TLP227GA-2

TLP227GA, TLP227GA-2 TOSHIBA Photocoupler Photo Relay TLP227GA, TLP227GA-2 Modem Telecommunications PBXs The Toshiba TLP227GA series consist of a gallium arsenide infrared-emitting diode optically coupled to a photo-MOSFET in a 4-pin DIP or a 8-pin DIP package, and has a peak off-State voltage of 400 V. • • • • • • • Normally off function TLP227GA TLP227GA-2 Peak off-state voltage Trigger LED current On-state current On-state resistance Isolation voltage : DIP4 (1 form A) : DIP8 (2 form A) : 400 V (min) : 3 mA (max) : 120 mA (max) : 35Ω (max) : 2500 Vrms (min) JEDEC JEITA TOSHIBA TLP227GA 1 4 1 TLP227GA-2 8 Unit: mm ― ― 11-5B2 Pin Configuration (top view) Weight: 0.26 g (typ.) 2 1: Anode 2: Cathode 3: Drain 4: Drain 3 2 7 3 6 4 1, 3 : Anode 2, 4 : Cathode 5 : Drain D1 6 : Drain D2 7 : Drain D3 8 : Drain D4 5 JEDEC JEITA TOSHIBA ― ― 11-10C4 Weight: 0.54 g (typ.) 1 2007-10-01 TLP227GA, TLP227GA-2 Absolute Maximum Rating (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) = Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage TLP227GA On-state current Detector One channel Both channel ION 120 Ma Led Symbol IF ΔIF/°C IFP VR Tj VOFF Rating 50 −0.5 1 5 125 400 Unit mA mA/°C A V °C V TLP227GA-2 TLP227GA On-state One current channel rating TLP227GA-2 (Ta > 25°C) = Both channel Junction temperature ΔION/°C −1.2 mA/°C Tj Tstg Topr Tsol BVS 125 −55~125 −40~85 260 2500 °C °C °C °C Vrms Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. < 60%) = (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min ⎯ 5 ⎯ −20 Typ. ⎯ 7.5 ⎯ ⎯ Max 320 25 100 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP227GA, TLP227GA-2 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Led Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 400 V V = 0, f = 1 MHz Test Condition Min 1.0 ⎯ ⎯ ⎯ ⎯ Typ. 1.15 ⎯ 30 ⎯ ⎯ Max 1.3 10 ⎯ 1 ⎯ Unit V μA pF μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current On-state resistance Symbol IFT RON Test Condition ION = 120 mA ION = 120 mA, IF = 5 mA Min ⎯ ⎯ Typ. 1 18 Max 3 35 Unit mA Ω Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 min Isolation voltage BVS AC, 1 s (in oil) DC, 1 min (in oil) Min ⎯ 5 × 10 10 Typ. 0.8 10 14 Max ⎯ ⎯ ⎯ ⎯ ⎯ Unit pF Ω Vrms Vdc 2500 ⎯ ⎯ ⎯ 5000 5000 Switching Characteristics (Ta = 25°C) Characteristic Turn-on time Turn-off time Symbol tON tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA Min ⎯ (Note 2) ⎯ Typ. ⎯ ⎯ Max 1 1 Unit ms Note 2: Switching time test circuit IF TLP227GA 1 2 4 3 RL VDD IF VOUT VOUT 90% 10% tON tOFF IF TLP227GA-2 1 2 8 7 RL VDD VOUT 3 2007-10-01 TLP227GA, TLP227GA-2 IF – Ta 100 280 240 ION – Ta Allowable forward current IF (mA) (mA) On-state current ION 0 20 40 60 80 100 120 80 200 160 120 80 40 60 40 20 0 −20 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – VF 100 Ta = 25°C 200 Ta = 25°C IF = 5 m A ION – VON (mA) On-state current ION 10 (mA) 100 0 −100 −200 −3 30 Forward current IF 3 1 0.3 0.1 0.6 0.8 1 1.2 1.4 1.6 1.8 −2 −1 0 1 2 3 Forward voltage VF (V) On-state voltage VON (V) RON – Ta 60 ION = 120 mA IF = 5 m A t