TLP2631TP1F

TLP2631 TOSHIBA photocoupler IRED & Photo IC TLP2631 Isolated Line Receiver Simplex / Multiplex Data Transmission Computer-Peripheral Interface Microprocessor System Interface Digital Isolation for A / D, D / A Conversion Unit: mm The TOSHIBA TLP2631 dual photocoupler consists of a pair of infrared emitting diode and integrated high gain, high speed photodetector. This unit is 8-lead DIP. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000 V/μs. • Input current threshold: IF = 5 mA (max) • Switching speed: 10MBd (typ.) • Common mode transient immunity: ±1000 V/μs (min) • Guaranteed performance over temperature: 0 to 70°C • Isolation voltage: 2500 Vrms (min) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Truth Table (positive logic) Input Output H L L H Pin Configuration (top view) 1 Schematic + VF1 − + VF2 − 1 IF1 Shield 8 IO1 2 4 IF2 IO2 7 6 VCC 8 2 7 3 6 4 ICC VCC GND Shield 5 1 : Anode 1 2 : Cathode 1 3 : Cathode 2 4 : Anode 2 5 : GND 6 : VO2 (Output 2) 7 : VO1 (Output 1) 8 : VCC VO1 VO2 3 5 GND A 0.01 to 0.1μF bypass capacitor must be connected between pins 8 and 5(see Note 1). Start of commercial production 1986-03 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP2631 Absolute Maximum Ratings (no derating required up to 70°C) Symbol Rating Unit Forward current (each channel) IF 20 mA Pulse forward current (each channel)* IFP 30 mA Reverse voltage (each channel) VR 5 V Input power dissipation(each channel) PD 25 mW ΔPD/°C -0.45 mW/°C Output current (each channel) IO 16 mA Output voltage (each channel) VO −0.5 to 7 V Supply voltage (1 minute maximum) VCC 7 V Output collector power dissipation (each channel) PO 40 mW ΔPO/°C -0.75 mW/°C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s)** Tsol 260 °C BVS 2500 Vrms LED Characteristic Detector Input power dissipation derating (Ta ≥ 70°C) (each channel) Output power dissipation derating (each channel) Isolation voltage (AC, 60 s, R.H.≤ 60 %, Ta=25°C) (Ta ≥ 70°C) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * t ≤ 1 msec duration. ** 2 mm below seating plane. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, low level, each channel IFL 0 ― 250 μA Input current, high level, each channel IFH 6.3* ― 20 mA Supply voltage** VCC 4.5 5 5.5 V N ― ― 8 Topr 0 ― 70 Fan out (TTL load, each channel) Operating temperature °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. * 6.3 mA is a guard banded value which allows for at least 20 % CTR degradation. Initial input current threshold value is 5.0 mA or less. ** This item denotes operating ranges, not meaning of recommended operating conditions. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP2631 Electrical Characteristics (Ta = 0 to 70°C unless otherwise noted) Characteristic Input forward voltage (each channel) Symbol VF Input diode temperature coefficient (each channel) ΔVF / ΔTa Input reverse breakdown voltage (each channel) BVR Test Condition Min Typ. * Max Unit IF = 10 mA, Ta = 25 °C ― 1.65 1.75 V IF = 10 mA ― −2.0 ― mV / °C IR = 10 μA, Ta = 25 °C 5 ― ― V Input capacitance (each channel) CT VF = 0 V, f = 1 MHz ― 45 ― pF High level output current (each channel) IOH VCC = 5.5 V, VO = 5.5 V IF = 250 μA ― 1 250 μA Low level output voltage (each channel) VOL VCC = 5.5 V, IF = 5 mA IOL(sinking) = 13 mA ― 0.4 0.6 V High level supply current (both channels) ICCH VCC = 5.5 V, IF = 0 mA ― 14 30 mA Low level supply current (both channels) ICCL VCC = 5.5 V, IF = 10 mA ― 24 38 mA 5×1010 1014 ― Ω ― 0.6 ― pF ― 0.005 ― μA Isolation voltage RS VS = 500 V, R.H. ≤ 60 % (Note 3) Capacitance (input−output) CS f = 1 MHz (Note 3) Input−input leakage current II−I R.H. ≤ 60 %, t = 5 s VI−I = 500 V (Note 6) Resistance (input−input) RI−I VI−I = 500 V (Note 6) ― 1011 ― Ω Capacitance (input−input) CI−I f = 1 MHz (Note 6) ― 0.25 ― pF * All typical values are at VCC = 5 V, Ta = 25 °C. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP2631 Switching Characteristics (Ta = 25°C, VCC = 5V) Symbol Test Circuit Propagation delay time to low output level tpHL 1 Propagation delay time to high output level tpLH Output rise time, output fall time (10 to 90%) tr, tf Characteristic Common mode transient immunity at high output level Common mode transient immunity at low output level CMH CML Test Condition Min Typ. Max Unit IF = 0→7.5 mA, RL = 350 Ω CL = 15 pF (each channel) ― 60 75 ns 1 IF = 7.5→0 mA, RL = 350 Ω CL = 15 pF (each channel) ― 60 75 ns 1 IF = 0 7.5 mA, RL = 350 Ω CL = 15 pF (each channel) ― 30 ― ns 2 IF = 0 mA, RL = 350 Ω VCM = 400 V, VO(min.) = 2 V (each channel, Note 4) 1000 10000 ― V / μs 2 IF = 7.5 mA, RL = 350 Ω VCM = 400 V VO(max.) = 0.8 V (each channel, Note 5) −1000 −10000 ― V / μs (Note 1) 2mm below seating plane (Note 2) The VCC supply voltage to each TLP2631 isolator must be bypassed by a 0.1 μF capacitor or larger. This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package VCC and GND pins each device. (Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. (Note 4) CMH･the maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e. VOUT > 2.0 V). Measured in volts per microsecond (V / μs). Volts/ microsecond can be translated to sinusoidal voltages: V / μs = (dVCM) Max. = fCM VCM (p.p.) dt Example: VCM = 319 Vpp when fCM = 1 MHz using CML and CMH = 1000V / μs data sheet specified minimum. (Note 5) CML･the maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e. VOUT < 0.8 V). Measured in volts per microsecond (V / μs). (Note 6) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-17 TLP2631 Test Circuit 1. tpHL and tpLH 5V 100Ω IF Monitor VCC 1 2 7 3 6 4 GND 5 7.5mA 3.75mA 0mA IF 8 0.1μF Pulse input PW = 10μs Duty cycle = 1/10 RL 350Ω tr tf 5V VO Monitor CL VO tpHL * CL is approximately 15pF which includes probe and stray wiring capacitance. 4.5V 1.5V 0.5V VOL tpLH Test Circuit 2. Transient Immunity and Typical Waveforms VCC 1 2 B A VFF 7 3 6 4 GND 5 + VCM 5V 8 0.1μF IF CL RL 350Ω 10% tr VO Monitor VO (IF = 0mA) − tf 0V 5V 2V 0.8V VO Pulse generator VOL (IF = 7.5mA) ZO = 50Ω CMH = 400V 90% VCM 320(V) 320(V) , CML = t r (μs) t r (μs) * CL is approximately 15pF which includes probe and stray wiring capacitance. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP2631 I F – VF Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) Ta = 25 °C 10 1 0.1 0.01 1.0 1.2 1.4 VF RL = 350Ω 1kΩ 4kΩ 2 2 3 Forward current −1.6 (μA) 50 30 High level output current (V) Output voltage VO 6 1 −1.8 0.3 4 IF 1 5 3 10 IF (mA) 30 50 IOH – Ta 100 Ta = 25 °C 0 0 −2.0 Forward current VCC = 5 V 4 −2.2 (V) VO – IF 8 −2.4 −1.4 0.1 2.0 1.8 1.6 Forward voltage ΔVF / ΔTa – IF −2.6 IOH Forward current IF (mA) 100 IF = 250 μA VCC = 5.5 V VO = 5.5 V 10 5 3 6 1 (mA) 10 0 20 30 40 50 60 70 Ambient temperature Ta (°C) VOL – Ta VO – IF 10 IF = 5 mA (V) RL = 4kΩ Output voltage VO (V) 8 RL = 350Ω Low level output voltage VOL VCC = 5 V 6 Ta = 70°C 4 0°C 2 1 2 3 Forward current 4 IF 5 6 VE = 2 V IOL=16mA 0.4 12.8mA 9.6mA 6.4mA 0.3 0.2 0 0 VCC = 5.5 V 0.5 0 20 40 60 80 Ambient temperature Ta (°C) (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 6 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP2631 tpHL, tpLH – IF 120 RL = 4kΩ RL = 4kΩ tpLH tpLH 100 tpLH 1kΩ tpHL 350Ω 350Ω 80 60 Propagation delay time tpHL, tpLH (ns) Propagation delay time tpHL, tpLH (ns) 100 1kΩ 4kΩ 40 350kΩ 1kΩ tpLH 80 350Ω 60 1kΩ 4kΩ tpHL 40 Ta = 25 °C 20 0 tpHL, tpLH – Ta 120 VCC = 5 V 5 7 9 11 13 Forward current 15 IF VCC = 5 V 20 17 19 0 (mA) IF = 7.5 mA 0 10 20 30 40 50 60 70 Ambient temperature Ta (°C) 320 tr, tf – Ta VCC = 5 V IF = 7.5 mA Rise, fall time tr, tf (ns) 300 RL = 4kΩ tf 280 80 tf 1kΩ tf 350Ω tr 350Ω 60 40 20 0 0 1kΩ 4kΩ 10 20 30 40 50 60 70 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-17 TLP2631 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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