TLP3230

TLP3230

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP3230 - LOGIC IC TESTERS / MEMORY TESTERS - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP3230 数据手册
TLP3230 TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3230 MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS 4.2 φ1.4 Unit: mm ③ ② The TOSHIBA TLP3230 is a super small-outline photorelay, suitable for surface-mount assembly. The TLP3230 consists of a GaAs infrared-emitting diode optically coupled to a photo-MOS FET and housed in a 4-pin package. Its characteristics also include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measuring instruments. ④ ① 3.5 1.7 1.8 0.15 0.2 3.8 0.2 1.27 2.04 0.3 0.46±0.2 Features • • • • • • • • 4 pin SSOP (SSOP4) 1-Form-A Peak Off-State Voltage Trigger LED Current On-State Current On-State Resistance Output Capacitance Isolation Voltage : 20 V (MIN.) : 4 mA (MAX.) : 160 mA (MAX.) : 8Ω(MAX.), 5Ω(TYP.) : 2.5 pF (MAX.), 1.0 pF (TYP.) : 1500 Vrms (MIN.) JEDEC JEITA TOSHIBA Weight: 0.03 g : 1.8 mm high, 1.27 mm pitch 11-2A1 Pin Configuration (top view) 1 4 2 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 3 1 2007-10-01 TLP3230 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC Forward Current LED Forward Current Derating (Ta > 25°C) = Reverse Voltage Junction Temperature DETECTOR Off-State Output Terminal Voltage On-State Current On-State Current Derating (Ta > 25°C) = Junction Temperature SYMBOL IF ΔIF/°C VR Tj VOFF ION ΔION/°C Tj Tstg Topr Tsol BVS RATING 50 −0.5 5 125 20 160 −1.6 125 −40~125 −20~85 260 1500 UNIT mA mA/°C V °C V mA mA/°C °C °C °C °C Vrms Storage Temperature Range Operating Temperature Range Lead Soldering Temperature (10 s) Isolation Voltage (AC, 1 minute, R.H. < 60%) (NOTE1) = Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (NOTE 1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. This device is applying super small package which is free for Moisture-Proof packing. However, the application of this device is premised on use under controlled environmental condition like as measuring instrument. It is necessary to take precautions of storage condition and operating environmental condition. Recommended Operating Conditions CHARACTERISTIC Supply Voltage Forward Current On-State Current Operating Temperature SYMBOL VDD IF ION Topr MIN. ⎯ 10 ⎯ 25 TYP. ⎯ ⎯ ⎯ ⎯ MAX. 20 30 160 60 UNIT V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Forward Voltage LED Reverse Current Capacitance DETECTOR Off-State Current Capacitance SYMBOL VF IR CT IOFF COFF TEST CONDITION IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 20 V, Ta = 50°C V = 0, f = 100 MHz, t < 1 s MIN. 1.0 ⎯ ⎯ ⎯ ⎯ TYP. 1.15 ⎯ 15 ⎯ 1.0 MAX. 1.3 10 ⎯ 1000 2.5 UNIT V μA pF pA pF 2 2007-10-01 TLP3230 Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Trigger LED Current Return LED Current On-State Resistance SYMBOL IFT IFC RON TEST CONDITION ION = 100 mA IOFF = 10 μA ION = 160 mA, IF = 5 mA, t < 1 s MIN. ⎯ 0.2 ⎯ TYP. ⎯ 0.75 5 MAX. 4 ⎯ 8 UNIT mA mA Ω Isolation Characteristics (Ta = 25°C) CHARACTERISTIC Capacitance Input to Output Isolation Resistance SYMBOL CS RS TEST CONDITION VS = 0 V, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 minute Isolation Voltage BVS AC, 1 second (in oil) DC, 1 minute (in oil) MIN. ⎯ 5 × 10 10 TYP. 0.3 10 14 MAX. ⎯ ⎯ ⎯ ⎯ ⎯ UNIT pF Ω Vrms Vdc 1500 ⎯ ⎯ ⎯ 3000 3000 Switching Characteristics (Ta = 25°C) CHARACTERISTIC Turn-on Time Turn-off Time SYMBOL tON tOFF TEST CONDITION RL = 200 Ω VDD = 10 V, IF = 5 mA (NOTE 4) MIN. ⎯ ⎯ TYP. 60 120 MAX. 500 500 UNIT μs (NOTE 4) : SWITCHING TIME TEST CIRCUIT IF VDD IF VOUT 2 3 10% tON tOFF VOUT 90% 1 4 RL 3 2007-10-01 TLP3230 I F ─ Ta 100 I ON ─ Ta 280 (mA) (mA) 80 240 200 160 120 80 40 0 -20 Allowable forward current 40 20 0 -20 0 20 40 60 80 100 120 Allowable On-sate current 60 ION IF 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) I F ─ VF 100 50 Ta = 25 °C I ON ─ VON 200 150 Ta = 25 °C I F = 5 mA (mA) (mA) I ON On-sate current 0.8 1 1.2 1.4 1.6 1.8 30 10 5 3 1 0.5 0.3 0.1 0.6 100 50 0 -50 -100 -150 -200 -1 -0.5 0 0.5 1 Forward current IF Forward voltage VF (V) On-sate voltage VON (V) RON ─ Ta 10 I ON = 160 mA I FT ─ Ta 5 I ON = 100 mA (mA) (Ω) 8 I F = 5 mA t < 1s 4 t < 1s RON 6 I FT Trigger LED current 0 20 40 60 80 100 3 On-sate resistance 4 2 2 1 0 -20 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 4 2007-10-01 TLP3230 tON,tOFF ─ I F 1000 Ta = 25 °C tON,tOFF ─ Ta 250 V DD = 10 V, RL = 200 Ω (µs) (µs) 300 100 V DD = 10 V, RL = 200 Ω t OFF 200 I F = 10 mA tON,tOFF tON,tOFF 150 t OFF 30 10 Switching time Switching time 100 t ON 3 1 1 t ON 50 3 10 30 100 0 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (°C) I OFF ─ VOFF 15 Ta = 25 °C C OFF ─ VOFF 1 Ta = 25 °C (pA) I OFF 10 Output terminal capacitance COFF / COFF (0V) 0.8 0.6 Off-state current 0.4 5 0.2 0 5 10 15 20 0 10 20 30 Off-state output voltage VOFF (V) Off-state output voltage VOFF (V) 5 2007-10-01 TLP3230 OUTLINE DRAWING 4.2 φ1.4 Unit:mm Tolerance:±0.1 ② ③ ④ ① 3.5 1.7 1.8 0.15 0.2 3.8 0.2 1.27 2.04 0.3 0.46±0.2 ① ② ③ ④ : ANODE : CATHODE : DRAIN : DRAIN 6 2007-10-01 TLP3230 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01
TLP3230
物料型号: - 型号:TLP3230

器件简介: - TLP3230是东芝公司生产的一款超小型表面贴装光继电器,由一个GaAs红外发光二极管与一个光MOS FET组成,并封装在一个4引脚的SSOP(SSOP4)封装中。

引脚分配: - 1:阳极(ANODE) - 2:阴极(CATHODE) - 3:漏极(DRAIN) - 4:漏极(DRAIN)

参数特性: - 隔离电压:1500Vrms(最小值) - 关断状态下的输出端电压:20V(最小值) - 导通状态下的电流:160mA(最大值) - 导通状态下的电阻:8Ω(最大值),典型值为5Ω - 输出电容:2.5pF(最大值),典型值为1.0pF

功能详解: - TLP3230具有低关断状态下的电流和低输出引脚电容,适用于高频测量仪器。

应用信息: - 该光继电器适用于测量仪器、逻辑IC测试器、存储器测试器、板级测试器/扫描器等。

封装信息: - 封装类型:4引脚SSOP(SSOP4)1-Form-A - 封装高度:1.8mm - 引脚间距:1.27mm
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