TLP227GN-2

TLP227G(N),TLP227G-2(N) TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP227G(N),TLP227G-2(N) CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package. The TLP227G series are a bi-directional switch, which can replace mechanical relays in many applications. Unit: mm TLP227G FEATURES · · · · · · · TLP227G TLP227G-2 Trigger LED Current On-State Current On-State Resistance Isolation Voltage : 4 pin DIP (DIP4), 1 Channel Type (1 Form A) : 8 pin DIP (DIP8), 2 Channel Type (2 Form A) : 3 mA (MAX.) : 120 mA (MAX.) : 25 Ω (MAX.) : 2500 Vrms (MIN.) Peak Off-State Voltage : 350 V (MIN.) TOSHIBA Weight: 0.26 g 1 Form A 4 11-5B2 3 PIN CONFIGURATION (TOP VIEW) TLP227G TLP227G-2 1 2 Unit: mm 1 4 1 8 TLP227G-2 2 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 3 2 7 3 6 4 1, 3 : ANODE 2, 4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 5 TOSHIBA Weight: 0.54 g 2 Form A 8 11-10C4 7 6 5 1 2 3 4 1 2003-01-28 TLP227G(N),TLP227G-2(N) INTERNAL CIRCUIT 1 4 2 3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Forward Current Forward Current Derating (Ta > 25°C) = LED Peak Forward Current (100ms pulse, 100 pps) Reverse Voltage Junction Temperature Off-State Output Terminal Voltage TLP227G DETECTOR On-State Current TLP227G-2 Both Channel (Note 1) TLP227G On-State Current Derating (Ta > 25°C) = One Channel TLP227G-2 Both Channel (Note 1) Junction Temperature Storage Temperature Range Operating Temperature Range Lead Soldering Temperature (10 s) Isolation Voltage (AC, 1 minute, R.H. < 60%) = (Note 2) Tj Tstg Topr Tsol BVS 125 -55~125 -40~85 260 2500 °C °C °C °C Vrms DION/°C -1.2 mA/°C One Channel ION 120 mA SYMBOL IF DIF/°C IFP VR Tj VOFF RATING 50 -0.5 1 5 125 350 UNIT mA mA/°C A V °C V (Note 1) :Two channels operating simultaneously. (Note 2):Device considered a two-terminal device : LED side pins shorted together, and shorted together. DETECTOR side pins RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC Supply Voltage Forward Current On-State Current Operating Temperature SYMBOL VDD IF ION Topr MIN. ¾ 5 ¾ -20 TYP. ¾ 7.5 ¾ ¾ MAX. 280 25 120 65 UNIT V mA mA °C 2 2003-01-28 TLP227G(N),TLP227G-2(N) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage LED Reverse Current Capacitance DETECTOR Off-State Current SYMBOL VF IR CT IOFF TEST CONDITION IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V V = 0, f = 1 MHz MIN. 1.0 ¾ ¾ ¾ ¾ TYP. 1.15 ¾ 30 ¾ MAX. 1.3 10 ¾ 1 ¾ UNIT V mA pF mA Capacitance COFF 40 pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Trigger LED Current Close LED Current On-State Resistance SYMBOL IFT IFC RON TEST CONDITION ION = 120 mA IOFF = 100 mA ION = 120 mA, IF = 5 mA MIN. ¾ 0.1 ¾ TYP. 1 ¾ 14 MAX. 3 ¾ 25 UNIT mA mA W ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Capacitance Input to Output Isolation Resistance SYMBOL CS RS TEST CONDITION VS = 0 V, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 minute Isolation Voltage BVS AC, 1 second (in oil) DC, 1 minute (in oil) MIN. ¾ 5 ´ 10 10 TYP. 0.8 10 14 MAX. ¾ ¾ ¾ ¾ ¾ UNIT pF W Vrms Vdc 2500 ¾ ¾ ¾ 5000 5000 SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Turn-on Time Turn-off Time SYMBOL tON tOFF TEST CONDITION RL = 200 W VDD = 20 V, IF = 5 mA MIN. ¾ (Note 3) ¾ TYP. 0.3 0.1 MAX. 1 1 UNIT ms (Note 3) : SWITCHING TIME TEST CIRCUIT IF TLP227G 1 2 4 3 RL VDD VOUT IF VOUT 90% 10% tON tOFF 3 2003-01-28 TLP227G(N),TLP227G-2(N) RESTRICTIONS ON PRODUCT USE 020704EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2003-01-28