TLP2362(TPR,E

TLP2362 Photocouplers Infrared LED & Photo IC TLP2362 1. Applications • Factory Automation (FA) • Plasma Display Panels (PDPs) • Measuring Instruments 2. General The Toshiba TLP2362 consists of a high-output infrared LED coupled with integrated high gain, high-speed photodetectors. The TLP2362 guarantees operation at up to 125  and on supplies from 2.7 V to 5.5 V. It is housed in the SO6 package. The TLP2362 has an internal Faraday shield that provides a guaranteed commonmode transient immunity of ±20 kV/µs. 3. Features (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 125  (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 10 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4 mA (max) (8) Common-mode transient immunity: ±20 kV/µs (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: VO (output) 6: VCC 11-4L1S Start of commercial production ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 2011-05 2019-11-26 Rev.8.0 TLP2362 5. Internal Equivalent Circuit (Note) Note: A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4. 6. Principle of Operation 6.1. Truth Table Input LED Output H ON L L OFF H 6.2. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 ©2016-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-11-26 Rev.8.0 TLP2362 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating IF 25 mA -0.67 mA/ (Ta ≥ 110 ) ∆IFP/∆Ta Peak transient input forward current 40 mA -1.0 mA/ 1 A ∆IFPT/∆Ta -25 mA/ PD 40 mW ∆PD/∆Ta -1.0 mW/ IFPT (Ta ≥ 110 ) Input power dissipation Input power dissipation derating Unit ∆IF/∆Ta IFP Peak transient input forward current derating Rating (Ta ≥ 110 ) Input forward current (pulsed) Input forward current derating (pulsed) Note (Ta ≥ 110 ) Input reverse voltage (Note 1) (Note 2) VR 5 V IO 25 mA Output voltage VO 6 V Supply voltage VCC 6 Detector Output current Output power dissipation Output power dissipation derating (Ta ≥ 110 ) Common Operating temperature Storage temperature 60 mW -1.5 mW/ Topr -40 to 125  Tstg -55 to 125 (10 s) Tsol 260 (AC, 60 s, R.H. ≤ 60 %) BVS Lead soldering temperature Isolation voltage PO ∆PO/∆Ta (Note 3) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 % Note 2: Pulse width (PW) ≤ 1 µs, 300 pps Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input on-state current IF(ON) (Note 1) 7.5 Input off-state voltage VF(OFF) 0  14 mA  0.8 V Supply voltage VCC (Note 2) 2.7 3.3/5.0 5.5 Operating temperature Topr (Note 2) -40  125  Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note: A ceramic capacitor (0.1 µF) should be connected between pin 4 and pin 6 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note 1: The rise and fall times of the input on-current should be less than 0.5 µs. Note 2: Denotes the operating range, not the recommended operating condition. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-26 Rev.8.0 TLP2362 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 125 , VCC = 2.7 to 5.5 V) Characteristics Symbol Input forward voltage Input forward voltage temperature coefficient Note Test Circuit Test Condition Min Typ. Max Unit VF  IF = 10 mA, Ta = 25  1.45 1.55 1.7 V ∆VF/∆Ta  IF = 10 mA  -2.0  mV/ IR  VR = 5 V, Ta = 25    10 µA V = 0 V, f = 1 MHz, Ta = 25   60  pF VF = 0.8 V, VO = 5.5 V, VCC = 5.5 V   50 µA VF = 0.8 V, VO = 5.5 V, VCC = 5.5 V, Ta = 25    10 Input reverse current Input capacitance Ct  High-level output current IOH Fig. 12.1.1 Low-level output voltage VOL Fig. 12.1.2 IF = 10 mA IO = 13 mA (Sinking)  0.2 0.6 V High-level supply current ICCH Fig. 12.1.3 IF = 0 mA  1.6 4.0 mA Low-level supply current ICCL Fig. 12.1.4 IF = 10 mA  2.0 4.0 Threshold input current (H/L) IFHL  IO = 13 mA (Sinking), VO < 0.6 V  1.0 5.0 Min Typ. Max Unit Note: All typical values are at VCC = 5 V, Ta = 25 . 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Conditions Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz  0.8  pF Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % 1012 1014  Ω (Note 1) AC, 60 s 3750   Vrms Isolation voltage BVS Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-26 Rev.8.0 TLP2362 11. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 125 , VCC = 2.7 to 5.5 V) Characteristics Symbol Note Propagation delay time (H/L) tpHL (Note 1) Propagation delay time (L/H) tpLH Pulse width distortion Test Circuit Min Typ. Max Unit IF = 0 → 7.5 mA, RL = 350 Ω, CL = 15 pF  35 100 ns (Note 1) IF = 7.5 → 0 mA, RL = 350 Ω, CL = 15 pF  26 100 |tpHLtpLH| (Note 1) IF = 7.5 mA, RL = 350 Ω, CL = 15 pF  9 35 tpsk (Note 1), (Note 2) IF = 7.5 mA, RL = 350 Ω, CL = 15 pF -40  40 Fall time tf (Note 1) IF = 0 → 7.5 mA, RL = 350 Ω, CL = 15 pF  2.6  Rise time tr (Note 1) IF = 7.5 → 0 mA, RL = 350 Ω, CL = 15 pF  12.8  VCM = 1000 Vp-p, IF = 0 mA, VCC = 3.3 V / 5 V, Ta = 25  ±20 ±25  VCM = 1000 Vp-p, IF = 10 mA, VCC = 3.3 V / 5 V, Ta = 25  ±20 ±25  Propagation delay skew (device to device) High-level common-mode transient immunity CMH Low-level common-mode transient immunity CML Fig. 12.1.5 Fig. 12.1.6 Test Condition kV/µs Note: All typical values are at VCC = 5 V, Ta = 25 . Note 1: f = 5 MHz, duty = 50 %, input current tr = tf = 5 ns or less, CL is less than 15 pF which includes probe and stray wiring capacitance. Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc.). ©2016-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-26 Rev.8.0 TLP2362 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 IOH Test Circuit Fig. 12.1.2 VOL Test Circuit Fig. 12.1.3 ICCH Test Circuit Fig. 12.1.4 ICCL Test Circuit Fig. 12.1.5 Switching Time Test Circuit and Waveform Fig. 12.1.6 Common-Mode Transient Immunity Test Circuit and Waveform ©2016-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-26 Rev.8.0 TLP2362 12.2. Characteristics Curves (Note) Fig. 12.2.1 IF - VF Fig. 12.2.2 IF - Ta Fig. 12.2.3 VOL - Ta Fig. 12.2.4 VOL - Ta Fig. 12.2.5 VO - IF Fig. 12.2.6 VO - IF ©2016-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-11-26 Rev.8.0 TLP2362 Fig. 12.2.7 IFHL - Ta Fig. 12.2.8 IFHL - Ta Fig. 12.2.9 ICCH, ICCL - Ta Fig. 12.2.10 ICCH, ICCL - Ta Fig. 12.2.11 tpHL, tpLH - Ta Fig. 12.2.12 ltpHL-tpLHl - Ta ©2016-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-11-26 Rev.8.0 TLP2362 Note: Fig. 12.2.13 tpHL, tpLH - Ta Fig. 12.2.14 ltpHL-tpLHl - Ta Fig. 12.2.15 tpHL, tpLH - IF Fig. 12.2.16 ltpHL-tpLHl - IF Fig. 12.2.17 tpHL, tpLH - IF Fig. 12.2.18 ltpHL-tpLHl - IF The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-11-26 Rev.8.0 TLP2362 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-11-26 Rev.8.0 TLP2362 14. Land Pattern Dimensions (for reference only) Unit: mm 15. Marking ©2016-2019 Toshiba Electronic Devices & Storage Corporation 11 2019-11-26 Rev.8.0 TLP2362 16. EN 60747-5-5 Option (V4) Specification • Part number: TLP2362 (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (V4) of EN 60747. Example: TLP2362(V4-TPL,E V4: EN 60747 option TPL: Tape type E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP2362(V4-TPL,E → TLP2362 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 16.1 EN 60747 Isolation Characteristics ©2016-2019 Toshiba Electronic Devices & Storage Corporation 12 2019-11-26 Rev.8.0 TLP2362 Fig. 16.2 Insulation Related Specifications (Note) Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 16.3 Marking on Packing Fig. 16.4 Marking Example (Note) Note: The above marking is applied to the photocouplers that have been qualified according to option (V4) of EN 60747. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 13 2019-11-26 Rev.8.0 TLP2362 Fig. 16.5 Measurement Procedure ©2016-2019 Toshiba Electronic Devices & Storage Corporation 14 2019-11-26 Rev.8.0 TLP2362 17. Ordering Information When placing an order, please specify the part number, tape type and quantity as shown in the following example. Example) TLP2362(TPL,E 3000 pcs Part number: TLP2362 Tape type: TPL (12-mm pitch) [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 3000): 3000 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 15 2019-11-26 Rev.8.0 TLP2362 Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4L1S ©2016-2019 Toshiba Electronic Devices & Storage Corporation 16 2019-11-26 Rev.8.0 TLP2362 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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