TLP2108
Photocouplers
Infrared LED & Photo IC
TLP2108
1. Applications
•
Programmable Logic Controllers (PLCs)
•
Battery Management System (BMS)
•
Industrial Inverters
2. General
The Toshiba TLP2108 consists of an infrared LED coupled with a high-gain, high-speed photo detector. It has
two circuits built into a single SO8 package, which can reduce the mounting area.
The detector has a totem-pole output stage with current sourcing and sinking capabilities. TLP2108 has an
internal Faraday shield that provides a guaranteed common-mode transient immunity of ±10 kV/µs. The TLP2108
has a inverter output. An buffer output version, the TLP2105, is also available.
3. Features
(1)
Inverter logic type (totem pole output)
(2)
Supply voltage: 4.5 to 20 V
(3)
Threshold input current: 1.6 mA (max)
(4)
Propagation delay time (tpLH/tpHL): 250 ns (max)
(5)
Common-mode transient immunity: ±10 kV/µs (min)
(6)
Operating temperature range: -40 to 100
(7)
Isolation voltage: 2500 Vrms (min)
(8)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
4. Packaging and Pin Assignment
1: Anode 1
2: Cathode 1
3: Cathode 2
4: Anode 2
5: GND
6: VO2 (Output 2)
7: VO1 (Output 1)
8: VCC
11-5K1S
Start of commercial production
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
2008-07
2019-11-21
Rev.3.0
TLP2108
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 8 and pin 5.
6. Principle of Operation
6.1. Truth Table
Input
LED1(2)
Tr1(3)
Tr2(4)
Output1(2)
H
ON
OFF
ON
L
L
OFF
ON
OFF
H
6.2. Mechanical Parameters
Characteristics
Dimension(Min)
Unit
Creepage distances
4.2
mm
Clearance distances
4.2
Internal isolation thickness
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Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
7. Absolute Maximum Ratings (Note)
(Unless otherwise specified, Ta = 25 )
Characteristics
LED
Input forward current
Symbol
Note
Rating
Unit
IF
(Note 1)
20
mA
∆IF/∆Ta
(Note 1)
-0.4
mA/
Peak transient input forward
current
IFPT
(Note 1),
(Note 2)
1
A
Input reverse voltage
VR
(Note 1)
5
V
Input power dissipation
PD
(Note 1)
40
mW
(Ta ≥ 75 )
∆PD/∆Ta
(Note 1)
-0.8
mW/
Detector Output current
(Ta ≤ 25 )
IO
(Note 1)
25 / -15
mA
Output current
(Ta = 100 )
IO
(Note 1)
5 / -5
mA
Output voltage
VO
(Note 1)
-0.5 to 20
V
Supply voltage
VCC
-0.5 to 20
V
Input forward current derating
(Ta ≥ 75 )
Input power dissipation
derating
Output power dissipation
Output power dissipation
derating
(Ta ≥ 25 )
Common Operating temperature
Storage temperature
(Note 1)
75
mW
(Note 1)
-0.75
mW/
Topr
-40 to 100
Tstg
-55 to 125
(10 s)
Tsol
260
(AC, 60 s, R.H. ≤ 60 % )
BVS
Lead soldering temperature
Isolation voltage
PO
∆PO/∆Ta
(Note 3)
2500
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Each channel
Note 2: Pulse width (Pw)≤1 µs, 300 pps
Note 3: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol
Note
Min
Typ.
Max
Unit
Input on-state current
IF(ON)
(Note 1)
2
Input off-state voltage
VF(OFF)
(Note 1)
0
10
mA
0.8
V
Supply voltage
VCC
(Note 2)
4.5
20
V
Operating temperature
Topr
-40
100
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note 1: Each channel
Note 2: Denotes the operating range, not the recommended operating condition.
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Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
9. Electrical Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 100 , VCC = 4.5 to 20 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Symbol
Note
VF
(Note 1)
Test
Circuit
∆VF/∆Ta (Note 1)
IR
(Note 1)
Test Condition
Min
Typ.
Max
Unit
IF = 10 mA, Ta = 25
1.3
1.65
1.75
V
IF = 10 mA
-2.0
mV/
VR = 5 V, Ta = 25
10
µA
V = 0 V, f = 1 MHz , Ta = 25
Ct
(Note 1)
45
pF
Low-level output voltage
VOL
(Note 1)
Fig. IOL = 3.5 mA, IF = 5 mA
12.1.1
0.2
0.6
V
High-level output voltage
VOH
(Note 1)
Fig. IOH = -2.6 mA, VF = 0.8 V,
12.1.2 VCC = 4.5 V
2.7
4.0
V
IOH = -2.6 mA, VF = 0.8 V,
VCC = 20 V
17.4
18.1
Low-level supply current
ICCL
Fig. IF1 = IF2 = 5 mA, VCC = 5.5 V
12.1.3 I = I = 5 mA, V = 20 V
F1
F2
CC
6
6
High-level supply current
ICCH
Fig. VF = 0 V, VCC = 5.5 V
12.1.4 V = 0 V, V = 20 V
F
CC
6
6
Low-level short-circuit output
current
IOSL
(Note 1),
Fig. IF = 5 mA, VCC = VO = 5.5 V
(Note 2) 12.1.5
IF = 5 mA, VCC = VO = 20 V
15
80
20
90
High-level short-circuit output
current
IOSH
(Note 1),
Fig. VF = 0 V, VO = GND,
(Note 2) 12.1.6 VCC = 5.5 V
-5
-15
VF = 0 V, VO = GND,
VCC = 20 V
-10
-20
mA
mA
mA
mA
Threshold input current (H/L)
IFHL
(Note 1)
IO = 3.5 mA, VO < 0.6 V
0.4
1.6
mA
Threshold input voltage (L/H)
VFLH
(Note 1)
IO = -2.6 mA, VO > 2.4 V
0.8
V
Input current hysteresis
IHYS
VCC = 5 V
0.05
mA
Note: All typical values are at VCC = 5 V, Ta = 25 , unless otherwise noted
Note 1: Each channel
Note 2: Duration of output short circuit time should not exceed 10 ms.
10. Isolation Characteristics
(Unless otherwise specified, Ta = 25 )
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
0.8
pF
CS
(Note 1) VS = 0 V, f = 1 MHz
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
1012
1014
Ω
(Note 1) AC, 60 s
2500
Vrms
BVS
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
11. Switching Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 100 , VCC = 4.5 to 20 V)
Characteristics
Symbol
Note
Test Circuit
Test Condition
Min
Typ.
Max
Unit
ns
Propagation delay time
(L/H)
tpLH
Fig. 12.1.7, IF = 3 → 0 mA
Fig. 12.1.8
30
150
250
Propagation delay time
(H/L)
tpHL
IF = 0 → 3 mA
30
150
250
220
30
75
30
75
±10
Pulse width distortion
Rise time
Fall time
|tpHL-tpLH|
tr
tf
Fig. 12.1.7, IF = 3 → 0 mA, VCC = 5 V
Fig. 12.1.8 I = 0 → 3 mA, V = 5 V
F
CC
High-level commonmode transient immunity
CMH
Fig. 12.1.9 VCM = 1000 Vp-p, IF = 0 mA,
VCC = 20 V, Ta = 25
Low-level commonmode transient immunity
CML
VCM = 1000 Vp-p, IF = 5 mA,
VCC = 20 V, Ta = 25
Note:
Note:
Note:
ns
kV/µs
All typical values are at VCC = 5 V, Ta = 25 .
Each channel
A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
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2019-11-21
Rev.3.0
TLP2108
12. Test Circuits
12.1. Test Circuits
Fig. 12.1.1 VOL Test Circuit
Fig. 12.1.2 VOH Test Circuit
Fig. 12.1.3 ICCL Test Circuit
Fig. 12.1.4 ICCH Test Circuit
Fig. 12.1.5 IOSL Test Circuit
Fig. 12.1.6 IOSH Test Circuit
Fig. 12.1.7 Switching Time Test Circuit and Waveform
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TLP2108
Fig. 12.1.8 Switching Time Test Circuit and Waveform
Fig. 12.1.9 Common-Mode Transient Immunity and Waveform
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Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
13. Soldering and Storage
13.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
An Example of a Temperature Profile When Lead(Pb)-free Solder Is Used
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
13.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
14. Land Pattern Dimensions (for reference only)
(Unit: mm)
15. Marking
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2019-11-21
Rev.3.0
TLP2108
16. EN 60747-5-5 Option (V4) Specification
•
The following part naming conventions are used for the devices that have been qualified according to
option (V4) of EN 60747.
Example: TLP2108(V4-TP,F)
V4: EN 60747 option
TP: Tape type
F: [[G]]/RoHS COMPATIBLE (Note 1)
Note:
Use TOSHIBA standard type number for safety standard application.
e.g., TLP2108(V4-TP,F) → TLP2108
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 16.1 EN 60747 Isolation Characteristics
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TLP2108
Fig. 16.2 Insulation Related Specifications (Note)
Note:
This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 16.3 Marking on Packing
Fig. 16.4 Marking Example (Note)
Note:
A different marking is used for photocouplers that have been qualified according to option (V4) of EN 60747.
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2019-11-21
Rev.3.0
TLP2108
Fig. 16.5 Measurement Procedure
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Rev.3.0
TLP2108
17. Ordering Information
When placing an order, please specify the part number, tape type and quantity as shown in the following example.
Example) TLP2108(TP,F) 2500 pcs
Part number: TLP2108
Tape type: TP
[[G]]/RoHS COMPATIBLE: F (Note 1)
Quantity (must be a multiple of 2500): 2500 pcs
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-11-21
Rev.3.0
TLP2108
Package Dimensions
Unit: mm
Weight: 0.11 g (typ.)
Package Name(s)
TOSHIBA: 11-5K1S
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2019-11-21
Rev.3.0
TLP2108
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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