200 −3 1.8 −2 (V) 2 3 (V) IFT – Ta 5 ION = 120 mA ION = 120 mA t