TLP2631

TLP2631 TOSHIBA photocoupler GaAℓAs IRed & Photo IC TLP2631 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer-Peripheral Interface Microprocessor System Iinterface Digital Isolation For A / D, D / A Conversion The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8-lead DIP. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V / μs. Unit in mm • • • • • • Input current threshold: IF = 5mA(max.) Switching speed: 10MBd(typ.) Common mode transient immunity: ±1000V / μs(min.) Guaranteed performance over temperature: 0~70°C Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.54g 11−10C4 Truth Table (positive logic) Input H L Output L H Pin Configuration (top view) 1 2 3 4 GND Shield VCC 8 7 6 5 1 : Anode 1 2 : Cathode 1 3 : Cathode 2 4 : Anode 2 5 : GND 6 : VO2 (Output 2) 7 : VO1 (Output 1) 8 : VCC A 0.01 to 0.1μF bypass capacitor must connected between pins 8 and 5(see Note 1). Schematic + VF1 − + VF2 − I 1 F1 2 4 3 5 GND IF2 IO2 6 Shield ICC IO1 8 7 VCC VO1 VO2 1 2007-10-01 TLP2631 Absolute Maximum Ratings (no derating required up to 70°C) Characteristic Forward current (each channel) LED Symbol IF IFP VR IO VO VCC Rating 20 30 5 16 −0.5~7 Unit mA mA V mA V V Pulse forward current (each channel)* Reverse voltage (each channel) Output current (each channel) Output voltage (each channel) Detector Supply voltage (1 minute maximum) Output collector power dissipation (each channel) 7 PO Tstg Topr Tsol 40 −55~125 −40~85 mW °C °C °C Operating temperature range Storage temperature range Lead soldering temperature (10s)** Isolation voltage (AC, 1 min., R.H.≤ 60%, Note 3) 260 BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * t ≤ 1 msec duration. ** 2mm below seating plane. Recommended Operating Conditions Characteristic Input current, low level, each channel Input current, high level, each channel Supply voltage**, output Fan out (TTL load, each channel) Operating temperature Symbol IFL IFH VCC N Topr Min. 0 6.3* 4.5 ― 0 Typ. ― ― 5 ― ― Max. 250 20 5.5 8 70 °C Unit μA mA V Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. *6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less. **This item denotes operating ranges, not meaning of recommended operating conditions. 2 2007-10-01 TLP2631 Electrical Characteristics (Ta = 0~70°C unless otherwise noted) Characteristic Input forward voltage (each channel) Input diode temperature coefficient (each channel) Input reverse breakdown voltage (each channel) Input capacitance (each channel) High level output current (each channel) Low level output voltage (each channel) High level supply current (both channels) Low level supply current (both channels) Isolation voltage Capacitance (input−output) Input−input leakage current Resistance (input−input) Capacitance (input−input) Symbol VF ΔVF / ΔTa BVR CT IOH VOL ICCH ICCL RS CS II−I RI−I CI−I Test Condition IF = 10mA, Ta = 25°C IF = 10mA IR = 10μA, Ta = 25°C VF = 0, f = 1MHz VCC = 5.5V, VO = 5.5V IF = 250μA VCC = 5.5V, IF = 5mA IOL(sinking) = 13mA VCC = 5.5V, IF = 0 VCC = 5.5V, IF = 10mA VS = 500V, R.H. ≤ 60% f = 1MHz R.H. ≤ 60%, t = 5s VI−I = 500V VI−I = 500V f = 1MHZ (Note 3) (Note 3) (Note 6) (Note 6) (Note 6) Min. ― ― 5 ― ― ― ― ― 5×10 ― ― ― ― 10 Typ. * 1.65 −2.0 Max. 1.75 ― ― ― 250 0.6 30 38 ― ― ― ― ― Unit V mV / °C V pF μA V mA mA Ω ― 45 1 0.4 14 24 10 14 0.6 0.005 10 11 pF μA Ω 0.25 pF * All typical values are at VCC = 5V, Ta = 25°C. 3 2007-10-01 TLP2631 Switching Characteristics (Ta = 25°C, VCC = 5V) Characteristic Propagation delay time to low output level Propagation delay time to high output level Output rise time, output fall time (10~90%) Common mode transient immunity at high output level Common mode transient immunity at low output level Symbol tpHL tpLH tr, tf Test Circuit 1 1 1 Test Condition IF = 0→7.5mA, RL = 350Ω CL = 15pF (each channel) IF = 7.5mA→0, RL = 350Ω CL = 15pF (each channel) IF = 0 7.5mA, RL = 350Ω CL = 15pF (each channel) IF = 0, RL = 350Ω VCM = 400V, VO(min.) = 2V (each channel, Note 4) IF = 7.5mA, RL = 350Ω VCM = 400V VO(max.) = 0.8V (each channel, Note 5) Min. ― ― ― Typ. 60 60 30 Max. 75 75 ― Unit ns ns ns CMH 2 1000 10000 ― V / μs CML 2 −1000 −10000 ― V / μs (Note 1) 2mm below seating plane (Note 2) The VCC supply voltage to each TLP2631 isolator must be bypassed by a 0.01μF capacitor or larger. This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package VCC and GND pins each device. (Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. (Note 4) CMH･the maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e., VOUT > 2.0V). Measured in volts per microsecond (V / μs). Volts/ microsecond can be translated to sinusoidial voltages: V / μs = (dVCM) Max. = fCM VCM (p.p.) dt Example: VCM = 319Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified minimum. (Note 5) CML･the maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., VOUT > 0.8V). Measured in volts per microsecond (V / μs). (Note 6) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together. 4 2007-10-01 TLP2631 Test Circuit 1. tpHL and tpLH 5V 1 2 100Ω Pulse input PW = 10μs Duty cycle = 1/10 IF Monitor VCC 8 0.1μF IF RL 350Ω CL VO Monitor VO tr tf 7.5mA 3.75mA 0mA 5V 7 6 GND 5 3 4 4.5V * CL is approximately 15pF which includes probe and stray wiring capacitance. tpHL tpLH 1.5V 0.5V VOL Test Circuit 2. Transient Immunity And Typical Waveforms. IF 1 2 A B VFF 3 4 VCC 8 0.1μF 5V RL 350Ω VO Monitor VCM 90% 10% tr tf 400V 7 6 GND 5 VCM 0V CL VO (IF = 0mA) 5V 2V 0.8V + ZO = 50Ω CMH = 320(V) 320(V) , CML = t r (μs ) t r (μs ) − VO (IF = 7.5mA) Pulse generator VOL * CL is approximately 15pF which includes probe and stray wiring capacitance. 5 2007-10-01 TLP2631 IF – VF 100 Ta = 25 °C −2.6 ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) −2.4 Forward current IF (mA) 10 −2.2 1 −2.0 −1.8 0.1 −1.6 0.01 1.0 1.2 1.4 1.6 1.8 2.0 −1.4 0.1 0.3 1 3 10 30 50 Forward voltage VF (V) Forward current IF (mA) VO – IF 8 VCC = 5 V IOH – Ta 100 IF = 250 μA VCC = 5.5 V VO = 5.5 V IOH (μA) High level output current 6 Ta = 25 °C 50 30 Output voltage VO (V) 6 4 RL = 350Ω 1 kΩ 4 kΩ 10 2 5 3 0 0 1 2 3 4 5 Forward current IF (mA) 1 0 10 20 30 40 50 60 70 Ambient temperature Ta (°C) 10 VO – IF VCC = 5 V RL = 350Ω VOL – Ta IF = 5 mA VCC = 5.5 V VE = 2 V 8 RL = 4kΩ (V) VOL (V) 0.5 Low level output voltage IOL=16mA 0.4 12.8mA 9.6mA 6.4mA 0.3 Output voltage VO 6 Ta = 70°C 4 0°C 2 0.2 0 0 0 1 2 3 4 5 6 20 40 60 80 Ambient temperature Ta (°C) Forward current IF (mA) 6 2007-10-01 TLP2631 tpHL, tpLH – IF 120 tpLH 100 RL = 4kΩ 100 120 tpHL, tpLH – Ta RL = 4kΩ tpLH 350kΩ 1 kΩ 80 tpLH 350Ω 60 tpHL 40 VCC = 5 V IF = 7.5 mA 1kΩ 4kΩ Propagation delay time tpHL, tpLH (ns) 80 tpLH tpHL 1kΩ 350Ω 350Ω 1kΩ 4kΩ Ta = 25 °C VCC = 5 V 60 40 20 Propagation delay time tpHL, tpLH (ns) 20 19 0 5 7 9 11 13 15 17 0 0 Forward current IF (mA) 10 20 30 40 50 60 70 Ambient temperature Ta (°C) tr, tf – Ta 320 VCC = 5 V IF = 7.5 mA 300 RL = 4kΩ (ns) tf 280 80 tf Rise, fall time tr, tf 1kΩ 60 tf 350Ω 40 20 tr 350Ω 1kΩ 4kΩ 0 0 10 20 30 40 50 60 70 Ambient temperature Ta (°C) 7 2007-10-01 TLP2631 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01