TLP3119(F)

TLP3119 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3119 Measurement Instruments Unit: mm The TOSHIBA TLP3119 mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3119 consists of an infraredemitting diode optically coupled to a photo-MOSFET and is housed in a 4pin package. Features • 4-pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch • 1-Form-A • Peak Off-State Voltage: 80 V (min) • Trigger LED Current: 3 mA (max) • On-State Current: 200 mA (max) • On-State Resistance: 8 Ω (max) • Output Capacitance: 11 pF (max) • Isolation Voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A • VDE-approved: EN 60747-5-5 (Note 1) File No.E67349 JEDEC ― JEITA ― TOSHIBA 11−5H1 Weight: 0.1 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (Top View) 1 4 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN Schematic 1 4 2 3 Start of commercial production 2004-10 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP3119 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT IF 50 mA ΔIF/°C -0.5 mA/°C Reverse Voltage VR 5 V Diode Power Dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 80 V ION 200 mA ΔION/°C -2.0 mA/°C PO 320 mW ΔPO / °C -3.2 mW / °C Tj 125 °C Storage Temperature Range Tstg -40 to 125 °C Operating Temperature Range Topr -20 to 85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 1500 Vrms Forward Current LED Forward Current Derating (Ta ≥ 25°C) Diode Power Dissipation Derating (Ta ≥25°C) Junction Temperature DETECTOR Off-State Output Terminal Voltage On-State Current On-State Current Derating (Ta ≥ 25°C) Output Power Dissipation Output Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage VDD ― ― 64 V Forward Current IF 5 ― 30 mA On-State Current ION ― ― 200 mA Operating Temperature Topr 25 ― 60 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP3119 Individual Electrical Characteristics (Ta = 25°C) DETECTOR LED CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance between terminals CT VF = 0 V, f = 1 MHz ― 15 ― pF Off-State Current IOFF VOFF = 80 V, Ta = 50 °C ― ― 1 nA Capacitance between terminals COFF V = 0 V, f = 100 MHz, t < 1 s ― 6.5 11 pF MIN TYP. MAX UNIT Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Trigger LED Current IFT ION = 200 mA ― ― 3 mA Return LED Current IFC IOFF = 10 μA 0.1 ― ― mA On-State Resistance RON ION = 200 mA, IF = 5 mA, t < 1 s ― 5 8 Ω MIN TYP. MAX UNIT ― 0.7 ― pF 5 × 1010 1014 ― Ω 1500 ― ― Vrms MIN TYP. MAX UNIT ― 0.13 0.5 ― 0.17 0.5 Isolation Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Capacitance Input to Output CS VS = 0 V, f = 1 MHz Isolation Resistance RS VS = 500 V, R.H. ≤ 60 % Isolation Voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Turn-on Time tON Turn-off Time tOFF TEST CONDITION RL = 200 Ω VDD = 10 V, IF = 5 mA (Note 2) ms Note 2 : Switching time test circuit IF 1 4 RL VDD IF VOUT 2 VOUT 90% 3 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP3119 I F ─ Ta I ON ─ Ta 500 Allowable On-sate current ION (mA) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 (mA) 3 1 0.5 0.3 0.8 1 1.2 1.4 Forward voltage VF 20 40 60 80 100 Ambient temperature Ta (°C) -100 -200 1.5 80 0.5 1 100 Ambient temperature Ta (°C) I FT ─ Ta ION =200mA t < 1s (mA) 60 0 On-sate voltage VON (V) 5 40 -0.5 (V) 10 20 Ta = 25 ℃ IF = 5mA -1 ION =200mA IF=5mA, t