TLP224G,TLP224G-2
TOSHIBA Photocoupler Photorelay
TLP224G, TLP224G-2
Modems
PBX
Telecommunications
Unit: mm
TLP224G
The TOSHIBA TLP224G series consists of an infrared emitting diode
optically coupled to a photo-MOSFET in a 4 pin DIP (DIP4), which is
suitable for equipment for high tech communications, including modems.
The TLP224G series complies with FCC part 68 rules with current
limiting function.
•
TLP224G: 4 pin DIP, 1 channel type (1 form A)
•
TLP224G-2: 8 pin DIP, 2 channel type (2 form A)
•
Peak off-state voltage: 350 V (min)
•
Trigger LED current: 3 mA (max)
•
On-state current: 120 mA (max)
•
Load current limiting: 150 mA to 300 mA (t = 5 ms)
•
On-state resistance: 35 Ω (max)
•
Isolation voltage: 2500 Vrms (min)
•
UL-recognized: UL 1577, File No.E67349
•
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11-5B2S
Weight: 0.26 g (typ.)
1 form A
4
3
1
2
TLP224G-2
TOSHIBA
11-10C4S
Weight: 0.54 g (typ.)
2 form A
8
5
1
4
Start of commercial production
1999-09
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-06-17
TLP224G,TLP224G-2
Pin Configuration (top view)
TLP224G
TLP224G-2
1
4
1
8
2
3
2
7
3
6
4
5
1: Anode
2: Cathode
3: Drain 1
4: Drain 2
1, 3:
2, 4:
5:
6:
7:
8:
Anode
Cathode
Drain 1
Drain 2
Drain 3
Drain 4
Internal Circuit
TLP224G
1
4
2
3
© 2019
Toshiba Electronic Devices & Storage Corporation
2
2019-06-17
TLP224G,TLP224G-2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
IF
50
mA
Forward current derating
(Ta ≥ 25°C)
∆IF/°C
−0.5
mA/°C
Peak forward current
(100 μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
6
V
Diode power dissipation
PD
50
mW
△PD /°C
-0.5
mW/°C
Tj
125
°C
VOFF
350
V
ION
120
mA
∆ION/°C
−1.2
mA/°C
PO
504
mW
ΔPO / °C
-5.04
mW / °C
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 2)
BVS
2500
Vrms
Forward current
LED
Diode power dissipation derating
(Ta ≥ 25°C)
Junction temperature
Off-state output terminal voltage
On-state current
Detector
(Note 1)
On-state current derating
(Ta ≥ 25°C)
(Note 1)
Output power dissipation
Output power dissipation derating
(Ta ≥ 25°C)
Junction temperature
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Two channels operating simultaneously.
Note 2: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shored
together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
―
―
280
V
Forward current
IF
5
7.5
25
mA
On-state current
ION
―
―
100
mA
Operating temperature
Topr
−20
―
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-06-17
TLP224G,TLP224G-2
Individual Electrical Characteristics (Ta = 25°C)
Characteristics
LED
Symbol
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 6 V
―
―
10
μA
CT
VF = 0 V, f = 1 MHz
―
30
―
pF
Off-state current
IOFF
VOFF = 350 V
―
―
1
μA
Capacitance
COFF
V = 0 V, f = 1 MHz
―
40
―
pF
Min
Typ.
Max
Unit
―
1
3
mA
Capacitance
Detector
Test Condition
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Symbol
Test Condition
ION = 120 mA
IFT
Return LED current
IFC
IOFF = 10 μA
0.1
0.4
mA
Load current limiting
ILIM
IF = 5 mA, VDD = 5 V, t = 5 ms
150
―
300
mA
On-state resistance
RON
ION = 120 mA, IF = 5 mA
―
22
35
Ω
Min
Typ.
Max
Unit
―
0.8
―
pF
1014
―
Ω
2500
―
―
Vrms
Min
Typ.
Max
Unit
―
―
1
ms
―
―
1
ms
Isolation Characteristics (Ta = 25°C)
Characteristics
Capacitance input to output
Isolation resistance
Symbol
VS = 0 V, f = 1 MHz
CS
VS = 500 V, R.H. ≤ 60 %
RS
Isolation voltage
Test Condition
BVS
5×
AC, 60 s
1010
Switching Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Turn-on time
tON
RL = 200 Ω
VCC = 20 V, IF = 5 mA
(Note)
Turn-off time
tOFF
RL = 200 Ω
VCC = 20 V, IF = 5 mA
(Note)
Note: Switching time test circuit
IF
1
4
2
3
RL
VDD
IF
VOUT
90%
VOUT
10%
tON
© 2019
Toshiba Electronic Devices & Storage Corporation
4
tOFF
2019-06-17
TLP224G,TLP224G-2
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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Toshiba Electronic Devices & Storage Corporation
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2019-06-17