TLP293(TPL,E

TLP293 Photocouplers Infrared LED & Photo Transistor TLP293 1. Applications • Switching Power Supplies • Programmable Logic Controllers (PLCs) • I/O Interface Boards 2. General TLP293 is a low input and high isolation type photocoupler that consists of a phototransistor optically coupled to an infrared LED in a SO4 package. Since TLP293 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (Ta = -55 to 125 ), it is suitable for high density surface mounting applications such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) (@IF = 0.5 mA, VCE = 5 V) GB Rank: 100 % (min) (@IF = 0.5 mA, VCE = 5 V) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 125  (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1: Anode 2: Cathode 3: Emitter 4: Collector 11-3C1 Start of commercial production ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 2013-09 2019-11-29 Rev.6.0 TLP293 5. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating Note IF (Ta ≥ 90 ) ∆IF/∆Ta Unit 50 mA -1.11 mA/ 1 A Input forward current (pulsed) IFP Input reverse voltage VR 5 V Input power dissipation PD 100 mW ∆PD/∆Ta -2.22 mW/ Tj 135  Detector Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Input power dissipation derating (Ta ≥ 90 ) Junction temperature (Note 1) Rating Collector current IC 50 mA Collector power dissipation PC 150 mW ∆PC/∆Ta -1.36 mW/ Collector power dissipation derating (Ta ≥ 25 ) Junction temperature Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage 135  -55 to 125  Tstg -55 to 125  (10 s) Tsol 260  PT 200 mW (Ta ≥ 25 ) ∆PT/∆Ta -1.82 mW/ AC, 60 s, R.H. ≤ 60 % BVS 3750 Vrms Total power dissipation Total power dissipation derating Tj Topr (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-11-29 Rev.6.0 TLP293 7. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Note Test Condition Min Typ. Max Unit Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Input reverse current IR VR = 5 V   5 µA Input capacitance Ct V = 0 V, f = 1 MHz  30  pF Detector Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 80   V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7   V Dark Current IDARK VCE = 48 V  0.01 0.08 µA VCE = 48 V, Ta = 85   2 50 Collector-emitter capacitance CCE V = 0 V, f = 1 MHz  10  pF 8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Current transfer ratio IC/IF Saturated current transfer ratio Note Min Typ. Max Unit 50  600 % IF = 5 mA, VCE = 5 V, GB Rank 100  600 IF = 0.5 mA, VCE = 5 V 50  600 IF = 0.5 mA, VCE = 5 V, GB Rank (Note 1) IF = 5 mA, VCE = 5 V IC/IF(sat) Collector-emitter saturation voltage VCE(sat) OFF-state collector current Test Condition IC(off) 100  600 IF = 1 mA, VCE = 0.4 V  60  IF = 1 mA, VCE = 0.4 V, GB Rank 30   IC = 2.4 mA, IF = 8 mA   0.3 IC = 0.2 mA, IF = 1 mA  0.2  IC = 0.2 mA, IF = 1 mA, GB Rank   0.3 VF = 0.7 V, VCE = 48 V   10 V µA Note 1: See Table 8.1 for current transfer ratio. Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 ) Rank Rank short code Blank  Y  GR  GB  BL  YH  Note Test Condition Current transfer ratio Current transfer ratio IC/IF IC/IF (min) (max) IF = 5 mA, VCE = 5 V Marking of classification 50 600 Blank, YE, GR, GB, BL, Y+, G, G+, B 50 150 YE 100 300 GR 100 600 GB, GR, BL 200 600 BL IF = 0.5 mA, VCE = 5 V 75 150 Y+ IF = 0.5 mA, VCE = 5 V IF = 5 mA, VCE = 5 V Unit % IF = 0.5 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 0.5 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 0.5 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 0.5 mA, VCE = 5 V GRL GL (Note 1) IF = 0.5 mA, VCE = 5 V 100 200 G GRH GH (Note 1) IF = 0.5 mA, VCE = 5 V 150 300 G+ BLL B (Note 1) IF = 0.5 mA, VCE = 5 V 200 400 B Note: Specify both the part number and a rank in this format when ordering. Example: TLP293(GB,E For safety standard certification, however, specify the part number alone. Example: TLP293(GB,E → TLP293 Note 1: A rank in the order name is sometimes omitted like above "Rank short code". ©2016-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-29 Rev.6.0 TLP293 9. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % (Note 1) AC, 60 s 3750 Isolation voltage BVS Note Test Condition Min Typ. Max Unit  0.8  pF 1012 1014  Ω   Vrms Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 10. Switching Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Rise time Fall time Symbol tr tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Note Test Condition VCC = 10 V, IC = 2 mA, RL = 100 Ω Min Typ. Max Unit  2  µs  3   3   3  See Fig. 10.1 RL = 1.9 kΩ, VCC = 5 V, IF = 16 mA  1.3   20   35  See Fig. 10.1 RL = 4.7 kΩ, VCC = 5 V, IF = 1.6 mA  10   9   47  Fig. 10.1 Switching Time Test Circuit and Waveform ©2016-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-29 Rev.6.0 TLP293 11. Characteristics Curves (Note) Fig. 11.1 IF - Ta Fig. 11.2 PC - Ta Fig. 11.3 IFP - DR Fig. 11.4 IF - VF Fig. 11.5 ∆VF/∆Ta - IF Fig. 11.6 IFP - VFP ©2016-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-29 Rev.6.0 TLP293 Fig. 11.7 IC - VCE Fig. 11.8 IC - VCE Fig. 11.9 IDARK - Ta Fig. 11.10 VCE(sat) - Ta Fig. 11.11 IC - IF Fig. 11.12 IC/IF - IF ©2016-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-29 Rev.6.0 TLP293 Fig. 11.13 IC - Ta Fig. 11.14 Switching Time - RL Fig. 11.15 Switching Time - Ta Fig. 11.16 Switching Time - RL Fig. 11.17 Switching Time - Ta Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-11-29 Rev.6.0 TLP293 12. Soldering and Storage 12.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 12.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 12.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-11-29 Rev.6.0 TLP293 13. Land Pattern Dimensions (for reference only) 14. Marking ©2016-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-11-29 Rev.6.0 TLP293 15. EN 60747-5-5 Option (V4) Specification • Part number: TLP293 (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (V4) of EN 60747. Example: TLP293(V4GR-TL,E V4: EN 60747 option GR: CTR rank TL: Tape type (L direction: TPL) E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP293(V4GR-TL,E → TLP293 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 15.1 EN 60747 Insulation Characteristics ©2016-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-11-29 Rev.6.0 TLP293 Table 15.1 Insulation Related Specifications (Note) Insulation Related Parameters Symbol TLP293 Minimum creepage distance Cr 5.0 mm Minimum clearance Cl 5.0 mm Minimum insulation thickness ti 0.4 mm CTI 175 Comparative tracking index Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 15.2 Marking on packing for EN 60747 Fig. 15.3 Marking Example (Note) Note: The above marking is applied to the photocouplers that have been qualified according to option (V4) of EN 60747. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 11 2019-11-29 Rev.6.0 TLP293 Fig. 15.4 Measurement Procedure ©2016-2019 Toshiba Electronic Devices & Storage Corporation 12 2019-11-29 Rev.6.0 TLP293 16. Ordering Information When placing an order, please specify the part number, CTR rank, tape type and quantity as shown in the following example. Example) TLP293(GR-TPL,E 5000 pcs Part number: TLP293 CTR rank: GR Tape type: TPL (L direction) [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 2500): 5000 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2016-2019 Toshiba Electronic Devices & Storage Corporation 13 2019-11-29 Rev.6.0 TLP293 Package Dimensions Unit: mm Weight: 0.05 g (typ.) Package Name(s) TOSHIBA: 11-3C1 ©2016-2019 Toshiba Electronic Devices & Storage Corporation 14 2019-11-29 Rev.6.0 TLP293 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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