TLP2312
Photocouplers
Infrared LED & Photo IC
TLP2312
1. Applications
•
Programmable Logic Controllers (PLCs)
•
Industrial Inverters
•
High-Speed Digital Interfacing for Instrumentation and Control Devices
2. General
TLP2312 is 5 Mbps high speed photocoupler operated at low supply voltage in the small SO6 package.
Since supply voltage of only 2.2 V is needed to operate TLP2312, building another power supply circuit is
unnecessary even in using it in a low supply voltage system of 2.5 V LVCMOS level. Therefore, this product
contributes to reduce the number of components.
The low threshold input current (IFLH) of 1.6 mA (max) and the low supply current (IDDL/IDDH) of 0.5 mA (max)
at entire operating temperature range of -40 to 125 enables TLP2312 to be driven from a microcontroller
directly, and provides energy saving of systems.
The detector has a totem-pole output stage with current sourcing and sinking capabilities. TLP2312 has an
internal Faraday shield that provides a guaranteed common-mode transient immunity of ±20 kV/µs.
3. Features
(1)
Package: SO6
(2)
Data transfer rate: 5 Mbps (typ.)
(3)
Supply current: 0.5 mA (max)
(4)
Threshold input current: 1.6 mA (max)
(5)
Supply voltage: 2.2 to 5.5 V
(6)
Operating temperature range: -40 to 125
(7)
Pulse width distortion: 20 ns (max)
(8)
Isolation voltage: 3750 Vrms (min)
(9)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory (Pending)
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2020
Toshiba Electronic Devices & Storage Corporation
1
2020-02
2020-03-31
Rev.2.0
TLP2312
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: GND
5: VO (Output)
6: VDD
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
LED
Output
H
ON
H
L
OFF
L
6.2. Mechanical Parameters
Characteristics
Min
Unit
Creepage distances
5.0
mm
Clearance
5.0
Internal isolation thickness
0.4
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2020-03-31
Rev.2.0
TLP2312
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Input forward current
Input forward current derating
Unit
IF
8
mA
∆IF/∆Ta
-0.32
mA/
(Ta ≥ 110 )
∆IFP/∆Ta
IFP
Peak transient input forward
current
16
mA
-0.64
mA/
1
A
∆IFPT/∆Ta
-40
mA/
VR
5
V
IFPT
Peak transient input forward
current derating
Rating
(Ta ≥ 110 )
Input forward current (pulsed)
Input forward current derating
(pulsed)
Note
(Ta ≥ 110 )
Input reverse voltage
Input power dissipation
(Note 1)
(Note 2)
PD
20
mW
∆PD/∆Ta
-0.8
mW/
IO
8
mA
Output voltage
VO
-0.5 to VDD + 0.5
V
Supply voltage
VDD
-0.5 to 6
V
Input power dissipation
derating
(Ta ≥ 110 )
Detector Output current
Output power dissipation
Output power dissipation
derating
(Ta ≥ 110 )
Common Operating temperature
Storage temperature
20
mW
-0.8
mW/
Topr
-40 to 125
Tstg
-55 to 125
(10 s)
Tsol
260
(AC, 60 s, R.H. ≤ 60 %)
BVS
3750
Vrms
Lead soldering temperature
Isolation voltage
PO
∆PO/∆Ta
(Note 3)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 %
Note 2: Pulse width (PW) ≤ 1 µs, 300 pps
Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol
Note
Min
Typ.
Max
Unit
Input on-state current
IF(ON)
2
6
mA
Input off-state voltage
VF(OFF)
0
0.8
V
Rise time of IF
tr(IF)
(Note 1)
5n
60
s
Fall time of IF
tf(IF)
(Note 2)
5n
60
s
Supply voltage
VDD
(Note 3)
2.2
2.5 / 3.3 / 5
5.5
V
Operating temperature
Topr
(Note 3)
-40
125
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1 µF) should be connected between pin 6 and pin 4 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise time of input forward current which takes for linear increase from 0 mA to 2 mA.
Note 2: The fall time of input forward current which takes for linear decrease from 2 mA to 0 mA.
Note 3: Denotes the operating range, not the recommended operating condition.
©2020
Toshiba Electronic Devices & Storage Corporation
3
2020-03-31
Rev.2.0
TLP2312
9. Electrical Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 125 , VDD = 2.2 to 5.5 V)
Characteristics
Symbol Test Circuit
Input forward voltage
Input forward voltage
temperature coefficient
VF
∆VF/∆Ta
Test Condition
Min
Typ.
Max
Unit
V
IF = 2 mA
1.2
1.9
IF = 2 mA, Ta = 25
1.4
1.53
1.7
IF = 2 mA
-1.58
mV/
Input reverse current
IR
VR = 5 V, Ta = 25
10
µA
Input capacitance
Ct
V = 0 V, f = 1 MHz, Ta = 25
22
pF
0.0008
0.1
V
0.11
0.41
Low-level output voltage
VOL
Fig. 12.1.1 IO = 20 µA, IF = 0 mA
IO = 3.2 mA, IF = 0 mA
High-level output voltage
VOH
Fig. 12.1.2 IO = -20 µA, IF = 2 mA
IO = -3.2 mA, IF = 2 mA
VDD - 0.1
VDD - 0.001
VDD - 0.65
VDD - 0.14
Low-level supply current
IDDL
Fig. 12.1.3 IF = 0 mA
0.39
0.5
High-level supply current
IDDH
Fig. 12.1.4 IF = 2 mA
0.35
0.5
Threshold input current (L/H)
IFLH
0.55
1.6
Note:
IO = -3.2 mA, VO > VDD - 1 V
mA
All typical values are at VDD = 3.3 V, Ta = 25 , unless otherwise noted.
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Total capacitance (input to output)
CS
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
(Note 1) AC, 60 s
3750
Isolation voltage
BVS
Note
Test Condition
Min
Typ.
Max
Unit
0.8
pF
1012
1014
Ω
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
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2020-03-31
Rev.2.0
TLP2312
11. Switching Characteristics (Note)
(Unless otherwise specified, Ta = -40 to 125 , VDD = 2.2 to 5.5 V)
Characteristics
Symbol
Note
Propagation delay time (L/H)
tpLH
(Note 1)
Propagation delay time (H/L)
tpHL
Pulse width distortion
tpsk
(Note 1),
(Note 2)
Propagation delay time (L/H)
tpLH
(Note 1)
Pulse width distortion
tpHL
tpsk
(Note 1),
(Note 2)
Propagation delay time (L/H)
tpLH
(Note 1)
Propagation delay time (H/L)
tpHL
Propagation delay skew
(device to device)
(Note 1),
(Note 2)
Rise time
tr
(Note 1)
Fall time
tf
High-level common-mode
transient immunity
CMH
Low-level common-mode
transient immunity
CML
VIN = 2.5 V
RIN = 470 Ω
CIN = 68 pF
VIN = 5 V
RIN = 2.2 kΩ
CIN = 10 pF
|tpHL-tpLH|
tpsk
Test Condition
VIN = 3.3 V
RIN = 1 kΩ
CIN = 22 pF
|tpHL-tpLH|
Propagation delay skew
(device to device)
Pulse width distortion
Fig.
12.1.5
|tpHL-tpLH|
Propagation delay skew
(device to device)
Propagation delay time (H/L)
Test
Circuit
Fig.
12.1.6
Min
Typ.
Max
Unit
26.8
250
ns
27.3
250
0.5
20
-40
40
32.7
250
28.2
250
4.5
20
-45
45
31.3
250
28.5
250
2.8
20
-45
45
VIN = 0 → 3.3 V, RIN = 1 kΩ,
CIN = 22 pF
2.2
VIN = 3.3 → 0 V, RIN = 1 kΩ,
CIN = 22 pF
1.6
IF = 2 mA,
VCM = 1000 Vp-p, Ta = 25
±20
±40
kV/µs
IF = 0 mA,
VCM = 1000 Vp-p, Ta = 25
±20
±40
kV/µs
Note: All typical values are at VDD = 3.3 V, Ta = 25 , unless otherwise noted.
Note 1: f = 2.5 MHz, duty = 50 %, input current tr = tf = 5 ns or less.
Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
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2020-03-31
Rev.2.0
TLP2312
12. Test Circuits and Characteristics Curves
12.1. Test Circuits
Fig. 12.1.1 VOL Test Circuit
Fig. 12.1.2 VOH Test Circuit
Fig. 12.1.3 IDDL Test Circuit
Fig. 12.1.4 IDDH Test Circuit
Fig. 12.1.5 Switching Time Test Circuit and Waveform
Fig. 12.1.6 Common-Mode Transient Immunity Test Circuit and Waveform
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TLP2312
12.2. Characteristics Curves (Note)
Fig. 12.2.1 IF - VF
Fig. 12.2.2 IF - Ta
Fig. 12.2.3 VOL - Ta
Fig. 12.2.4 VOL - Ta
Fig. 12.2.5 VOH - Ta
Fig. 12.2.6 VOH - Ta
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TLP2312
Fig. 12.2.7 IDDL - Ta
Fig. 12.2.8 IDDH - Ta
Fig. 12.2.9 IFLH - Ta
Fig. 12.2.10 tpHL, tpLH, |tpHL-tpLH| - Ta
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Toshiba Electronic Devices & Storage Corporation
Fig. 12.2.11 tpHL, tpLH, |tpHL-tpLH| - Ta
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TLP2312
Note:
Fig. 12.2.12 tpHL, tpLH, |tpHL-tpLH| - Ta
Fig. 12.2.13 tpHL, tpLH, |tpHL-tpLH| - Ta
Fig. 12.2.14 tpHL, tpLH, |tpHL-tpLH| - VDD
Fig. 12.2.15 tpHL, tpLH, |tpHL-tpLH| - VDD
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
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2020-03-31
Rev.2.0
TLP2312
13. Soldering and Storage
13.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
13.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2020
Toshiba Electronic Devices & Storage Corporation
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2020-03-31
Rev.2.0
TLP2312
14. Land Pattern Dimensions (for reference only)
Unit: mm
15. Marking
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Toshiba Electronic Devices & Storage Corporation
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2020-03-31
Rev.2.0
TLP2312
16. EN 60747-5-5 Option (V4) Specification
•
Part number: TLP2312 (Note 1)
•
The following part naming conventions are used for the devices that have been qualified according to
option (V4) of EN 60747.
Example: TLP2312(V4-TPL,E
V4: EN 60747 option
TPL: Tape type
E: [[G]]/RoHS COMPATIBLE (Note 2)
Note 1: Use TOSHIBA standard type number for safety standard application.
e.g., TLP2312(V4-TPL,E → TLP2312
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 16.1 EN 60747 Insulation Characteristics
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TLP2312
Table
Insulation Related Specifications (Note)
Insulation Related Parameters
Symbol
TLP2312
Minimum creepage distance
Cr
5.0 mm
Minimum clearance
Cl
5.0 mm
Minimum insulation thickness
ti
0.4 mm
CTI
500
Comparative tracking index
Note:
This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 16.2 Marking on Packing for EN 60747
Fig. 16.3 Marking Example (Note)
Note:
A different marking is used for photocouplers that have been qualified according to option (V4) of EN 60747.
See Fig.16.3.
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Rev.2.0
TLP2312
Fig. 16.4 Measurement Procedure
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TLP2312
17. Ordering Information
When placing an order, please specify the part number, tape type and quantity as shown in the following example.
Example) TLP2312(TPL,E 3000 pcs
Part number: TLP2312
Tape type: TPL
[[G]]/RoHS COMPATIBLE: E (Note 1)
Quantity (must be a multiple of 3000): 3000 pcs
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TLP2312
Package Dimensions
Unit: mm
Weight: 0.08 g (typ.)
Package Name(s)
TOSHIBA: 11-4L1S
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Toshiba Electronic Devices & Storage Corporation
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2020-03-31
Rev.2.0
TLP2312
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
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