TLP2601(TP1,F)

TLP2601 TOSHIBA Photocoupler IRED & Photo−IC TLP2601 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer−Peripheral Interface Microprocessor System Interface Digital Isolation for A/D, D/A Conversion Direct Replacement for HCPL−2601 Unit: mm The TOSHIBA TLP2601 a photocoupler which combines an IRED as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/μs. • Input current thresholds: IF = 5mA (max) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) • Isolation voltage: 2500Vrms (min) • Switching speed: 10MBd • Common mode transient immunity: 1000V/μs (min) • Guaranteed performance over temp.: 0°C to 70°C • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service Pin Configuration (top view) No.5A File No.E67349 Truth Table (positive logic) Input Enable Output H H L L H H H L H L L 1 8 2 7 3 6 4 5 SHIELD Schematic ICC IF 2 H VF . 3 IO + 8 6 VCC VO SHIELD IE VE 7 5 GND A 0.01 to 0.1μF bypass capacitor must be connected between pins 8 and 5 (see Note 1) Start of commercial production 1985-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP2601 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, low level IFL 0 ― 250 μA Input current, high level IFH 6.3 (*) ― 20 mA Supply voltage**, output VCC 4.5 ― 5.5 V High level enable voltage VEH 2.0 ― VCC V Low level enable voltage VEL 0 ― 0.8 V N ― ― 8 ― Topr 0 ― 70 °C Fan out (TTL load) Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or less. **This item denotes operating ranges, not meaning of recommended operating conditions. Absolute Maximum Ratings (no derating required) LED Characteristic Symbol Rating Unit Forward current IF 20 mA Reverse voltage VR 5 V Diode power dissipation PD 100 mW △PD/°C -1.8 mW/°C (Ta ≥70°C) Tj 125 °C Output current IO 25 mA Output voltage VO −0.5 to 7 V Supply voltage (1 minute maximum) VCC 7 V VE 5.5 V Diode power dissipation derating Detector Junction Temperature Enable input voltage (not to exceed VCC by more than 500mV) Output power dissipation PC 40 mW ΔPC / °C -0.7 mW / °C Tj 125 °C Operating temperature range Topr −40 to 85 °C Storage Temperature range Tstg −55 to 125 °C Lead Solder Temperature (10 s) Tsol 260 °C Isolation voltage (R.H.≤ 60 %, AC 60 s) BVS 2500 Vrms 3540 Vdc Output Power dissipation derating (Ta ≥ 70°C) Junction Temperature (Note 10) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (**) 1.6 mm below seating plane. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP2601 Electrical Characteristics (Ta = 0°C to 70°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ. Max Unit High level output current IOH VCC = 5.5 V, VO = 5.5 V IF = 250 μA, VE = 2.0 V ― 1 250 μA Low level output voltage VOL VCC = 5.5 V, IF = 5 mA VE = 2.0 V, IOL(sinking) = 13 mA ― 0.4 0.6 V High level supply current ICCH VCC = 5.5 V, IF = 0 A, VE = 0.5 V ― 7 15 mA Low level supply current ICCL VCC = 5.5 V, IF = 10 mA, VE = 0.5 V ― 12 19 mA Low level enable current IEL VCC = 5.5 V, VE = 0.5 V ― −1.6 −2.0 mA High level enable current IEH VCC = 5.5 V, VE = 2.0 V ― −1 ― mA High level enable voltage VEH 2.0 ― ― Low level enable voltage VEL ― ― 0.8 Input forward voltage VF IF = 10 mA, Ta = 25 °C ― 1.65 1.75 V Input reverse breakdown voltage BVR IR = 10 μA, Ta = 25 °C 5 ― ― V Input capacitance CIN VF = 0 V, f = 1 MHz ― 45 ― pF IF = 10 mA ― −2.0 ― mV / °C (Note 11) ― V Input diode temperature coefficient ΔVF/ΔTA Input−output insulation leakage current II−O Relative humidity = 45 % Ta=25 °C, t = 5 s (Note 10) VI−O = 3000 Vdc, ― ― 1 μA Resistance (input−output) RI−O VI−O = 500 V, R.H.≤ 60 % (Note 10) 5×1010 1014 ― Ω Capacitance (input−output) CI−O f = 1 MHz ― 0.6 ― pF (Note 10) (**) All typ.values are at VCC = 5 V, Ta = 25 °C. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP2601 Switching Characteristics (Ta = 25°C, VCC = 5 V) Characteristic Symbol Propagation delay time to high output level tpLH Propagation delay time to low output level tpHL Output rise time (10−90%) tr Output fall time (90−10%) tf Propagation delay time of enable from VEH to VEL tELH Propagation delay time of enable from VEL to VEH tEHL Common mode transient immunity at high output level Test Circuit Test Condition 1 RL = 350 Ω, CL = 15 pF IF = 7.5 mA (Note 2), (Note 3), (Note 4)&(Note 5) RL = 350 Ω, CL = 15 pF IF = 7.5 mA VEH = 3.0 V VEL = 0.5 V (Note 6) & (Note 7) 2 VCM = 400 V RL = 350 Ω VO(min) = 2 V IF = 0 mA, CMH 3 Common mode transient immunity at low output level VCM = 400 V RL = 350 Ω VO(max) = 0.8 V IF = 7.5 mA, CML © 2019 Toshiba Electronic Devices & Storage Corporation 4 Min Typ. Max Unit ― 60 75 ns ― 60 75 ns ― 30 ― ns ― 30 ― ns ― 25 ― ns ― 25 ― ns 1000 10000 ― V/μs −1000 −10000 ― V/μs (Note 9) (Note 8) 2019-06-17 TLP2601 Test Circuit 1. 5V Pulse generator ZO = 50Ω tr = 5ns IF = 7.5mA Input IF IF = 3.75mA IF Monitoring node VOH tpLH Output VO 1.5V VOL 8 VCC 2 7 3 6 4 47Ω tpHL 1 5 GND 0.1μF Bypass tpHL and tpLH RL VO (*) CL Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. Pulse generator ZO = 50 Ω tr = 5ns 3.0V Input VE 7.5mA dc IF 1.5V tEHL VOH tELH Output VO 1.5V Input VE monitoring node 5V 1 VCC 8 2 7 3 6 4 VOL GND 5 0.1μF Bypass tELH and tEHL (*) CL RL VO Output monitoring node (*) CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 3. Transient Immunity and Typical Waveforms. VCM 90% tr tf IF 0V A B 5V VO VFF Switch at A: IF = 0mA VO VCC 8 2 7 3 6 4 Pulse gen. ZO = 50 Ω GND 5V 0.1μF Bypass 90% 10% 10% 1 400V RL VO 5 VCM VOL Switch at B: IF = 5mA © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP2601 I F – VF Forward voltage temperature coefficient ∆VF /∆Ta (mV/°C) Ta = 25°C 10 forward current 1 0.1 1.2 1.4 -2.0 -1.8 -1.6 VF (V) High level output current IOH (μA) RL=350Ω 1kΩ 4kΩ 2 3 Forward current 30 (mA) IF = 250μA 6 2 IF 4 IF 5 IOH – Ta 100 Ta = 25°C 1 10 3 (V) VCC = 5V 4 1 0.3 Forward current VO – IF 8 VO -2.2 1.8 1.6 Forward voltage Output voltage -2.4 -1.4 0.1 0.01 1.0 0 0 ∆VF / ∆Ta – IF -2.6 IF (mA) 100 50 VCC = 5.5V 30 VO = 5.5V 10 5 3 6 1 (mA) 0 10 20 30 40 50 60 70 Ambient temperature Ta (°C) VOL – Ta VO – IF 8 IF = 5mA Output voltage Low level output voltage VOL (V) RL=4kΩ Ta = 70°C 4 0°C 2 0 0 1 2 3 Forward current 4 IF 5 VCC = 5.5V 0.5 RL=350Ω 6 VO (V) VCC = 5V VE = 2V IOL=16mA 0.4 12.8mA 9.6mA 6.4mA 0.3 6 0.2 (mA) 0 20 40 80 60 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-17 TLP2601 tpHL, tpLH – IF 120 tpLH tpLH 100 tpLH 80 1kΩ 350Ω tpLH tpHL 60 Propagation delay time tpHL, tpLH (ns) Propagation delay time tpHL, tpLH (ns) RL= 4kΩ RL=4kΩ 100 350Ω 1kΩ 4kΩ 40 350Ω 1kΩ tpLH 80 350Ω 60 1kΩ tpHL 4kΩ 40 Ta = 25°C 20 5 9 7 11 13 Forward current 15 IF 17 VCC = 5 V 20 VCC = 5V 0 tpHL, tpLH – Ta 120 IF = 7.5mA 19 0 0 (mA) 10 20 30 40 50 60 70 60 70 Ambient temperature Ta (°C) 320 tEHL, tELH – Ta tr, tf – Ta 80 VCC = 5V IF = 7.5mA 70 RL= 4kΩ tf 280 1kΩ tf 60 350Ω tf 40 350Ω tr 20 0 0 VEH = 3V RL= 4kΩ tELH IF = 7.5mA 60 80 Enable propagation delay time tEHL, tELH (ns) Rise, fall time tr, tf (ns) 300 VCC = 5V 1kΩ 4kΩ 10 20 30 40 50 60 50 40 1kΩ tELH 30 350Ω tELH 350Ω 20 70 tEHL 1kΩ 4kΩ 10 Ambient temperature Ta (°C) 0 0 10 20 30 40 50 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-17 TLP2601 Notes 1. The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1 μF capacitor of larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package VCC and GND pins of each device. 2. tpHL ･ Propagation delay is measured from the 3.75 mA level on the low to high transition of the input current pulse to the 1.5 V level on the high to low transition of the output voltage pulse. 3. tpLH ･ Propagation delay is measured from the 3.75 mA level on the high to low transition of the input current pulse to the 1.5 V level on the low to high transition of the output voltage pulse. 4. tf ･ Fall time is measured from the 10 % to 90 % levels of the high to low transition on the output pulse. 5. tr ･ Rise time is measured from the 90 % to 10 % levels of the low to high transition on the output pulse. 6. tEHL ･ Enable input propagation delay is measured from the 1.5 V level on the low to high transition of the input voltage pulse to the 1.5 V level on the high to low transition of the output voltage pulse. 7. tELH ･ Enable input propagation delay is measured from the 1.5 V level on the high to low transition of the input voltage pulse to the 1.5 V level on the low to high transition of the output voltage pulse. 8. CML ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e. VOUT < 0.8 V). Measured in volts per microsecond (V / μs). 9. CMH ･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the high state (i.e. VOUT > 2.0 V). Measured in volts per microsecond (V / μs). Volts/microsecond can be translated to sinusoidal voltages: V / μs = (dv CM ) dt Max. = fCM VCM (p.p.) Example: VCM = 318 Vpp when fCM = 1 MHz using CML and CMH = 1000 V / μs data sheet specified minimum. 10. ･ Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. 11. Enable input ･ No pull up resistor required as the device has an internal pull up resistor. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-17 TLP2601 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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