TLP3123(F)

TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA (Factory Automation) Unit: mm The TOSHIBA TLP3123 consists of an infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package. The TLP3123 is a bi-directional switch, which can replace mechanical relays in many applications. And its high on-state current maximum rating and low on-state resistance is suitable to control a power line. Features • 4 pin SOP (2.54SOP4) • 1-Form-A • Peak off-state voltage : 2.1 mm high, 2.54 mm pitch : 40 V (min) • Trigger LED current : 3 mA (max) • On-state current : 1 A (max) • On-state resistance : 0.1 Ω (typ.) • Capacitance between output terminals : 300 pF (typ.) • Off-state current : 1 nA (max) • Isolation voltage : 1500 Vrms (min) • UL-recognized : UL 1577, File No.E67349 • cUL-recognized : CSA Component Acceptance Service No.5A • VDE-approved : EN 60747-5-5 (Note 1) JEDEC ― JEITA ― TOSHIBA 11−5H1 Weight: 0.1 g (typ.) File No.E67349 Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin configuration (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Drain 4 : Drain Schematic 1 4 2 3 Start of commercial production 2012-06 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP3123 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 30 mA ΔIF/°C -0.3 mA/°C Reverse voltage VR 5 V Diode power dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 40 V ION 1 A ΔION/°C -13.3 mA/°C IONP 2 A Forward current LED Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥25°C) Junction temperature Off-state output terminal voltage Detector On-state current On-state current derating (Ta ≥ 50°C) Pulse on-state current (t = 100 ms) Outpot power dissipation PO 130 mW ΔPO / °C -1.74 mW / °C Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Output power dissipation derating (Ta ≥ 50°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device. LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Symbol Min Typ. Max Unit Supply voltage Characteristic VDD ― ― 32 V Forward current IF 5 10 20 mA Topr 25 ― 60 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit 1.18 1.33 1.48 V VR = 5 V ― ― 10 μA VF = 0 V, f = 1 MHz ― 70 ― pF Forward voltage VF IF = 10 mA Reverse current IR Capacitance between terminals CT Off-state current IOFF VOFF = 30 V ― ― 1 nA Capacitance between terminals COFF V = 0 V, f = 1 MHz ― 300 ― pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP3123 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 100 mA ― 1 3 mA Return LED current IFC IOFF = 100 μA 0.1 0.8 ― mA On-state resistance RON ION = 1 A, IF = 5 mA ― 0.1 0.13 Ω Min Typ. Max Unit ― 0.8 ― pF 1014 ― Ω 1500 ― ― Vrms Min Typ. Max Unit ― 1.2 3 ― 0.2 0.5 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Isolation voltage BVS Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % 5× AC, 60 s 1010 Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5mA (Note 2) ms Note 2: switching time test circuit IF 1 4 RL VDD IF VOUT 2 VOUT 90% 3 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP3123 I F ─ Ta I ON (A) 30 20 10 0 -20 0 20 40 I ON ─ Ta 1.2 Allowable on-state current I F (mA) 40 Allowable forward current 50 60 80 100 1 0.8 0.6 0.4 0.2 0 -20 120 0 20 Ambient temperature Ta (°C) I ON (A) On-state current Forward current I F (mA) 10 5 3 1 1.1 1.2 1.3 Forward voltage 1.4 VF 1.5 0 -0.5 -1 0.05 0.1 0.15 80 100 I FT (mA) I ON = 100 mA t