TLP3100(F)

TLP3100 TOSHIBA Photocoupler Photorelay TLP3100 Measurement Equipment FA (Factory Automation) Power Line Control Unit: mm The Toshiba TLP3100 consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surfacemount assembly. The TLP3100 features high ON-state current and low ON-state resistance, hence the TLP3100 is suitable to control a power line. • 6-pin SOP (2.54SOP6): 2.1 mm high, 2.54 mm pitch • Normally opened (form A) device • Peak OFF-state voltage: 20 V (min) • Trigger LED current: 3 mA (max) • ON-state current: 2.5 A (max) (Ta=50°C) • ON-state resistance: 0.02 Ω (typ.), 0.05 Ω (max) • Capacitance between output terminals: 1000 pF (typ.) • OFF-state current: 10 nA (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11-7C1 Weight: 0.13 g (typ.) Pin Configuration (top view) 1 6 2 5 3 4 1: 2: 3: 4: 5: 6: Anode Cathode N.C. Drain D1 Source Drain D2 Schematic Start of commercial production 2008-04 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP3100 Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 25°C) LED Reverse voltage Diode power dissipation Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage On-state current Symbol Rating Unit IF 30 mA ΔIF/°C −0.3 mA/°C VR 5 V PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 20 V A connection 2.5 ION B connection C connection 2.5 A 5.0 A connection On-state Detector current B connection derating (Ta ≥ 50°C) C connection −33.3 ΔION/°C −33.3 mA/°C −66.7 Output power dissipation PO 364.5 mW ΔPO / °C −4.86 mW / °C Tj 125 °C Storage temperature Tstg −55 to 125 °C Operating temperature Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Output power dissipation derating (Ta ≥ 50°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions Characteristics Supply voltage Forward current Operating temperature Symbol Min Typ. Max Unit VDD ― ― 20 V IF 5 10 20 mA Topr -20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP3100 Circuit Connections 1 6 2 5 3 4 LOAD AC or DC 1 6 2 5 3 4 A connection LOAD DC 1 6 2 5 3 4 B connection LOAD DC C connection Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit 1.18 1.33 1.48 V Forward current VF IF = 10 mA Reverse current IR VR = 5 V ― ― 10 μA Capacitance between terminals CT VF = 0 V, f = 1 MHz ― 70 ― pF OFF-state current IOFF VOFF = 20 V ― ― 10 nA Capacitance between terminals COFF V = 0 V, f = 1 MHz ― 1000 ― pF Min Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED current IFT ION = 100 mA ― ― 3 mA Return LED current IFC IOFF = 10 μA 0.1 ― ― mA ION = 2.0 A, IF = 5 mA, t