TLP199D(F)

TLP199D TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP199D MEASUREMENT INSTRUMENTS Unit: mm The TOSHIBA TLP199D consists of an infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments. Features • 6 pin SOP (2.54SOP6) • 1-Form-A : 2.1 mm high, 2.54 mm pitch • Peak Off-State Voltage : 200 V (min) • Trigger LED Current : 3 mA (max) • On-State Current : 50 mA (max) • On-State Resistance : 50 Ω (max) • Output Capacitance : 20 pF (max) • Isolation Voltage : 1500 Vrms (min) • UL-recognized : UL 1577, File No.E67349 • cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 JEDEC JEITA TOSHIBA 11-7C1 Weight: 0.13 g (typ.) Pin Configuration (Top View) 1 6 2 5 3 4 1 : ANODE 2 : CATHODE 3 : N.C. 4 : DRAIN D1 5 : SOURCE 6 : DRAIN D2 Schematic 1 6 2 5 4 Start of commercial production 2008-10 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP199D Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Forward Current LED Forward Current Derating (Ta ≥ 25°C) Rating IF 50 mA ΔIF/°C -0.5 mA/°C Reverse Voltage VR 5 V Diode Power Dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Diode Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature Off-State Output Terminal Voltage Tj 125 °C VOFF 200 V ION 50 A Connection On-State Current DETECTOR Unit On-State Current Derating (Ta ≥ 25°C) Output Power Dissipation 50 B Connection C Connection 100 A Connection -0.5 B Connection -0.5 ΔION/°C C Connection -1.0 A Connection 125 PO B Connection (Ta ≥ 25°C) mA/°C mW 52.5 C Connection Output Power Dissipation Derating mA 105 A Connection -1.25 B Connection -0.525 ΔPO /°C C Connection mW / °C -1.05 Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55 to 125 °C Operating Temperature Range Topr -40 to 85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 1500 Vrms Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins are shorted together, and DETECTOR side pins are shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL Min Typ. Max UNIT Supply Voltage VDD ― ― 160 V Forward Current IF 5 7.5 15 mA On-State Current ION ― ― 50 mA Operating Temperature Topr -20 ― 60 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP199D Circuit Connections 1 6 LOAD 1 6 2 5 AC or DC 2 5 3 4 3 4 A Connection © 2019 Toshiba Electronic Devices & Storage Corporation LOAD B Connection 3 DC 1 6 2 5 3 4 LOAD DC C Connection 2019-06-17 TLP199D Electrical Characteristics (Ta = 25°C) DETECTOR LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF Off-State Current IOFF VOFF = 160 V ― ― 1 nA Capacitance COFF V = 0 V, f = 1 MHz ― 15 20 pF Min Typ. Max Unir Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED Current IFT ION = 50 mA ― 1 3 mA Return LED Current IFC IOFF = 100 μA 0.1 ― ― mA A Connection On-State Resistance RON B Connection C Connection ION = 50 mA, IF = 5 mA ― 40 50 ION = 50 mA, IF = 5 mA ― 30 40 ION = 100 mA, IF = 5 mA ― 15 ― Min Typ. Max Unit ― 0.8 ― pF 1014 ― Ω 1500 ― ― Vrms Min Typ. Max Unit ― ― 0.5 ― ― 0.2 Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance Input to Output CS Test Condition VS = 0 V, f = 1 MHz Isolation Resistance RS VS = 500 V, R.H. ≤ 60 % Isolation Voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on Time tON Turn-off Time tOFF Test Condition RL = 200 Ω VDD = 10 V, IF = 5 mA (Note 2) ms Note 2: SWITCHING TIME TEST CIRCUIT IF 1 6 RL VDD IF 2 VOUT VOUT 4 90% 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 tOFF 2019-06-17 TLP199D RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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