TLP206G

TLP206G TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET TLP206G PBX Modem･FAX Card Measurement Instrument Unit in mm The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a 8 pin SOP. The TLP206G is a 2−Form−A switch which is suitable for replacement of mechanical relays in many application. • • • • • • • • • • SOP 8 pin (2.54SOP8): 2−Form−A Peak off−state voltage: 350V(min) Trigger LED current: 3mA(max) On−state current: 120mA(max) On−state resistance: 35Ω(max) Isolation voltage: 1500Vrms(min) UL recognized: UL1577, file no.E67349 BSI approved: BS EN60065: 2002, certificate no.8753 BS EN60950-1: 2002, certificate no.8754 SEMKO approved: SS EN60065 SS EN60950 Option(V4)type TUV approved: DIN EN 60747-5-2, certificate No. 40009351 JEDEC EIAJ TOSHIBA Weight: 0.2 g ― ― Schematic 2-Form-A 1, 3 6, 8 8 7 6 5 Pin Configuration (top view) 1 8 2 7 1 2, 4 5, 7 2 3 4 3 6 4 1, 3: Anode 2, 4: Cathpde 5: Drain D1 6: Drain D2 7: Drain D3 8: Drain D4 5 1 2007-10-01 TLP206G Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 25°C) LED Pulse forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Off−state output terminal voltage Detector On−state current On−state RMS current derating(Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 2) Both channel One channel Both channel One channel (Note 1) (Note 1) Symbol IF ΔIF / °C IFP VR Tj VOFF ION Rating 50 −0.5 1 5 125 350 100 120 −1.0 −1.2 125 −55~125 −40~85 260 1500 Unit mA mA / °C A V °C V mA ΔION / °C Tj Tstg Topr Tsol BVS mA / °C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two−terminal device: Pins1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On−state current Operating temperature Symbol VDD IF ION Topr Min. ― 5 ― −20 Typ. ― 7.5 ― ― Max. 280 25 100 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP206G Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off−state current Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V V = 0,f = 1MHZ Min. 1.0 — — — — Typ. 1.15 — 30 — 40 Max. 1.3 10 — 1 — Unit V μA pF μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current On−state resistance Symbol IFT RON Test Condition ION = 120 mA ION = 120 mA, IF = 5 mA MIn. — — Typ. 1 22 Max. 3 35 Unit mA Ω Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. — 5×10 10 Typ. 0.8 10 14 Max. — — — — — Unit pF Ω Vrms Vdc 1500 — — — 3000 3000 Switching Characteristics (Ta = 25°C) Characteristic Turn−on time Turn−off time Symbol tON tOFF Test Condition RL = 200Ω VDD = 20 V, IF = 5 mA (Note 3) Min. — — Typ. 0.3 0.1 Max. 1 1 Unit ms (Note 3): Switching time test circuit IF 1, 3 6, 8 RL VDD VOUT 90% 10% tOFF IF 2, 4 5, 7 VOUT tON 3 2007-10-01 TLP206G IF – Ta 100 140 ION – Ta Allowable MOSFET on-state current ION(RMS) (mA) 120 100 80 60 40 20 0 －20 Allowable forward current IF (mA) 80 60 40 20 0 －20 0 20 40 60 80 100 120 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 5000 3000 Pulse width ≤ 100μs Ta = 25°C 1000 500 300 100 50 30 Ta = 25°C IF – V F Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF －3 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 10 3 10－ 2 3 10－ 1 3 10 0 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ΔVF / ΔTa – IF 1000 －2.8 500 300 IFP – VFP －2.4 －2.0 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 50 30 －1.6 －1.2 10 5 3 0 0.6 Pulse width ≤ 10μs Repetitive frequency = 100Hz Ta = 25°C －0.8 －0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP206G IFT – Ta 5 ION = 120mA 150 Ta = 25°C IF = 5mA 100 ION – VON (mA) MOSFET on-state current ION Relative trigger LED current IFT / IFT (Ta = 25°C) 4 50 3 0 2 －50 1 －100 0 －40 －20 0 20 40 60 80 100 －150 －2.5 －1.5 －0.5 0.5 1.5 2.5 Ambient temperature Ta (°C) MOSFET on-state voltage VON (V) RON – Ta 40 1000 IOFF – Ta (mA) VOFF = 350V 500 300 100 (Ω) ION = 120mA IF = 5mA 30 MOSFET on-state resistance RON MOSFET off-state current ION 50 30 10 5 3 1 －20 20 10 0 －40 －20 0 20 40 60 80 100 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) tON – Ta 1000 VDD = 20V RL = 200Ω 800 400 tOFF – Ta VDD = 20V RL = 200Ω IF = 5ｍA 300 (ms) 600 Turn-off time tOFF －20 0 20 40 60 80 100 Turn-on time tON (ms) IF = 5ｍA 200 400 200 100 0 －40 0 －40 －20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 5 2007-10-01 TLP206G RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01