TLP3114(F)

TLP3114 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3114 MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS Unit: mm The TOSHIBA TLP3114 Mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3114 consists of an infraredemitting diode optically coupled to a photo-MOS FET and housed in a 4pin package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measuring instruments. Features • 4 pin SOP (2.54SOP4) • 1-Form-A • Peak Off-State Voltage : 2.1 mm high, 2.54 mm pitch : 40 V (min) • Trigger LED Current : 4 mA (max) • On-State Current : 250 mA (max) • On-State Resistance : 3 Ω (max), 2 Ω (typ.) • Output Capacitance : 7 pF (max), 5 pF (typ.) JEDEC ― JEITA ― TOSHIBA 11−5H1 Weight: 0.1 g (typ.) • Isolation Voltage : 1500 Vrms (min) • UL-recognized : UL 1577, File No.E67349 • cUL-recognized :CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved :EN 60747-5-5 (Note 1) • Note 1: When a VDE approved type is needed, • please designate the Option(V4). Pin Configuration (top view) 1 4 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN Schematic 1 4 2 3 Start of commercial production 2001-03 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP3114 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL Forward Current Forward Current Derating (Ta ≥ 25°C) RATING UNIT IF 50 mA ΔIF/°C −0.5 mA/°C VR 5 V Diode Power Dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 40 V ION 250 mA ΔION/°C −2.5 mA/°C PO 188 mW ΔPO / °C −1.88 mW / °C Tj 125 °C Storage Temperature Range Tstg −40 to 125 °C Operating Temperature Range Topr −20 to 85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 1500 Vrms LED Reverse Voltage Diode Power Dissipation Derating (Ta ≥25°C) Junction Temperature DETECTOR Off-State Output Terminal Voltage On-State Current On-State Current Derating (Ta ≥ 25°C) Output Power Dissipation Output Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1): Device considered a two-terminal device : Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. CAUTION This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage VDD ― ― 32 V Forward Current IF 10 ― 30 mA On-State Current ION ― ― 250 mA Operating Temperature Topr 25 ― 60 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) CHARACTERISTIC LED TEST CONDITION MIN TYP. MAX UNIT 1.15 1.3 V VF IF = 10 mA 1.0 Reverse Current IR VR = 5 V ― ― 10 μA Capacitance between terminals CT VF = 0 V, f = 1 MHz ― 15 ― pF Forward Voltage DETECTOR SYMBOL Off-State Current IOFF VOFF = 30 V, Ta = 50 °C ― ― 1000 pA Capacitance between terminals COFF V = 0 V, f = 100 MHz, t < 1 s ― 5 7 pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP3114 Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Trigger LED Current IFT ION = 100 mA ― ― 4 mA Return LED Current IFC IOFF = 10 μA 0.2 0.75 ― mA On-State Resistance RON ION = 250 mA, IF = 5 mA, t < 1 s ― 2 3 Ω MIN TYP. MAX UNIT ― 0.8 ― pF 1014 ― Ω 1500 ― ― Vrms MIN TYP. MAX UNIT ― ― 500 ― ― 500 Isolation Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Capacitance Input to Output TEST CONDITION VS = 0 V, f = 1 MHz CS Isolation Resistance RS VS = 500 V, R.H. ≤ 60 % Isolation Voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Turn-on Time tON Turn-off Time tOFF TEST CONDITION RL = 200 Ω VDD = 10 V, IF = 10 mA (Note 2) μs Note 2 : SWITCHING TIME TEST CIRCUIT IF 1 4 RL VDD IF VOUT 2 VOUT 90% 3 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP3114 I F ─ Ta I ON ─ Ta 500 Allowable On-sate current ION (mA) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 400 300 200 100 0 -20 0 Ambient temperature Ta (°C) Ta = 25 °C I ON (mA) 5 3 On-sate current I F (mA) 100 120 Ta = 25 °C 10 1 0.5 0.3 0.1 0.6 0.8 1 1.2 1.4 Forward voltage VF 1.6 I F = 5 mA 200 100 0 -100 -200 -300 -1 1.8 -0.5 (V) 0 0.5 1 On-sate voltage VON (V) RON ─ Ta I FT ─ Ta 5 5 I ON = 250 mA I ON = 100 mA Trigger LED current I FT (mA) On-sate resistance RON (Ω) 80 I ON ─ VON 30 I F = 5 mA t < 1s 3 2 1 0 -20 60 300 50 4 40 Ambient temperature Ta (°C) I F ─ VF 100 Forward current 20 0 20 40 60 80 Ambient temperature Ta (°C) 4 3 2 1 0 -20 100 t < 1s 0 20 40 60 80 Ambient temperature Ta (°C) 100 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-17 TLP3114 tON,tOFF ─ I F tON,tOFF ─ Ta 300 1000 300 VDD = 10 V, RL = 200 Ω t OFF 100 30 t ON 10 3 1 10 (µs) VDD = 10 V, 250 Switching time tON,tOFF Switching time tON,tOFF (µs) Ta = 25 °C 200 Forward current I F = 10 mA t OFF 150 100 t ON 50 0 -20 100 RL = 200 Ω I F (mA) 0 20 40 60 I OFF ─ VOFF N o r m a l i z e d C OFF ─ VOFF 1 Ta = 25 °C Ta = 25 °C Output terminal capacitance COFF / COFF (0V) (pA) I OFF Off-state current 100 Ambient temperature Ta (°C) 15 10 5 0 80 10 20 30 Off-state output voltage VOFF 0.8 0.6 0.4 0.2 0 40 (V) 10 20 30 40 Off-state output voltage VOFF 50 (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP3114 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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