TLP290(BL-TP,SE

TLP290(SE TOSHIBA Photocoupler IRED & Photo-Transistor TLP290(SE Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290(SE consist of photo transistor, optically coupled to two infrared emitting diode connected inverse parallel, and can operate directly by AC input current. The TLP290(SE is housed in the very small and thin SO4 package. Since TLP290(SE are guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. • Collector-Emitter voltage : 80 V (min) • Current transfer ratio Rank GB : 50% (min) : 100% (min) TOSHIBA 11-3C1 Weight: 0.05 g (typ.) : 3750 Vrms (min) • Isolation voltage • Guaranteed performance over : -55 to 110 ˚C • UL-recognized : UL 1577, File No.E67349 • cUL-recognized : CSA Component Acceptance Service No.5A, • VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1) • CQC-approved : GB4943.1, GB8898 Japan and Thailand Factory Pin Configuration File No.E67349 Note 1 : When a VDE approved type is needed, please designate the Option (V4). TLP290 1 4 2 3 1: Anode Cathode 2: Cathode Anode 3: Emitter 4: Collector Construction Mechanical Rating Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) Start of commercial production 2012-02 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-05-20 TLP290(SE Current Transfer Ratio (Unless otherwise specified, Ta = 25°C) TYPE TLP290 Classification (Note1) Current Transfer Ration (%) (IC / IF) Marking of Classification IF = 5 mA, VCE = 5 V, Ta = 25°C Min Max Blank 50 600 Blank, YE, GR, BL, GB Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 600 GB Rank BL 200 600 BL Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP290(GB,SE For safety standard certification, however, specify the part number alone. (e.g.) TLP290(GB,SE: TLP290 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C) Characteristic Symbol Note Rating Unit R.M.S. forward current IF(RMS) ±50 mA Input forward current derating (Ta ≥ 90°C) ΔIF /ΔTa -1.5 mA /°C ±1 A IFP Input power dissipation PD 100 mW ΔPD/ΔTa -3.0 mW/°C Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation PC 150 mW ΔPC /ΔTa -1.5 mW /°C Tj 125 °C Operating temperature range Topr -55 to 110 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 200 mW ΔPT /ΔTa -2.0 mW /°C 3750 Vrms LED Input forward current (pulsed) Input power dissipation derating (Ta ≥ 90°C) Detector Junction temperature Collector power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) BVS Isolation voltage (Note 2) (Note3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width ≤ 100 μs, frequency 100 Hz Note3: AC, 60 s., R.H.≤ 60 %, Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-20 TLP290(SE Electrical Characteristics (Unless otherwise specified, Ta = 25°C) Detector LED Characteristic Symbol Test Condition Input forward voltage VF IF = ±10 mA Input capacitance CT V = 0 V, f = 1 MHz Min Typ Max 1.1 1.25 1.4 V - 60 - pF Unit Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 - - V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V VCE = 48 V, - 0.01 0.08 μA VCE = 48 V, Ta = 85 °C - 2 50 μA V = 0 V, f = 1 MHz - 10 - pF Unit Dark current ICEO Collector-emitter capacitance CCE Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage MIn Typ. Max 50 - 600 100 - 600 - 60 - 30 - - IC = 2.4 mA, IF = ±8 mA - - 0.3 IC = 0.2 mA, IF = ±1 mA - 0.2 - - - 0.3 - - 10 μA 0.33 - 3 - Symbol IC / IF IC / IF (sat) VCE (sat) Test Condition IF = ±5 mA, VCE = 5 V % Rank GB IF = ±1 mA, VCE = 0.4 V Rank GB Rank GB IC(off) Off-state collector current Collector current ratio IC (ratio) VF = ± 0.7 V, VCE = 48 V IC (IF = -5 mA) / IC (IF = 5 mA) (Fig.1) % V Fig.1: Collector current ratio test circuit IC1 IF1 I (I = I , V = 5V) IC(ratio) = C2 F F2 CE IC1(IF = IF1, VCE = 5V) © 2019 Toshiba Electronic Devices & Storage Corporation VCE IC2 IF2 3 2019-05-20 TLP290(SE Isolation Characteristics (Unless otherwise specified, Ta = 25°C) Characteristic Symbol Total capacitance (input to output) CS Isolation resistance RS BVS Isolation voltage Test Condition VS = 0V, f = 1 MHz Min Typ. Max Unit - 0.8 - pF 14 10 - Ω 3750 - - Vrms Min Typ. Max Unit 12 VS = 500 V, R.H.≤ 60 % 1×10 AC, 60 s Switching Characteristics (Unless otherwise specified, Ta = 25°C) Characteristic Symbol Test Condition Rise time tr - 2 - Fall time tf - 3 - - 3 - - 3 - - 0.5 - - 30 - - 50 - Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = ±16 mA (Fig.2) μs μs (Fig. 2): Switching time test circuit IF RL VCC IF VCE VCE ton © 2019 Toshiba Electronic Devices & Storage Corporation 4 tS VCC 4.5V 0.5V toff 2019-05-20 TLP290(SE P C - Ta Input forward current I F (mA) Collector power dissipation PC (mW) I F - Ta This curve shows the maximum limit to the input forward current. Ta (˚C) Ambient temperature Ambient temperature Ta (˚C) IF-VF IFP-DR (mA) Pules width ≤100μs Ta=25˚C Input forward current IF Input forward current (pulsed) IFP (mA) 10000 1000 100 This curve shows the maximum limit to the input forward current (pulsed). 10 10-3 10-1 10-2 Input forward voltage VF (V) IFP – VFP Input forward current (pulsed) IFP (mA) Input forward current temperature coefficient ΔVF /ΔTa (mV/°C) ∆ V F / ∆ Ta - I F IF 110˚C 85˚C 50˚C 25˚C 0˚C -25˚C -55˚C 100 Duty cycle ratio DR Input forward current This curve shows the maximum limit to the collector power dissipation. (mA) Pulse width ≤10μs Repetitive frequency=100Hz Ta=25°C Input forward voltage (pulsed) VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-05-20 TLP290(SE IC-VCE PC(max) Ta=25˚C Ta=25˚C Collector current IC (mA) Collector current IC (mA) IC-VCE 50 mA 30 mA 20 mA 15 mA 10 mA IF = 5mA 50 mA 20 mA 30 mA 15 mA 10 mA 5 mA IF = 2 mA Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC-IF IC/IF -IF VCE=10V Collector current IC (mA) Current transfer ratio IC / IF (%) Ta=25˚C VCE=10V VCE=5V VCE=5V VCE=0.4V VCE=0.4V Input forward voltage IF (mA) Input forward current V C E ( s a t ) - Ta VCE=48V 24V 10V 5V VCE(sat) (V) Collector-emitter saturation voltage I C E O - Ta Dark current ICEO (μA) (mA) IF IF=8mA, IC=2.4mA IF=1mA, IC=0.2mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-05-20 TLP290(SE I C - Ta 100 Collector current IC (mA) 25 mA 10 mA 5 mA 10 1 mA 1 IF=0.5mA VCE=5V 0.1 -60 -40 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) S wi t c h i n g t i m e - R L S wi t c h i n g t i m e - Ta Ta=25˚C IF=16mA IF=16mA VCC=5V VCC=5V RL=1.9kΩ toff Switching time (μs) Switching time (μs) toff ts ts Ton ton Ambient temperature Ta (°C) Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-05-20 TLP290(SE Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ∙Temperature profile example of lead (Pb) solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) ∙Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) ･Please preheat it at 150°C between 60 and 120 seconds. ･Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-05-20 TLP290(SE 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-05-20 TLP290(SE RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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