TLP2116(TP,F)

TLP2116 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP2116 ○ Plasma Display Panels (PDP) ○ High-Speed Interfaces ○ Factory Automation (FA) Unit: mm The TOSHIBA TLP2116 dual photocoupler consists of a pair of an infrared emitting diodes optically coupled to integrated high gain and high-speed photodetectors.           Inverter logic (totem-pole output) Package: SO8 Guaranteed performance over temperature : -40 to 100°C Power supply voltage: 4.5 to 5.5 V Input thresholds current: IFHL = 5 mA (max) Propagation delay time (tpHL/tpLH): 75 ns (max) Switching speed: 15 MBd (typ.) (NRZ) Common mode transient immunity: ±10 kV/μs Isolation voltage: 2500 Vrms UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A JEDEC ― JEITA ― TOSHIBA 11−5K1S Weight: 0.11 g (typ.) File No.E67349  VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, Please designate the Option(V4). Pin Configuration (Top View) Truth Table Input H L LED1(2) ON OFF Tr1(3) OFF ON Tr2(4) ON OFF Output 1(2) L H Schematic ICC 1 VCC 2 3 8 VCC IF1 4 GND SHIELD 8 1:ANODE 1 2:CATHODE 1 3:CATHODE 2 7 4:ANODE 2 5:GND 6 6:VO2(Output2) 7:VO1(Output1) 5 8:VCC Tr1 1＋ IO1 7 VO1 2－ Tr2 SHIELD Tr3 3－ IO2 VF2 4＋ Tr4 IF2 SHIELD 6 VO2 5 GND Start of commercial production A bypass capacitor of 0.1 µF must be connected between pins 8 and 5. © 2019 Toshiba Electronic Devices & Storage Corporation 2008-02 1 2019-06-03 TLP2116 Absolute Maximum Ratings (Ta=25°C) Characteristic Forward current Rating Unit IF 20 mA ⊿IF/⊿Ta -0.5 mA/°C IFPT 1 A (Each Channel) VR 5 V (Each Channel) PD 40 mW △PD/°C -1.0 mW/°C IO 10 mA VO 6 V VCC 6 V PO 40 mW △PO/°C -1.0 mW/°C Topr -40 to 100 °C Tstg -55 to 125 °C (Each Channel) (Ta ≥ 85°C) (Each Channel) Forward current derating Peak transient forward current LED Symbol (Each Channel) (Note 1) Reverse voltage Input Power Dissipation Input Power Dissipation Derating (Each Channel) (Ta≥85°C) DETECTOR Output current (Each Channel) Output voltage (Each Channel) Supply voltage Output power dissipation (Each Channel) Output Power Dissipation Derating (Ta ≥ 85°C) (Each Channel) Operating temperature range Storage temperature range Lead solder temperature Isolation voltage (AC,60 s, R.H. ≤ 60 %,) (10 s) Tsol 260 °C (Note 2) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps. Note 2: This device is regarded as a two terminal device: pins 1, 2, 3 and 4 are shorted together, as are pins 5, 6, 7 and 8. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit 8 － 18 mA Input current, ON (Each Channel) IF(ON) Input voltage, OFF (Each Channel) VF(OFF) 0 － 0.8 V VCC 4.5 5.0 5.5 V Topr -40 － 100 °C Supply voltage(*) (Note 3) Operating temperature (*) This item denotes operating ranges, not meaning of recommended operating conditions. Note 3: The detector of this product requires power supply voltage (VCC) of 4.5 V or higher for stable operation. If the VCC is lower than this value, ICCH may increase, or output may be unstable. Be sure to use the product after checking the supply current, and the operation of a power-on/-off. Note: A ceramic capacitor (0.1 μF) should be connected from pin 8 (VCC) to pin 5 (GND) to stabilize the operation of the high gain linear amplifier. Failure to provide the bypass may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-03 TLP2116 Electrical Characteristics (Unless otherwise specified, Ta = -40 to 100°C, VCC = 4.5 to 5.5V) Characteristic Min Typ. Max Unit 1.3 1.65 1.75 V (Each Channel) ⊿VF/⊿Ta IF = 10 mA － -2.0 － mV/°C Input reverse current (Each Channel) IR VR = 5 V, Ta = 25 °C － － 10 μA Input capacitance (Each Channel) CT V = 0 V, f = 1 MHz, Ta = 25 °C － 45 － pF Logic low output voltage (Each Channel) VOL IOL = 1.6 mA, IF = 12 mA, VCC = 5 V － － 0.4 V Logic high output voltage (Each Channel) VOH IOH = -0.02 mA, VF = 1.05 V VCC = 5 V 4.0 － － V Logic low supply current ICCL IF = 12 mA － － 10.0 mA Logic high supply current ICCH VF = 0 V － － 10.0 mA (Each Channel) IFHL IO =1.6 mA, VO < 0.4 V － － 5 mA (Each Channel) VFLH IO = -0.02 mA, VO > 4.0 V 0.8 － － V Input forward voltage Temperature coefficient of forward voltage Input current logic low output Input voltage logic high output Symbol (Each Channel) VF Conditions IF = 10 mA, Ta = 25 °C (Note 3) *All typical values are at Ta=25°C, VCC=5 V unless otherwise specified Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Isolation voltage Symbol Test Conditions Min Typ. Max Unit (Note 2) ― 0.8 ― pF 1014 ― Ω ― ― Vrms CS VS = 0 V, f = 1 MHz RS R.H. ≤ 60 %, VS = 500 V (Note 2) 1×1012 AC, 60 s (Note 2) 2500 BVS © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-03 TLP2116 Switching Characteristics (Unless otherwise specified, Ta = -40 to 100°C, VCC = 4.5 to 5.5V)(Each Channel) Characteristic Symbol Propagation delay time 1 Propagation delay time to logic high output Propagation delay time to logic low output tpLH IF = 12→0 mA tpHL VIN = 0→5 V (IF = 0→8 mA) 2 Propagation delay time VIN = 5→0 V (IF = 8→0 mA) tpLH to logic high output between ON and OFF Conditions IF = 0→12 mA tpHL to logic low output Switching time dispersion Test Circuit 1 Output fall time (90 - 10%) tf IF = 0→12 mA Output rise time (10 - 90%) tr IF = 12→0 mA immunity at high level output Common mode transient immunity at low level output RIN =100 Ω CL =15 pF (Note 5) VCM =1000 Vp-p , IF = 0 mA, CMH 3 CML RIN = 430 Ω CIN = 27 pF CL = 15 pF (Note 5) IF = 12 mA, RIN =100 Ω, CL =15 pF (Note 5) |tpHL - tpLH| Common mode transient RIN = 100 Ω CL = 15 pF (Note 5) VO (min) = 4 V , Ta = 25 °C VCM = 1000 Vp-p , IF = 12 mA, VO (max) = 0.4 V , Ta = 25 °C Min Typ. Max Unit － － 75 ns － － 75 ns － － 75 ns － － 75 ns － － 30 ns — 15 — ns — 15 — ns 10000 － － V/μs -10000 － － V/μs *All typical values are at Ta = 25 °C Note 5: CL is approximately 15 pF which includes probe and Jig/stray wiring capacitance. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-03 TLP2116 Test Circuit 1: Switching Time Test Circuit IF=12 mA (P.G) (f=5 MHz, duty=50%, less than tr = tf= 5 ns) 1 VCC IF monitor 8 7 2 VO monitor tf VO 0.1 µF tr GND 4 VOH 90% 6 3 CL = 15 pF 50% IF VCC 5 CL = 15 pF SHIELD 1.5 V VOL 10% RIN = 100 Ω tpLH tpHL CL is capacitance of the probe and JIG. (P.G): Pulse Generator Test Circuit 2: Switching Time Test Circuit VIN=5V (P.G) (f=5 MHz, duty=50%, less than tr = tf= 5 ns) VIN monitor 1 VCC CL = 15 pF 8 7 2 tf VO 0.1 µF tr VOH 90% 6 3 VCC GND 4 CIN = 27 pF 50% IF VO monitor 5 CL=15pF SHIELD 1.5 V VOL 10% RIN=430 Ω tpLH tpHL CL is capacitance of the probe and JIG. (P.G): Pulse Generator Test Circuit 3: Common-Mode Transient Immunity Test Circuit 90% IF → SW A B VCM 8 1 VCC 7 2 4 GND tf 10% ・SW B: IF=0mA Vo 4V VO 5 0.4V CML ・SW A: IF=12mA － VCＭ © 2019 Toshiba Electronic Devices & Storage Corporation CMH VCC SHIELD ＋ tr 1000Ｖ 0.1μF 6 3 10% 90% CMH＝ 5 800(V) tr(μs) CML＝- 800(V) tf(μs) 2019-06-03 TLP2116 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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