TLP291(GR,E)

TLP291 TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TLP291 Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291 consists of photo transistor, optically coupled to an infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler. Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.  Collector-Emitter Voltage : 80 V (min)  Current Transfer Ratio Rank GB : 50% (min) : 100% (min)  Isolation Voltage : 3750 Vrms (min)  Operation temperature : -55 to 110 ˚C TOSHIBA 11-3C1 Weight: 0.05 g (typ.)  UL-recognized : UL 1577, File No.E67349  cUL-recognized : CSA Component Acceptance Service No.5A File No.67349  VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1)  CQC-approved : GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option(V4). 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) TLP291 1 4 2 3 1:ANODE 2:CATHODE 3:EMITTER 4:COLLECTOR Construction Mechanical Rating Creepage distance: Pin Configuration Start of commercial production 2012-02 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-5-27 TLP291 Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C) TYPE Classification (Note1) Current Transfer Ratio (%) (IC / IF) IF = 5 mA, VCE = 5 V, Ta = 25°C Min Max Marking of Classification Blank 50 400 Blank, YE, Y+, GR, GB, G, G+,B Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 400 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B TLP291 Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP291 (GB,E For safety standard certification, however, specify the part number alone. (e.g.)TLP291 (GB,E: TLP291 © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-5-27 TLP291 Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C) CHARACTERISTIC Input forward current Input forward current derating (Ta≥90°C) LED RATING UNIT IF 50 mA ∆IF /ΔTa -1.5 mA /°C 1 A SYMBOL NOTE Input forward current (pulsed ) IFP Input reverse voltage VR 5 V Input power dissipation PD 100 mW ΔPD/ΔTa -3.0 mW/°C Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage Input power dissipation derating (Ta ≥ 90°C) Junction temperature (Note 2) 7 V IC 50 mA Collector power dissipation PC 150 mW ∆PC /ΔTa -1.5 mW /°C Tj 125 °C Operating temperature range Topr -55 to 110 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation PT 200 mW ∆PT /ΔTa -2.0 mW /°C 3750 Vrms DETECTOR VECO Collector current Collector power dissipation derating(Ta≥25°C) Junction temperature Total package power dissipation derating(Ta≥25°C) Isolation voltage BVS (Note3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2: Pulse width ≤ 100 μs, frequency 100 Hz Note3: AC, 60 s, R.H.≤60 %, Device considered a two terminal device: LED side pins shorted together and DETECTOR side pins shorted together. Electrical Characteristics (Unless otherwise specified, Ta = 25°C) DETECTOR LED CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT 1.1 1.25 1.4 V Input forward voltage VF IF = 10 mA Input reverse current IR VR = 5 V - - 5 μA Input capacitance CT V = 0 V, f = 1 MHz - 30 - pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 - - V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 - - V VCE = 48 V - 0.01 0.08 μA VCE = 48 V, Ta = 85 °C - 2 50 μA - 10 - pF Dark current ICEO Collector-emitter capacitance CCE © 2019 Toshiba Electronic Devices & Storage Corporation V = 0 V, f = 1 MHz 3 2019-5-27 TLP291 Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL Current transfer ratio Saturated current transfer ratio IC / IF IC / IF (sat) TEST CONDITION IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB OFF-state collector current IC (off) VF = 0.7 V, VCE = 48 V MIN TYP. MAX UNIT 50 - 400 100 - 400 - 60 - 30 - - - - 0.3 - 0.2 - - - 0.3 - - 10 μA MIN TYP. MAX UNIT - 0.8 - pF 1×1012 1014 - Ω 3750 - - Vrms MIN TYP. MAX UNIT - 4 - - 7 - - 7 - - 7 - - 2 - - 30 - - 60 - % % V Isolation Characteristics (Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL Total capacitance (input to output) CS Isolation resistance RS Isolation voltage BVS TEST CONDITION VS = 0 V, f = 1 MHz VS = 500 V, R.H.≤60 % AC , 60 s Switching Characteristics (Unless otherwise specified, Ta = 25°C) CHARACTERISTIC SYMBOL Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff TEST CONDITION VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) μs μs (Fig.1) Switching Time Test Circuit ton © 2019 Toshiba Electronic Devices & Storage Corporation 4 toff 2019-5-27 TLP291 I F - Ta P C - Ta 160 Collector power dissipation PC (mW) I F (mA) 100 80 Input forward current 60 40 (Note) This curve shows the maximum limit to the input forward current. 20 0 -20 0 20 40 60 80 100 140 120 100 80 60 40 (Note) This curve shows the maximum limit to the collector power dissipation. 20 0 120 -20 20 IFP-DR 500 300 100 (Note) This curve shows the maximum limit to the input forward current (pulsed). 10 10 110˚C 85˚C 50˚C 25˚C 0˚C -25˚C -55˚C 1 0.6 100 Duty cycle ratio DR 0.8 1 1.2 1.4 Input forward voltage ∆ V F / ∆ Ta - I F 1.6 VF 1.8 2 (V) IFP - VFP 1000 Input forward current (pulsed) IFP (mA) -3.2 -2.8 Input forward current derating ΔVF /ΔTa (mV/°C) 120 0.1 10-1 10-2 10-3 100 (mA) Ta=25˚C 30 80 100 Pules width ≤100μs 1000 50 60 IF-VF Input forward current IF Input forward current (pulsed) IFP (mA) 3000 40 Ambient temperature Ta (˚C) Ta (˚C) Ambient temperature 0 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0.1 1 Input forward current 10 IF 100 100 10 Pulse width ≤10μs Repeative frequency=100Hz Ta=25°C 1 0.6 (mA) 1 1.4 1.8 2.2 2.6 3 3.4 Input forward voltage (pulsed) VFP (V) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-5-27 TLP291 IC-VCE IC-VCE 30 50 Ta=25˚C Ta=25˚C 25 40 Collector current IC (mA) Collector current IC (mA) PC (max) 50 30 20 30 15 20 10 10 50 20 30 20 15 15 10 10 5 5 I F= 2 m A IF=5mA 0 0 0 2 4 6 8 0 10 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC-IF I C E O - Ta 1 10 100 Ta=25˚C Dark current ICEO (μA) Collector current IC (mA) 1 10 1 0.1 VCE=48V 24V 10V 5V 0.01 0.001 VCE=10V VCE=5V VCE=0.4V 0.0001 0.1 0.1 1 Input forward voltage 10 0 100 IF (mA) 20 40 60 80 100 120 Ambient temperature Ta (°C) IC/IF -IF 1000 Current transfer ratio IC / IF (%) VCE=10V VCE=5V VCE=0.4V 100 10 0.1 1 Input forward current 10 IF 100 (mA) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-5-27 TLP291 V C E ( s a t ) - Ta I C - Ta 100 25 Collector current IC (mA) 0.24 0.20 VCE(sat) (V) Collector-emitter saturation voltage 0.28 0.16 0.12 0.08 10 10 5 1 1 IF=0.5mA IF=8mA, IC=2.4mA 0.04 IF=1mA, IC=0.2mA VCE=5V 0.00 -60 -40 -20 0 20 40 60 80 0.1 -60 -40 -20 100 120 Ambient temperature Ta (°C) 20 40 60 80 100 120 Ambient temperature Ta (°C) S wi t c h i n g t i m e - R L 10000 0 S wi t c h i n g t i m e - Ta 1000 Ta=25˚C IF=16mA VCC=5V toff 100 toff ts Switching time (μs) Switching time (μs) 1000 ts 100 10 10 Ton 1 IF=16mA ton VCC=5V RL=1.9kΩ 1 0.1 1 10 -60 -40 -20 100 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Load resistance RL (kΩ) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-5-27 TLP291 Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ∙Temperature profile example of lead (Pb) solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) ∙Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) ∙ Please preheat it at 150°C between 60 and 120 seconds. ∙ Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-5-27 TLP291 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-5-27 TLP291 EN 60747-5-5 Option:(V4) Types : TLP291 Type designations for “option: (V4)”, which are tested under EN 60747 requirements. (e.g.): TLP291 (V4GB-TP,E V4 : EN 60747 option GB : CTR rank type TP : Standard tape & reel type E : [[G]]/RoHS COMPATIBLE (Note4 ) Note: Use TOSHIBA standard type number for safety standard application. (e.g.): TLP291(V4GB-TP,E  TLP291 Note4: Please contact your Toshiba sales representative for details on environmental information such as the product’s RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification for rated mains voltage ≤ 150Vrms for rated mains voltage ≤ 300Vrms I-IV I-III Climatic classification - 55 / 110 / 21 - 2 - VIORM 707 Vpk Input to output test voltage, Method A Vpr=1.6 × VIORM, type and sample test tp=10s, partial discharge