TLP291
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
Unit: mm
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
: 80 V (min)
Current Transfer Ratio
Rank GB
: 50% (min)
: 100% (min)
Isolation Voltage
: 3750 Vrms (min)
Operation temperature
: -55 to 110 ˚C
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
UL recognized
: UL1577, File No. E67349
cUL approved
: CSA Component Acceptance Service No.5A,
File No. 67349
SEMKO approved:
EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
BSI approved
Pin Configuration
: BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
TLP291
1
4
2
3
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Construction Mechanical Rating
Creepage distance:
5.0 mm (min)
Clearance:
5.0 mm (min)
Insulation thickness:
0.4 mm (min)
Start of commercial production
2012/02
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2014-09-22
TLP291
Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C)
TYPE
TLP291
Classification
(Note1)
Current Transfer Ratio (%)
(IC / IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
Marking of Classification
Blank
50
400
Blank, YE, Y+, GR, GB, G, G+,B
Rank Y
50
150
YE
Rank GR
100
300
GR
Rank GB
100
400
GB
Rank YH
75
150
Y+
Rank GRL
100
200
G
Rank GRH
150
300
G+
Rank BLL
200
400
B
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP291 (GB,E
For safety standard certification, however, specify the part number alone.
(e.g.)TLP291 (GB,E: TLP291
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2014-09-22
TLP291
Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
RATING
UNIT
IF
50
mA
∆IF /∆Ta
-1.5
mA /°C
1
A
SYMBOL
Input forward current
Input forward current derating (Ta≥90°C)
NOTE
IFP
Input reverse voltage
VR
5
V
Input power dissipation
PD
100
mW
∆PD/∆Ta
-3.0
mW/°C
Tj
125
°C
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
∆PC /∆Ta
-1.5
mW /°C
Tj
125
°C
Operating temperature range
Topr
-55 to 110
°C
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
200
mW
∆PT /∆Ta
-2.0
mW /°C
3750
Vrms
LED
Input forward current (pulsed )
Input power dissipation derating
(Ta ≥ 90°C)
DETECTOR
Junction temperature
Collector power dissipation derating(Ta≥25°C)
Junction temperature
Total package power dissipation derating(Ta≥25°C)
Isolation voltage
(Note 2)
BVS
(Note3)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
DETECTOR
LED
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
1.1
1.25
1.4
V
Input forward voltage
VF
IF = 10 mA
Input reverse current
IR
VR = 5 V
-
-
5
μA
Input capacitance
CT
V = 0 V, f = 1 MHz
-
30
-
pF
Collector-emitter breakdown voltage
V(BR) CEO
IC = 0.5 mA
80
-
-
V
Emitter-collector breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
-
-
V
VCE = 48 V
Dark current
ICEO
Collector-emitter capacitance
CCE
-
0.01
0.08
μA
VCE = 48 V, Ta = 85°C
-
2
50
μA
V = 0 V, f = 1 MHz
-
10
-
pF
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2014-09-22
TLP291
Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation voltage
SYMBOL
IC / IF
IC / IF (sat)
VCE (sat)
TEST CONDITION
MIN
TYP.
MAX
50
-
400
100
-
400
-
60
-
30
-
-
IC = 2.4 mA, IF = 8 mA
-
-
0.3
IC = 0.2 mA, IF = 1 mA
-
0.2
-
-
-
0.3
-
-
10
μA
MIN
TYP.
MAX
UNIT
-
0.8
-
pF
-
Ω
IF = 5 mA, VCE = 5 V
Rank GB
IF = 1 mA, VCE = 0.4 V
Rank GB
Rank GB
OFF-state collector current
IC (off)
VF = 0.7 V, VCE = 48 V
UNIT
%
%
V
Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Total capacitance (input to output)
Isolation resistance
SYMBOL
CS
RS
TEST CONDITION
VS = 0 V, f = 1 MHz
VS = 500 V, R.H.≤60%
1×10
AC , 1 minute
Isolation voltage
BVS
12
10
14
3750
-
-
AC , 1 second, in OIL
-
10000
-
DC , 1 minute, in OIL
-
10000
-
Vdc
MIN
TYP.
MAX
UNIT
-
4
-
-
7
-
-
7
-
-
7
-
-
2
-
-
30
-
-
60
-
Vrms
Switching Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
Rise time
tr
Fall time
tf
Turn-on time
ton
Turn-off time
toff
Turn-on time
ton
Storage time
ts
Turn-off time
toff
TEST CONDITION
VCC = 10 V, IC = 2 mA
RL = 100Ω
RL = 1.9 kΩ
VCC = 5 V, IF = 16 mA
(Fig.1)
μs
μs
(Fig.1) Switching Time Test Circuit
ton
4
toff
2014-09-22
TLP291
I F - Ta
P C - Ta
160
Input forward current
(mW)
60
40
(Note) This curve shows
20
the maximum limit to the
input forward current.
0
-20
0
20
40
60
80
Ambient temperature
Ta
100
120
140
PC
80
120
Collector power dissipation
I F (mA)
100
100
80
60
40
(Note) This curve shows the
maximum limit to the collector
20
power dissipation.
0
-20
0
20
300
100
(Note) This curve shows the
maximum limit to the input
forward current (pulsed).
Duty cycle ratio
10
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
1
0.6
100
DR
0.8
1
1.2
1.4
Input forward voltage
∆ V F / ∆ Ta - I F
1.6
1.8
VF
2
(V)
IFP - VFP
1000
(mA)
-3.2
IFP
-2.8
-2.4
Input forward current (pulsed)
Input forward current derating
ΔVF /ΔTa (mV/°C)
(˚C)
0.1
10-1
10-2
10-3
120
(mA)
IF
Input forward current
Input forward current (pulsed)
IFP (mA)
500
10
Ta
100
100
Pules width ≤100μs
Ta=25˚C
30
80
IF-VF
1000
50
60
Ambient temperature
(˚C)
IFP-DR
3000
40
-2
-1.6
-1.2
-0.8
-0.4
0.1
1
Input forward current
10
IF
100
100
10
Pulse width ≤10μs
Repeative frequency=100Hz
Ta=25°C
1
0.6
(mA)
1
1.4
1.8
2.2
Input forward voltage (pulsed)
2.6
3
VFP
3.4
(V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TLP291
IC-VCE
IC-VCE
30
50
Ta=25˚C
Ta=25˚C
25
(mA)
40
50
30
30
50
20
IC
20
15
20
Collector current
Collector current
IC
(mA)
PC (max)
10
10
30
20
15
15
10
10
5
5
I F= 2 m A
IF=5mA
0
0
0
2
4
6
8
Collector-emitter voltage
VCE
0
10
0.2
0.4
0.6
0.8
Collector-emitter voltage
(V)
IC-IF
VCE
1
(V)
I C E O - Ta
10
100
Ta=25˚C
ICEO (μA)
10
Dark current
Collector current
IC
(mA)
1
1
0.1
VCE=48V
24V
10V
5V
0.01
0.001
VCE=10V
VCE=5V
VCE=0.4V
0.0001
0.1
0.1
1
Input forward voltage
10
IF
0
100
(mA)
20
40
60
Ambient temperature
80
Ta
100
120
(°C)
IC/IF -IF
1000
VCE=10V
Current transfer ratio
IC / IF (%)
VCE=5V
VCE=0.4V
100
10
0.1
1
Input forward current
10
IF
100
(mA)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TLP291
V C E ( s a t ) - Ta
I C - Ta
100
25
Collector current IC (mA)
0.24
(V)
0.20
VCE(sat)
Collector-emitter saturation voltage
0.28
0.16
0.12
0.08
IF=8mA, IC=2.4mA
0.04
10
5
10
1
1
IF=0.5mA
IF=1mA, IC=0.2mA
VCE=5V
0.00
-60 -40 -20
0
20
40
60
80
Ambient temperature
Ta
(°C)
0.1
-60 -40 -20
100 120
Switching time - RL
10000
0
20
40
60
Ambient temperature
Ta
80 100 120
(°C)
S w i t c h i n g t i m e - Ta
1000
Ta=25˚C
IF=16mA
VCC=5V
toff
1000
100
toff
(μs)
ts
100
Switching time
Switching time
(μs)
ts
10
10
Ton
1
IF=16mA
ton
VCC=5V
RL=1.9kΩ
1
0.1
1
10
Load resistance
-60 -40 -20
100
RL (kΩ)
0
20
40
60
Ambient temperature
Ta
80
100 120
(°C)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
7
2014-09-22
TLP291
Soldering and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
·Temperature profile example of lead (Pb) solder
(°C)
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
Package surface temperature
240
210
160
140
less than 30s
60 to 120s
Time
(s)
·Temperature profile example of using lead (Pb)-free solder
(°C)
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
Package surface temperature
260
230
190
180
60 to 120s
30 to 50s
Time
(s)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
· Please preheat it at 150°C between 60 and 120 seconds.
· Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may
be heated at most once.
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TLP291
2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,
respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
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TLP291
EN 60747-5-5 Option:(V4)
Types
: TLP291
Type designations for “option: (V4)”, which are tested under EN 60747 requirements.
(e.g.): TLP291 (V4GB-TP,E
V4 : EN 60747 option
GB : CTR rank type
TP : Standard tape & reel type
E : [[G]]/RoHS COMPATIBLE (Note4 )
Note: Use TOSHIBA standard type number for safety standard application.
(e.g.): TLP291(V4GB-TP,E TLP291
Note4: Please contact your Toshiba sales representative for details on environmental information such
as the product’s RoHS compatibility.
RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and
electronics equipment.
EN 60747 Isolation Characteristics
Description
Symbol
Rating
Unit
Application classification
I-IV
I-III
for rated mains voltage ≤ 150Vrms
for rated mains voltage ≤ 300Vrms
Climatic classification
-
55 / 110 / 21
-
2
-
VIORM
707
Vpk
Input to output test voltage, Method A
Vpr=1.5 × VIORM, type and sample test
tp=10s, partial discharge
