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TLP250

TLP250

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    OC_9.66X6.4MM_TM

  • 描述:

    光电耦合器 Viso=2500Vrms VF(typ)=1.6V IF=20mA Vo=35V OC_9.66X6.4MM_TM

  • 数据手册
  • 价格&库存
TLP250 数据手册
TLP250 TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP250 Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. • • • • • • • • Input threshold current: IF=5mA(max.) Supply current (ICC): 11mA(max.) Supply voltage (VCC): 10−35V Output current (IO): ±1.5A (max.) Switching time (tpLH/tpHL): 0.5μs(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file No.E67349 Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage Please designate “Option(D4)” 1 2 8 7 6 5 Unit in mm TOSHIBA 11−10C4 Weight: 0.54 g(Typ.) : 4000VPK (Note):When a EN60747-5-2 approved type is needed, Pin Configuration (top view) Truth Table Tr1 Input LED On Off On Off Tr2 Off On 3 4 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : GND 6 : V O (Output) 7 : VO 8 : VCC Schmatic IF 2+ VF 3- I CC VCC 8 (Tr 1) 7 IO (Tr 2) 6 VO VO GND A 0.1μF bypass capcitor must be connected between pin 8 and 5 (See Note 5). 5 1 2007-10-01 TLP250 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 70°C) LED Peak transient forward curent Reverse voltage Junction temperature “H”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) “L”peak output current (PW ≤ 2.5μs,f ≤ 15kHz) Output voltage Detector Supply voltage Output voltage derating (Ta ≥ 70°C) Supply voltage derating (Ta ≥ 70°C) Junction temperature Operating frequency Operating temperature range Storage temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 4) (Note 3) (Note 2) (Note 2) (Ta ≤ 70°C) (Ta = 85°C) (Ta ≤ 70°C) (Ta = 85°C) (Note 1) Symbol IF ΔIF / ΔTa IFPT VR Tj IOPH IOPL VO VCC ΔVO / ΔTa ΔVCC / ΔTa Tj f Topr Tstg Tsol BVS Rating 20 −0.36 1 5 125 −1.5 +1.5 35 24 35 24 −0.73 −0.73 125 25 −20~85 −55~125 260 2500 Unit mA mA / °C A V °C A A V V V / °C V / °C °C kHz °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Note 2: Note 3: Note 4: Note 5: Pulse width PW ≤ 1μs, 300pps Exporenential wavefom Exporenential wavefom, IOPH ≤ −1.0A( ≤ 2.5μs), IOPL ≤ +1.0A( ≤ 2.5μs) Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. A ceramic capacitor(0.1μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed 1cm. Recommended Operating Conditions Characteristic Input current, on Input voltage, off Supply voltage Peak output current Operating temperature (Note6) Symbol IF(ON) VF(OFF) VCC IOPH/IOPL Topr Min 7 0 15 ― −20 Typ. 8 Max 10 0.8 30 ±0.5 70 85 20 Unit mA V V A °C ― ― ― 25 Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 6: Input signal rise time(fall time) 0V VCC1 = +15V, VEE1 = −15V RL = 200Ω, VO < 0V VFHL VCC CS RS * All typical values are at Ta = 25°C (*1): Duration of IO time ≤ 50μs 3 2007-10-01 TLP250 Switching Characteristics (Ta = −20~70°C , unless otherwise specified) Characteristic Propagation delay time Output rise time Output fall time Common mode transient immunity at high level output Common mode transient immunity at low level output L→H H→L Symbol tpLH tpHL tr tf CMH 6 CML VCM = 600V, IF = 0mA VCC = 30V, Ta = 25°C 5000 ― ― V / μs VCM = 600V, IF = 8mA VCC = 30V, Ta = 25°C 5 IF = 8mA VCC1 = +15V, VEE1 = −15V RL = 200Ω Test Cir− cuit Test Condition Min ― ― ― ― −5000 Typ.* 0.15 0.15 ― ― ― Max 0.5 0.5 ― ― ― V / μs μs Unit All typical values are at Ta = 25°C Test Circuit 1 : IOPH 8 1 VCC 0.1μF IF A 4 IOPH V8-6 Test Circuit 2 : IOPL 8 1 0.1μF A 4 IOPL V6-5 VCC Test Circuit 3 : VOH 8 1 VCC1 0.1μF IF RL V VOH 4 Test Circuit 4 : VOL 8 1 0.1μF VF V 4 VEE1 RL VOL VCC1 VEE1 4 2007-10-01 TLP250 Test Circuit 5: tpLH, tpHL, tr tf 8 IF 0.1μF VO RL VO VCC1 IF tr tf VOH GND VOL 80% 80% 100Ω tpLH VEE1 tpHL Test Circuit 6: CMH, CML 8 1 SW A IF B VO 4 VCM + 0.1μF VCC 600V VCM 90% 10% tr tf SW :A(IF=8mA) CMH VO SW :B(IF=0) 3V 26V CHL CML = 480 (V) tr (μs) CMH = 480 (V) tf (μs) CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. 5 2007-10-01 TLP250 IF – V F 100 50 30 Ta = 25 °C -2.6 ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 1.4 1.8 2.0 -2.4 (mA) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 1.2 1.6 -2.2 Forward current IF -2.0 -1.8 -1.6 -1.4 0.1 0.3 0.5 1 3 5 10 30 Forward voltage VF (V) Forward current IF (mA) IF – Ta 40 40 VCC – Ta Allowable forward current IF (mA) 20 Allowable supply voltage VCC 20 30 (V) 30 20 10 10 0 0 0 0 40 60 80 100 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IOPH, IOPL – Ta PW ≦ 2.5 μs, f ≦ 15 KHz Allowable peak output current IOPH, IOPL (A) 2 1 0 0 20 40 60 80 100 Ambient Temperature Ta (°C) 6 2007-10-01 TLP250 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01
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