TLP227GA(F)

TLP227GA, TLP227GA-2 TOSHIBA Photocoupler Photo Relay TLP227GA, TLP227GA-2 Modem Telecommunications PBXs Unit: mm TLP227G The Toshiba TLP227GA series consist of an infrared-emitting diode optically coupled to a photo-MOSFET in a 4-pin DIP or a 8-pin DIP package, and has a peak off-State voltage of 400 V. Normally off function • TLP227GA : DIP4 (1 form A) TLP227GA-2 : DIP8 (2 form A) • Peak off-state voltage : 400 V (min) • Trigger LED current : 3 mA (max) • On-state current : 120 mA (max) • On-state resistance : 35 Ω (max) • Isolation voltage : 2500 Vrms (min) JEDEC ― • UL-recognized : UL 1577, File No.E67349 • cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349 JEITA ― • TOSHIBA 11-5B2S Weight: 0.26 g (typ.) Pin Configuration (top view) TLP227GA-2 TLP227GA TLP227GA-2 1 4 1 8 2 3 2 7 3 6 4 5 1: Anode 2: Cathode 3: Drain 4: Drain 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 JEDEC ― JEITA ― TOSHIBA 11-10C4S Weight: 0.54 g (typ.) Start of commercial production 2000-04 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP227GA, TLP227GA-2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ∆IF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 400 V ION 120 mA ∆ION/°C −1.2 mA/°C Forward current Led Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥25°C) Junction temperature Off-state output terminal voltage TLP227GA Detector On-state current TLP227GA-2 One channel Both channel TLP227GA On-state current One channel rating TLP227GA-2 (Ta ≥ 25°C) Both channel Output power dissipation Output power dissipation derating (Ta ≥ 25°C) TLP227GA TLP227GA-2 TLP227GA TLP227GA-2 432 Po −4.32 ΔPo / °C Junction temperature mW 600 −6.0 mW / °C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 320 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP227GA, TLP227GA-2 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF VOFF = 400 V ― ― 1 μA Min Typ. Max Unit ION = 120 mA ― 1 3 mA ION = 120 mA, IF = 5 mA ― 18 35 Ω Min Typ. Max Unit ― 0.8 ― pF 5 × 1010 1014 ― Ω 2500 ― ― Vrms Min Typ. Max Unit ― ― 1 ― ― 1 Off-state current IOFF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Trigger LED current IFT On-state resistance RON Test Condition Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. < = 60 % Isolation voltage BVS AC, 60 s Capacitance input to output Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 TLP227GA 2 4 RL VDD IF VOUT 3 VOUT 90% 10% tON IF 1 2 TLP227GA-2 8 7 RL tOFF VDD VOUT © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP227GA, TLP227GA-2 IF – Ta ION – Ta (mA) 80 240 ION 280 200 Allowable On-state current Allowable forward current IF (mA) 100 60 40 20 0 −20 0 20 40 60 80 100 160 120 80 40 0 −20 120 0 Ambient temperature Ta (°C) 20 40 IF – VF Ta = 25°C 3 1 0.1 0.6 Ta = 25°C IF = 5 mA 0.8 1 1.2 1.4 1.6 100 0 −100 −200 −3 1.8 −2 Forward voltage VF (V) −1 IF = 5 mA 2 3 (V) ION = 120 mA (mA) t