TLP2409(TP,F)

TLP2409 Photocouplers Infrared LED & Photo IC TLP2409 1. Applications • High-Speed Digital Interfacing for Instrumentation and Control Devices • Industrial Inverters • Switching Power Supplies 2. General The Toshiba TLP2409 consists of a high output power infrared LED coupled with a high-speed photodiodetransistor chip. It is housed in the SO8 package. The TLP2409 features an operating temperature range of up to 125, making it ideal for applications like DC-DC converters and industrial equipment which require operations at high temperatures. 3. Features (1) Package: SO8 (2) Propagation delay time: tpHL = 0.8 µs, tpLH = 0.8µs (max)@ RL = 1.9 kΩ (3) Operating temperature: -55 to 125  (4) Isolation voltage: 3750 Vrms (min) (5) TTL-compatible (6) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND (Emitter) 6: Output (Collector) 7: N.C. 8: VCC 11-5K1S Start of commercial production ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2010-03 2020-02-17 Rev.3.0 TLP2409 5. Internal Circuit (Note) Note: A 0.1µF bypass capacitor must be connected between pin 8 and pin 5. 6. Principle of Operation 6.1. Mechanical Parameters Characteristics Min Unit Creepage distances 4.0 mm Clearance 4.0 Internal isolation thickness  7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current (Ta ≤ 110 ) IF Input forward current derating (Ta ≥ 110 ) ∆IF/∆Ta Input forward current (pulsed) (Ta ≤ 110 ) IFP Input forward current derating (pulsed) (Ta ≥ 110 ) ∆IFP/∆Ta Input reverse voltage Note (Note 1) Rating Unit 25 mA -0.67 mA/ 50 mA -1.34 mA/ VR 5 V Input power dissipation (Ta ≤ 110 ) PD 40 mW Input power dissipation derating (Ta ≥ 110 ) ∆PD/∆Ta -1.0 mW/ Detector Output current (Ta ≤ 95 ) IO 16 mA (Ta ≥ 95 ) ∆IO/∆Ta -0.3 mA/ Output voltage VO -0.5 to 20 V Supply voltage VCC -0.5 to 30 Output current derating Output power dissipation (Ta ≤ 95 ) PO 100 mW Output power dissipation derating (Ta ≥ 95 ) ∆PO/∆Ta -1.8 mW/ Topr -55 to 125  Tstg -55 to 150 Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage (10 s) Tsol AC, 60 s, R.H. ≤ 60 % BVS 260 (Note 2) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1 ms, duty = 50 % Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-02-17 Rev.3.0 TLP2409 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit mA Input forward current IF   15 Output current IO   7 Topr -55  125 Operating temperature Note:  The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this datasheet should also be considered. 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Input forward voltage Input forward voltage temperature coefficient Test Circuit Note Test Condition Min Typ. Max Unit VF  IF = 16 mA 1.40 1.57 1.80 V ∆VF/∆Ta  IF = 16 mA  -2  mV/ IR  VR = 3 V   10 µA Input reverse current Input capacitance Ct  VF = 0 V, f = 1 MHz  60  pF High-level output current IOH  IF = 0 mA, VCC = VO = 5.5 V  3 500 nA IF = 0 mA, VCC = 30 V, VO = 20 V   5 µA IF = 0 mA, VCC = 30 V, VO = 20 V, Ta = 100    50 Low-level output voltage VOL  IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA   0.4 V Current transfer ratio IO/IF  IF = 16 mA, VCC = 4.5 V, VO = 0.4 V 20   % High-level supply current ICCH  IF = 0 mA, VCC = 30 V  0.01 1 µA Min Typ. Max Unit  1.0  pF 1012 1014  Ω 3750   Vrms Note: All typical values are at Ta = 25 . 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Conditions Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 11. Switching Characteristics (Unless otherwise specified, Ta = 25 , VCC = 5 V) Characteristics Symbol Note Propagation delay time (H/L) tpHL Propagation delay time (L/H) tpLH High-level common-mode transient immunity CMH (Note 1) Low-level common-mode transient immunity CML (Note 2) Test Circuit Fig 12.1.1 Fig 12.1.2 Test Condition Min Typ. Max Unit IF = 0 → 16 mA, RL = 1.9 kΩ   0.8 µs IF = 16 → 0 mA, RL = 1.9 kΩ   0.8 IF = 0 mA, RL = 4.1 kΩ, VCM = 400 Vp-p 5000 10000  IF = 16 mA, RL = 4.1 kΩ, VCM = 400 Vp-p -5000 -10000  V/µs Note 1: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 2.0 V). Note 2: CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 0.8 V). ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-02-17 Rev.3.0 TLP2409 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 Switching Time Test Circuit and Waveform Fig. 12.1.2 Common-Mode Transient Immunity Test Circuit and Waveform ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-02-17 Rev.3.0 TLP2409 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 13.1.1 An example of a temperature profile when lead(Pb)-free solder is used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5 to 35 and 45% to 75%, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-02-17 Rev.3.0 TLP2409 14. Land Pattern Dimensions for Reference Only Unit: mm 15. Marking ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-02-17 Rev.3.0 TLP2409 Package Dimensions Unit: mm Weight: 0.11 g (typ.) Package Name(s) TOSHIBA: 11-5K1S ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-02-17 Rev.3.0 TLP2409 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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