TLP222G-2(F)

TLP222G,TLP222G-2 TOSHIBA Photocoupler Photorelay TLP222G, TLP222G-2 Cordless Telephones PBX Modems Unit: mm The Toshiba TLP222G series consist of an infrared emitting diode optically coupled to a photo-MOSFET in a DIP package. The TLP222G series are a bi-directional switch, which can replace mechanical relays in many applications. • TLP222G: 4-pin DIP (DIP4), 1-channel type (1-form-A) • TLP222G-2: 8-pin DIP (DIP8), 2-channel type (2-form-A) • Peak Off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 35 Ω (max, t < 1 s) • On-state resistance: 50 Ω (max, continuous) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11-5B2S Weight: 0.26 g (typ.) File No.E67349 Pin Configuration (top view) TLP222G 1 TLP222G-2 4 2 1 8 2 7 3 6 4 5 3 1: Anode 2: Cathode 3: Drain 4: Drain TOSHIBA 11-10C4S Weight: 0.54 g (typ.) 1, 3 2, 4 5 6 7 8 : Anode : Cathode : Drain D1 : Drain D2 : Drain D3 : Drain D4 Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2001-12 2019-06-17 TLP222G,TLP222G-2 Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating IF 50 mA ∆IF/°C −0.5 mA/°C Forward current Forward current derating (Ta ≥ 25°C) Peak forward current LED (100 μs pulse, 100 pps) Unit IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 120 mA ∆ION/°C −1.2 mA/°C PO 450 mW ΔPO / °C −4.5 mW / °C Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage TLP222G On-state current TLP222G-2 One channel operation Two channel operations TLP222G Detector On-state One channel current operation derating TLP222G-2 (Ta ≥ 25°C) Two channel operations Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Tj 125 °C Storage temperature range Junction temperature Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit VDD ― ― 280 V Supply voltage Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics LED Detector Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT VF = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 350 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  30  pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP222G,TLP222G-2 Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 120 mA  1 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA ION = 120 mA, IF = 5 mA, t < 1 s  25 35 On-state resistance RON ION = 120 mA, IF = 5 mA, continuous (Note)  35 50 Min Typ. Max Unit  0.8  pF 1014  Ω 2500   Vrms Min Typ. Max Unit  0.3 1  0.1 1 Ω Note : Continuous means a state of thermally saturated. Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Test Condition VS = 0 V, f = 1 MHz CS Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time Note : tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note) ms Switching time test circuit IF 1 TLP222G 4 RL VDD IF VOUT 3 2 VOUT 10% tON IF 1 TLP222G-2 8 RL 90% tOFF VDD VOUT 2 7 © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP222G,TLP222G-2 IF – Ta ION – Ta (mA) 240 ION 80 Allowable On-sate current Allowable forward current IF (mA) 100 60 40 20 0 −20 0 20 40 60 80 100 200 160 120 80 40 0 −20 120 0 20 Ambient temperature Ta (°C) 40 I F – VF (mA) 3 1 0.3 0.8 1 1.2 Forward voltage Ta = 25°C IF = 5 mA 100 1.4 VF 1.6 0 −100 −200 −4 1.8 −3 −2 (V) −1 2 3 4 (V) IFT – Ta IFT (mA) ION = 120 mA 30 Trigger LED current (Ω) On-state resistance RON 1 5 ION = 120 mA IF = 5 mA t