TLP290-4GBE

TLP290-4 Photocouplers Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers (PLCs) • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to an infrared LED. The TLP290-4 Photocoupler is housed in the very small and thin SO16 package. Since the TLP290-4 is guaranteed over a wide operating temperature range (Ta = -55 to 110 ), it is suitable for high-density surface mount applications such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 2500 Vrms (min) (4) Operating temperature: -55 to 110  (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1, 3, 5, 7: Cathode, anode 2, 4, 6, 8: Anode, cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector 11-11F1 Start of commercial production ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 2012-03 2019-11-29 Rev.7.0 TLP290-4 5. Principle of Operation 5.1. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.1 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol R.M.S. forward current Input forward current derating Note IF(RMS) (Ta ≥ 50 ) Input forward current (pulsed) ∆IF/∆Ta IFP Input power dissipation (Note 1) Rating Unit ±50 mA -0.67 mA/ ±1 A PD 70 mW ∆PD/∆Ta -0.93 mW/ Tj 125  Detector Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 Input power dissipation derating (1 circuit) (Ta ≥ 50 ) Junction temperature Collector current IC 50 mA Collector power dissipation PC 100 mW ∆PC/∆Ta -1.0 mW/ Collector power dissipation derating (1 circuit) (Ta ≥ 25 ) Junction temperature Common Operating temperature Storage temperature Lead soldering temperature 125  -55 to 110  Tstg -55 to 125 (10 s) Tsol 260 (AC, 60 s, R.H. ≤ 60 %) BVS Total power dissipation (1 circuit) Isolation voltage Tj Topr PT (Note 2) 170 mW 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 100 µs, f = 100 Hz Note 2: This device is considered as a two-terminal device: All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-11-29 Rev.7.0 TLP290-4 7. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Note Test Condition Min Typ. Max Unit Input forward voltage VF IF = ±10 mA 1.1 1.20 1.4 V Input capacitance Ct V = 0 V, f = 1 MHz  30  pF Detector Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 80   V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7   IDARK VCE = 48 V  0.01 0.1 VCE = 48 V, Ta = 85   2 50 V = 0 V, f = 1 MHz  10  pF Dark Current Collector-emitter capacitance CCE µA 8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Current transfer ratio Symbol IC/IF Note Test Condition (Note 1) IF = ±5 mA, VCE = 5 V Collector-emitter saturation voltage OFF-state collector current Collector current ratio IC/IF(sat) VCE(sat) IC(off) IC(ratio) Typ. Max Unit % 50  400 100  400 IF = ±1 mA, VCE = 0.4 V  60  IF = ±1 mA, VCE = 0.4 V, Rank GB 30   IC = 2.4 mA, IF = ±8 mA   0.4 IC = 0.2 mA, IF = ±1 mA  0.2  IC = 0.2 mA, IF = ±1 mA, Rank GB   0.4   10 µA 0.33  3  IF = ±5 mA, VCE = 5 V, Rank GB Saturated current transfer ratio Min VF = ±0.7 V, VCE = 48 V See Fig. 8.1. IC(IF = -5 mA)/IC(IF = 5 mA) V Note 1: See Table 8.1 for current transfer ratio. Table 8.1 Current transfer ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 ) Rank Blank Test Condition IF = ±5 mA, VCE = 5 V GB Note: Current transfer ratio IC/IF Min Current transfer ratio IC/IF Max Marking of Classification Unit 50 400 Blank, GB % 100 400 GB Specify both the part number and a rank in this format when ordering. Example: TLP290-4(GB,E For safety standard certification, however, specify the part number alone. Example: TLP290-4(GB,E: TLP290-4 Fig. 8.1 Collector Current Ratio Test Circuit ©2015-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-29 Rev.7.0 TLP290-4 9. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % BVS (Note 1) AC, 60 s 2500 Isolation voltage Test Conditions Min Typ. Max Unit  0.8  pF 1012 1014  Ω   Vrms Note 1: This device is considered as a two-terminal device: All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together. 10. Switching Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Rise time Fall time Symbol tr tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Note Test Condition VCC = 10 V, IC = 2 mA, RL = 100 Ω See Figure 10.1 RL = 1.9 kΩ, VCC = 5 V, IF = 16 mA Min Typ. Max Unit  2  µs  3   3   3   2   25   60  Fig. 10.1 Switching Time Test Circuit and Waveform ©2015-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-29 Rev.7.0 TLP290-4 11. Characteristics Curves (Note) Fig. 11.1 IF - Ta Fig. 11.2 PC - Ta Fig. 11.3 IFP - DR Fig. 11.4 IF - VF Fig. 11.5 ∆VF/∆Ta - IF Fig. 11.6 IFP - VFP ©2015-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-29 Rev.7.0 TLP290-4 Fig. 11.7 IC - VCEO Fig. 11.8 IC - VCEO Fig. 11.9 IC - IF Fig. 11.10 IDARK - Ta Fig. 11.11 IC/IF - IF ©2015-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-29 Rev.7.0 TLP290-4 Note: Fig. 11.12 VCE(sat) - Ta Fig. 11.13 IC - Ta Fig. 11.14 Switching Time - RL Fig. 11.15 Switching Time - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-11-29 Rev.7.0 TLP290-4 12. Soldering and Storage 12.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 12.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-11-29 Rev.7.0 TLP290-4 13. Land Pattern Dimensions (for reference only) Unit: mm 14. Marking 15. Ordering Information When placing an order, please specify the part number, CTR rank, tape type and quantity as shown in the following example. Example) TLP290-4(GB-TP,E 2000 pcs Part number: TLP290-4 CTR rank: (GB Tape type: TP [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 2000): 2000 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2015-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-11-29 Rev.7.0 TLP290-4 Package Dimensions Unit: mm Weight: 0.19 g (typ.) Package Name(s) TOSHIBA: 11-11F1 ©2015-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-11-29 Rev.7.0 TLP290-4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ ©2015-2019 Toshiba Electronic Devices & Storage Corporation 11 2019-11-29 Rev.7.0