TLP3125(F)

TLP3125 TOSHIBA Photocoupler PHOTORELAY TLP3125 Replacement for Mechanical-Relay Measurement Instrumentation Unit: mm The TOSHIBA TLP3125 consists of an infrared-emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. Features • 8-pin SOP (2.54SOP8): 2.1-mm high, 2.54-mm pitch • 1-Form-A • Peak off-state voltage: 400 V (min) • Trigger LED current: 3 mA (max) • On-state current: 200 mA (max) • On-state resistance: 4 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 JEDEC ― JEITA ― TOSHIBA 11−10H1 Weight: 0.2 g (typ.) Pin Configuration (top view) 1 8 2 7 3 6 4 5 1 2 3 4 5 6 7 8 : NC : Anode : Cathode : NC : Drain D1 : Source : Source : Drain D2 Schematic 2 8 7 6 3 5 Start of commercial production 2003-06 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP3125 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF/°C -0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 400 V ION 200 mA ΔION/°C -2 mA/°C Po 160 mW ΔPo / °C -1.6 mW / °C Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Forward current LED Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage Detector On-state current On-state current derating (Ta ≥ 25°C) Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device. LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VDD ― ― 320 V Forward current IF 5 7.5 25 mA Topr −20 ― 65 °C Operating temperature Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Detector Min Typ. Max Unit Forward voltage Symbol VF IF = 10 mA Test Condition 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 2 μA Capacitance between terminals CT VF = 0 V, f = 1 MHz ― 30 ― pF Off-state current IOFF VOFF = 400 V, Ta = 60 °C ― 60 100 nA Capacitance between terminals COFF V = 0 V, f = 1 MHz ― 410 500 pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP3125 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT ION = 200 mA ― 1 3 mA Return LED current IFC IOFF = 100 μA 0.1 ― ― mA On-state resistance RON ION = 200 mA, IF = 5 mA ― 3.4 4 Ω Min Typ. Max Unit ― 0.8 ― pF 1014 ― Ω 1500 ― ― Vrms Min Typ. Max Unit ― 0.6 2 ― 0.2 1 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Isolation voltage BVS Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % 5× AC, 60 s 1010 Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5mA (Note 2) ms Note 2 : switching time test circuit IF 2 8 RL VDD IF VOUT 3 VOUT 90% 5 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 tOFF 2019-06-17 TLP3125 I F ─ Ta I ON (mA) 60 40 20 0 -20 0 20 40 I ON ─ Ta 300 Allowable on-state current I F (mA) 80 Allowable forward current 100 80 60 100 250 200 150 100 50 0 -20 120 0 Ambient temperature Ta (°C) 50 200 I ON (mA) 5 3 On-state current Forward current I F (mA) 10 1 0.5 0.3 1 1.2 Forward voltage -100 -200 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 On-state voltage VON (V) RON ─ Ta I FT ─ Ta 5 ION = 200 mA IF = 5 mA t