TLP222A-2(F)

TOSHIBA Photocoupler Photorelay TLP222A,TLP222A-2 TLP222A, TLP222A-2 Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment Unit: mm TLP222A The Toshiba TLP222A and TLP222A-2 consist of an infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. These photorelays have higher output current rating than phototransistor-type photocoupler; hence, they are suitable for use as On/Off control for high current. • Normally open (1-form-A and 2-form-A) devices • Peak off-state voltage: 60 V (min) • Trigger LED current: 3 mA (max) • On-state current: 500 mA (max) • On-state resistance: 2 Ω (max) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11-5B2S Weight: 0.26 g (typ.) TLP222A-2 Pin Configuration (top view) TLP222A 1 TLP222A-2 4 2 1 8 2 7 3 6 4 5 3 1: Anode 2: Cathode 3: Drain 4: Drain 1, 3 2, 4 5 6 7 8 : Anode : Cathode : Drain D1 : Drain D2 : Drain D3 : Drain D4 TOSHIBA 11-10C4S Weight: 0.54 g (typ.) Start of commercial production 2002-03 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP222A,TLP222A-2 Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating IF 50 mA ∆IF/°C −0.5 mA/°C Forward current Forward current derating (Ta ≥ 25°C) LED Unit Peak forward current IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 60 V ION 500 mA ∆ION/°C −5.0 mA/°C PO 400 mW ΔPO / °C −4.0 mW / °C Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage TLP222A On-state current TLP222A-2 One channel operation Two channel operations TLP222A Detector Forward One channel current operation derating TLP222A-2 (Ta ≥ 25°C) Two channel operations Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Tj 125 °C Storage temperature Junction temperature Tstg −55 to 125 °C Operating temperature Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Symbol Min Typ. Max Supply voltage Characteristics VDD ― ― 48 Unit V Forward current IF 5 7.5 25 mA On-state current ION ― ― 500 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT VF = 0 V, f = 1 MHz  30  pF Forward voltage LED Detector Test Condition Off-state current IOFF VOFF = 60 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  130  pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP222A,TLP222A-2 Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 500 mA  1.6 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA On-state resistance RON ION = 500 mA, IF= 5 mA  1 2 Ω Min Typ. Max Unit  0.8  pF 1014  Ω 2500   Vrms Min Typ. Max Unit  0.8 2  0.1 0.5 Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Test Condition VS = 0 V, f = 1 MHz CS Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 TLP222A 4 VDD RL IF VOUT 3 2 VOUT 10% tON IF 1 TLP222A-2 8 90% tOFF VDD RL VOUT 2 7 © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP222A,TLP222A-2 IF – Ta ION – Ta (mA) 600 ION 80 Allowable On-sate current Allowable forward current IF (mA) 100 60 40 20 0 −20 0 20 40 60 80 100 500 400 300 200 100 0 −20 120 0 20 Ambient temperature Ta (°C) 40 I F – VF (mA) ION 10 On-state current Forward current IF (mA) 30 3 1 0.3 1.2 Forward voltage 1.4 VF 1.6 400 200 0 −200 −400 −600 −0.6 1.8 −0.4 (V) −0.2 RON – Ta 0.2 0.4 0.6 80 100 (V) IFT – Ta 5 ION = 500 mA ION = 500 mA (mA) IF = 5 mA t