TLP2309(E)

TLP2309 Photocouplers Infrared LED & Photo IC TLP2309 1. Applications • Industrial Inverters • Switching Power Supplies • High-Speed Digital Interfacing 2. General The Toshiba TLP2309 consists of a high-output infrared LED coupled with a high-speed photo-diode-transistor chip. It is housed in the SO6 package. The TLP2309 guarantees operation at up to 110  and on supplies both 3.3 V and 5 V. Also, since the TLP2309 guarantees a creepage / clearance distance ≥ 5.0 mm and internal isolation thickness ≥ 0.4 mm, this product is in the reinforced insulation class according to international safety standards. 3. Features (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 110  (4) Supply voltage: 3.3 V / 5 V (5) Data transfer rate: 1 Mbit/s (typ.) (NRZ) (6) Common-mode transient immunity: 15 kV/µs (min) (7) Isolation voltage: 3750 Vrms (min) (8) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Configuration 1: Anode 3: Cathode 4: GND 5: VO (Output) 6: VCC 11-4L1S Start of commercial production ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 2011-04 2019-11-26 Rev.8.0 TLP2309 5. Internal Circuit (Note) Note: A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4. 6. Principle of Operation 6.1. Truth Table Input LED Output H ON L L OFF H 6.2. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 ©2015-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-11-26 Rev.8.0 TLP2309 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating IF 25 mA -1.0 mA/ (Ta ≥ 100 ) ∆IFP/∆Ta Peak transient input forward current 50 mA -2.0 mA/ 1 A ∆IFPT/∆Ta -25 mA/ PD 40 mW ∆PD/∆Ta -1.6 mW/ VR 5 V IO 8 mA IFPT (Ta ≥ 85 ) Input power dissipation Input power dissipation derating Unit ∆IF/∆Ta IFP Peak transient input forward current derating Rating (Ta ≥ 100 ) Input forward current (pulsed) Input forward current derating (pulsed) Note (Ta ≥ 100 ) Input reverse voltage Detector Output current (Note 1) (Note 2) Peak output current IOP 16 Supply voltage VCC -0.5 to 30 Output voltage VO -0.5 to 20 Output power dissipation PO 100 mW ∆PO/∆Ta -4.0 mW/ Topr -40 to 110  Tstg -55 to 125 Output power dissipation derating (Ta ≥ 100 ) Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage (10 s) Tsol (AC, 60 s, R.H. ≤ 60 %) BVS V 260 (Note 3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 % Note 2: Pulse width (PW) ≤ 1 µs, 300 pps Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input on-state current IF(ON) 10  20 mA Input off-state voltage VF(OFF) 0  0.8 V Supply voltage VCC 2.7 3.3 / 5 20 Operating temperature Topr -40  110 (Note 1)  Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note: A ceramic capacitor (0.1 µF) should be connected between pin 6 and pin 4 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note 1: Denotes the operating range, not the recommended operating condition. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-26 Rev.8.0 TLP2309 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Input forward voltage Input forward voltage temperature coefficient VF Test Condition IF = 10 mA ∆VF/∆Ta IF = 10 mA, Ta = -40  to 110  Input reverse current Min Typ. Max Unit 1.45 1.55 1.7 V  -2.0  mV/ 10 µA IR VR = 5 V   Input capacitance Ct V = 0 V, f = 1 MHz  60  pF High-level output current IOH IF = 0 mA, VO = 5.5 V, VCC = 5.5 V  3 500 nA IF = 0 mA, VO = 20 V, VCC = 30 V   5 µA IF = 0 mA, VO = 20 V, VCC = 30 V, Ta = 110    50 High-level supply current ICCH IF = 0 mA, VCC = 30 V  0.01 1 Current transfer ratio IO/IF IF = 10 mA, VO = 0.4 V, VCC = 3.3 V 15   IF = 16 mA, VO = 0.4 V, VCC = 4.5 V 15   IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA   0.4 Low-level output voltage Note: VOL % V All typical values are at Ta = 25 . 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Conditions Min Typ. Max Unit Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz  0.8  pF Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % 1012 1014  Ω (Note 1) AC, 60 s 3750   Vrms Isolation voltage BVS Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 11. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 110 ) Characteristics Symbol Note Propagation delay time (H/L) tpHL Propagation delay time (L/H) tpLH Propagation delay time (H/L) tpHL Propagation delay time (L/H) tpLH High-level common-mode transient immunity CMH (Note 1) Low-level common-mode transient immunity CML (Note 1) Test Circuit Min Typ. Max Unit Fig. IF = 0→10 mA, RL = 1.9 kΩ, 12.1.1 VCC = 3.3 V, CL = 15 pF   1 µs IF = 10→0 mA, RL = 1.9 kΩ, VCC = 3.3 V, CL = 15 pF   1 IF = 0→16 mA, RL = 1.9 kΩ, VCC = 5 V, CL = 15 pF   0.8 IF = 16→0 mA, RL = 1.9 kΩ, VCC = 5 V, CL = 15 pF   0.8 15 20  -15 -20  Fig. 12.1.1 Test Condition Fig. IF = 0 mA, VCC = 3.3 V / 5 V, 12.1.2 VCM = 400 Vp-p, RL = 4.1 kΩ, Ta = 25  IF = 10 mA, VCC = 3.3 V / 5 V, VCM = 400 Vp-p, RL = 4.1 kΩ, Ta = 25  kV/µs Note: All typical values are at Ta = 25 . Note 1: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 2.0 V). CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 0.8 V). ©2015-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-26 Rev.8.0 TLP2309 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 Switching Time Test Circuit and Waveform Fig. 12.1.2 Common-Mode Transient Immunity Test Circuit and Waveform ©2015-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-26 Rev.8.0 TLP2309 12.2. Characteristics Curves (Note) Fig. 12.2.1 IF - VF Fig. 12.2.2 IOH - Ta Fig. 12.2.3 IO - IF Fig. 12.2.4 IO/IF - IF Fig. 12.2.5 IO - IF Fig. 12.2.6 IO/IF - IF ©2015-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-26 Rev.8.0 TLP2309 Fig. 12.2.7 IO/IF - Ta Fig. 12.2.8 IO/IF - Ta Fig. 12.2.9 IO/IF - Ta Fig. 12.2.10 IO/IF - Ta Fig. 12.2.11 IO - VO Fig. 12.2.12 IO - VO ©2015-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-11-26 Rev.8.0 TLP2309 Fig. 12.2.13 VO - IF Fig. 12.2.14 VO - IF Fig. 12.2.15 VOL - Ta Fig. 12.2.16 VOL - Ta Fig. 12.2.17 tpLH, tpHL - Ta Fig. 12.2.18 tpLH, tpHL - Ta ©2015-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-11-26 Rev.8.0 TLP2309 Fig. 12.2.19 tpLH, tpHL - RL Note: Fig. 12.2.20 tpLH, tpHL - RL The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-11-26 Rev.8.0 TLP2309 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-11-26 Rev.8.0 TLP2309 14. Land Pattern Dimensions (for reference only) Unit: mm 15. Marking ©2015-2019 Toshiba Electronic Devices & Storage Corporation 11 2019-11-26 Rev.8.0 TLP2309 16. EN 60747-5-5 Option (V4) Specification • Part number: TLP2309 (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (V4) of EN 60747. Example: TLP2309(V4-TPL,E V4: EN 60747 option TPL: Tape type E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP2309(V4-TPL,E → TLP2309 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 16.1 EN 60747 Isolation Characteristics ©2015-2019 Toshiba Electronic Devices & Storage Corporation 12 2019-11-26 Rev.8.0 TLP2309 Fig. 16.2 Insulation Related Specifications (Note) Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 16.3 Marking on Packing Fig. 16.4 Marking Example (Note) Note: The above marking is applied to the photocouplers that have been qualified according to option (V4) of EN 60747. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 13 2019-11-26 Rev.8.0 TLP2309 Fig. 16.5 Measurement Procedure ©2015-2019 Toshiba Electronic Devices & Storage Corporation 14 2019-11-26 Rev.8.0 TLP2309 17. Ordering Information When placing an order, please specify the part number, tape type and quantity as shown in the following example. Example) TLP2309(TPL,E 3000 pcs Part number: TLP2309 Tape type: TPL (12-mm pitch) [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 3000): 3000 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 15 2019-11-26 Rev.8.0 TLP2309 Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4L1S ©2015-2019 Toshiba Electronic Devices & Storage Corporation 16 2019-11-26 Rev.8.0 TLP2309 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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