TLP285(TP,F)

TLP285 TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TLP285 Power Supplies Programmable Controllers Hybrid ICs Unit: mm The Toshiba TLP285 consists of photo transistor, optically coupled to an infrared emitting diode. TLP285 is housed in the SOP4 package, very small and thin coupler. Since TLP285 is guaranteed wide operating temperature (Ta = -55 to 110 ˚C) and high isolation voltage (3750 Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.  Collector-Emitter Voltage : 80 V (min)  Current Transfer Ratio Rank GB : 50% (min) : 100% (min)  Isolation Voltage : 3750 Vrms (min)  Guaranteed performance over -55 to 110 ˚C  UL-recognized : UL 1577, File No.E67349  cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349  VDE-approved : EN 60747-5-5 (Note 1) Pin Configuration (top view) Note 1: When a VDE approved type is needed, please designate the Option(V4). Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness TOSHIBA 11-3A1 Weight: 0.05 g (typ.) 1 4 2 3 1: ANODE 2: CATHODE 3: EMITTER 4: COLLECTOR 5.0 mm (min) 5.0 mm (min) 0.4 mm (min) Start of commercial production 2008-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP285 Current Transfer Ratio TYPE TLP285 Classification (Note1) Current Transfer Ratio (%) (IC/IF) IF = 5 mA, VCE = 5 V, Ta = 25°C Min Max Marking of Classification Blank 50 600 Blank,Y■, YE, G, G■, GR, B, BL, GB Rank Y 50 150 YE, Y■ Rank GR 100 300 GR, G, G■ Rank BL 200 600 BL, B Rank GB 100 600 GB, GR, G, G■, BL, B Rank YH 75 150 Y■ Rank GRL 100 200 G Rank GRH 150 300 G■ Rank BLL 200 400 B Note1: Ex. rank GB: TLP285 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP285 (GB): TLP285 © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP285 Absolute Maximum Ratings (Ta = 25°C) SYMBOL RATING UNIT Forward Current IF(RMS) 50 mA Forward Current Derating (Ta ≥ 75°C) ∆IF/°C -1.0 mA/°C IFP 1 A Reverse Voltage VR 5 V Diode power dissipation PD 100 mW ∆PD/°C -2.0 mW/°C Tj 125 °C Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 7 V IC 50 mA CHARACTERISTIC LED Pulse Forward Current (Note 1) Diode power dissipation derating (Ta ≥ 75°C) DETECTOR Junction Temperature Collector Current Collector Power Dissipation PC 150 mW ∆PC/°C -1.5 mW/°C Junction Temperature Tj 125 °C Operating Temperature Range Topr -55 to 110 °C Storage Temperature Range Tstg -55 to 125 °C Lead Soldering Temperature (10 s) Tsol 260 °C Total Package Power Dissipation PT 200 mW ∆PT/°C -2.0 mW/°C BVS 3750 Vrms Collector Power Dissipation Derating (Ta ≥ 25°C) Total Package Power Dissipation Derating (Ta ≥ 25°C) Isolation Voltage (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 100 μs, frequency 100 Hz Note 2: AC, 60 s, R.H.≤60 % Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. Electrical Characteristics (Ta = 25°C) DETECTOR LED CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0 V, f = 1 MHz — 30 — pF Collector-Emitter Breakdown Voltage V(BR)CEO IC = 0.5 mA 80 — — V Emitter-Collector Breakdown Voltage V(BR)ECO IE = 0.1 mA 7 — — V — 0.01 (2) 0.1 (10) μA — 2 (4) 50 (50) μA — 10 — pF Collector Dark Current (Note 2) Capacitance (Collector to Emitter) ICEO CCE VCE = 48 V, Ambient Light Below (100 ℓx) VCE = 48 V, Ta = 85 °C Ambient Light Below (100 ℓx) (Note 1) (Note 1) V = 0 V, f = 1 MHz Note 1: Irradiation to marking side using standard light bulb. Note 2: Because of the construction, leak current might be increased by ambient light. Please use photocoupler with less ambient light. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP285 Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Current Transfer Ratio Saturated CTR Collector-Emitter Saturation Voltage IC/IF IC/IF(sat) TEST CONDITION IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA VCE(sat) IC = 0.2 mA, IF = 1 mA Rank GB OFF-State Collector Current IC(off) VF = 0.7 V, VCE = 48 V MIN TYP. MAX UNIT 50 — 600 100 — 600 — 60 — 30 — — — — 0.4 — 0.2 — — — 0.4 — — 10 μA MIN TYP. MAX UNIT — 0.8 — pF 1×1012 1014 — Ω 3750 — — Vrms MIN TYP. MAX UNIT — 2 — — 3 — — 3 — — 3 — — 2 — — 25 — — 40 — % % V Isolation Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Capacitance (Input to Output) CS VS = 0 V, f = 1 MHz Isolation Resistance RS VS = 500 V, R.H.≤60 % Isolation Voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Rise Time tr Fall Time tf Turn-On Time ton Turn-Off Time toff Turn-On Time tON Storage Time ts Turn-Off Time tOFF TEST CONDITION VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) μs μs Fig.1: Switching Time Test Circuit © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-17 TLP285 I F - Ta P C - Ta I F (mA) 100 200 180 80 Allowable collector power Dissipation PC (mW) 160 Allowable forward current 60 40 20 140 120 100 80 60 40 20 0 -20 0 20 40 60 100 0 120 -20 60 80 100 IF-VF 120 100 Pulse Width IF (mA) IFP 40 IFP-DR ≤100μs Ta=25˚C 500 Forward current 300 100 50 30 10 100˚C 75˚C 50˚C 25˚C 0˚C -25˚C -50˚C 1 0.1 10 10-1 10-2 10-3 0.6 100 Duty cycle ratio DR 0.8 1 1.2 1.4 Forward voltage VF ∆ V F / ∆ Ta - I F 1.6 (V) IFP – VFP -3.2 -2.8 (mA) -2.4 IFP 1000 -2 Pulse forward current Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) 20 Ambient temperature Ta (˚C) 1000 Pulse forward current 0 Ambient temperature Ta (˚C) 3000 (mA) 80 -1.6 -1.2 -0.8 -0.4 0.1 0.5 1 Forward current 5 10 100 10 Pulse width≤10μs Repetitive Frequency=100Hz Ta=25°C 1 0.6 50 IF (mA) 1 1.4 1.8 2.2 Pulse forward voltage VFP 2.6 3 (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP285 IC-VCE IC-VCE 30 PC (max) Ta=25˚C Collector current IC (mA) Collector current IC (mA) 50 40 50 30 30 20 15 20 10 10 IF=5mA 0 0 5 Ta=25˚C 25 20 50 30 15 20 15 10 10 5 5 IF=2mA 0 Collector-emitter voltage Collector-emitter voltage VCE (V) IC-IF VCE (V) I C E O - Ta 101 (mA) ID (ICEO) (μA) 100 10 SAMPLE A Collector dark current Collector current IC 1 0.5 0 10 SAMPLE B 1 VCE=10V VCE=5V VCE=0.4V 0.1 0.1 1 10 Forward current IF (mA) 100 10-1 VCE=48V -2 10 24V 10V 5V 10-3 10-4 0 100 20 40 60 80 100 120 Ambient temperature Ta (°C) IC/IF -IF Current transfer ratio IC / IF (%) 1000 VCE=10V VCE=5V VCE=0.4V SAMPLE A 100 SAMPLE B 10 0.1 1 10 Forward current IF (mA) 100 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-17 TLP285 V C E ( s a t ) - Ta I C - Ta 100 0.28 25 0.2 (mA) 0.16 IC Collector current collector-Emitter saturation Voltage VCE(sat) (V) 0.24 0.12 0.08 IF=8mA, IC=2.4mA 0.04 10 10 5 1 1 IF=0.5mA 0.1 IF=1mA, IC=0.2mA VCE=5V 0 0.01 -40 -20 0 20 40 60 80 100 120 -40 Ambient temperature Ta (°C) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) S wi t c h i n g t i m e - R L S wi t c h i n g t i m e - Ta 1000 100 Ta=25˚C IF=16mA tOFF VCC=5V tOFF 100 Switching time (μs) Switching time (μs) 120 ts 10 ts 10 tON 1 IF=16mA VCC=5V RL=1.9kΩ tON 0.1 1 1 10 -60 100 -40 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-17 TLP285 Soldering and Storage 1. Soldering Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ∙Temperature profile example of lead (Pb) solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) ∙Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) ・Please preheat it at 150°C between 60 and 120 seconds. ・Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-17 TLP285 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-17 TLP285 Embossed-Tape Packing (TP) Specification for Mini-Flat Couplers 1. Applicable Package Package Product Type SOP4 Mini-Flat Coupler 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example) TLP285(GB-TP, F) [[G]]/RoHS COMPATIBLE (Note 1) Tape type CTR rank Device name Note 1: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Tape Dimensions 3.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 2. Tape feed Figure 2 Device Orientation 3.2 Tape Packing Quantity: 2500 devices per reel 3.3 Empty Device Recesses Are as Shown in Table 1. Table 1 Empty Device Recesses Standard Occurrences of 2 or more successive empty device recesses Single empty device recesses 0 device 6 device (max.) per reel Remarks Within any given 40-mm section of tape, not including leader and trailer Not including leader and trailer 3.4 Start and End of Tape The start of the tape has 50 or more empty holes. The end of tape has 50 or more empty holes and two empty turns only for a cover tape. © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-06-17 TLP285 3.5 Tape Specification (1) Tape material: Plastic (protection against electrostatics) (2) Dimensions: The tape dimensions are as shown in Figure 3 and table 2. Unit: mm 2.0 ± 0.1 +0.1 φ1.5 −0 F G K0 2.5 ± 0.2 12.0 ± 0.3 B D E 0.3 ± 0.05 A φ1.6 ± 0.1 Figure 3 Tape Forms Table 2 Tape Dimensions Unit: mm Unless otherwise specified: ±0.1 Symbol Dimension Remark A 3.1 ― B 7.5 ― D 5.5 Center line of indented square hole and sprocket hole E 1.75 F 8.0 G 4.0 K0 2.3 Distance between tape edge and hole center Cumulative error +0.1 -0.3 (max) per 10 feed holes Cumulative error +0.1 (max) per 10 feed holes -0.3 Internal space © 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-06-17 TLP285 3.6 Reel (1) Material: Plastic (2) Dimensions: The reel dimensions are as shown in Figure 4 and Table 3. Table 3 Reel Dimensions E W1 A C U B Unit: mm Symbol Dimension A Φ330 ±2 B Φ80 ±1 C Φ13 ±0.5 E 2.0 ±0.5 U 4.0 ±0.5 W1 13.5 ±0.5 W2 17.5 ±1.0 W2 Figure 4 Reel Form 4. Packing Packed in a shipping carton. 5. Label Indication The carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name. 6. Ordering Method When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as shown in the following example. (Example) TLP285(GB-TP,F) 2500 pcs Quantity (must be a multiple of 2500) [[G]]/RoHS COMPATIBLE (Note 1) Tape type CTR rank Device name Note 1 : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. © 2019 Toshiba Electronic Devices & Storage Corporation 12 2019-06-17 TLP285 EN 60747-5-5 Option (V4) Specification Types : TLP285 (Note 1) Type designations for “option: (V4)”, which are tested under EN 60747 requirements. Ex.: TLP285 (V4-GB-TP,F) V4 : EN 60747 option GB : CTR rank type TP : Standard tape & reel type F : [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. Ex.: TLP285 (V4-GB-TP,F) → TLP285 Note 2: Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification I-IV I-III for rated mains voltage ≤ 150Vrms for rated mains voltage ≤ 300Vrms Climatic classification ― 55 / 110 / 21 ― 2 ― VIORM 707 Vpk Input to output test voltage, Method A Vpr=1.6 × VIORM, type and sample test tp=10s, partial discharge