TLP251F_07

TLP251F_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP251F_07 - GaAâ„“As Ired & Photo−IC - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP251F_07 数据手册
TLP251F TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP251F Inverter for Air Conditioner Induction Heating Transistor Inverter Power MOSFET Gate Drive IGBT Gate Drive The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 8−lead DIP package. TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) • • • • • • • • Input threshold current: IF = 5mA (max.) Supply current: 11mA (max.) Supply voltage: 10~35V Output peak current: ±0.4A (max.) Switching time: tpHL, tpLH = 1μs (max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file no. E67349 Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no. 40011913 Maximum operating insulation voltage: 1140VPK Highest permissible over voltage: 6000VPK TOSHIBA Weight: 0.54g 11−10C402 Unit in mm (Note 1) When a EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ” • Structural parameter Creepage distance: 8.0mm (min.) Clearance: 8.0mm (min.) 1 2007-10-01 TLP251F Truth Table Tr1 Input LED On Off On Off Tr2 Off On Pin Configuration (top view) 1 2 3 4 8 7 6 Schematic ICC 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VO (output) 7: N.C. 8: VCC 8 IF 2 VF 3 (Tr 1) VCC 6 VO IO (Tr 2) GND 5 5 (Note 2 ) A 0.1μF bypass capacitor must be connected between pin 8 and 5. 2 2007-10-01 TLP251F RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-10-01
TLP251F_07
1. 物料型号: - 型号为TLP251F,由东芝(TOSHIBA)生产。

2. 器件简介: - TLP251F由一个GaAℓAs(砷化镓)发光二极管和一个集成光电探测器组成,适用于空调感应加热、晶体管逆变器、功率MOSFET门驱动、IGBT门驱动等应用。特别是,TLP251能够直接驱动低功率IGBT(约15A)。

3. 引脚分配: - 引脚配置(从顶部视图):1: N.C.(无连接),2: 阳极,3: 阴极,4: N.C.,5: GND,6: VO(输出),7: N.C.,8: VCC。

4. 参数特性: - 输入阈值电流:IF = 5mA(最大值) - 供电电流:11mA(最大值) - 供电电压:10~35V - 输出峰值电流:±0.4A(最大值) - 切换时间:tpHL, tpLH = 1μs(最大值) - 隔离电压:2500Vrms(最小值)

5. 功能详解: - TLP251F包含一个发光二极管和一个光电探测器,用于实现电气隔离和信号传输。它适用于驱动IGBT或功率MOSFET的门极电路。

6. 应用信息: - 该器件适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备,如原子能控制仪器、飞机或太空船仪器、交通信号仪器、燃烧控制仪器、医疗仪器、各种安全设备等。

7. 封装信息: - 该器件采用8引脚DIP封装。
TLP251F_07 价格&库存

很抱歉,暂时无法提供与“TLP251F_07”相匹配的价格&库存,您可以联系我们找货

免费人工找货